SLD326YT SONY | Alldatasheet

Document overview

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Technical content

Features

  • High-optical power output Recommended optical power output: PO = 4.0W
  • High-optical power output density: 4W/400µm (Emitting line width)

Applications

  • Solid state laser excitation
  • Medical use
  • Material processing
  • Measurement Structure AlGaAs quantum well structure laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 4.0W, Tth = 25°C Absolute Maximum Ratings (Tth = 25°C)
  • Optical power output P O 4.4 W
  • Reverse voltage V R LD 2 V PD 15 V
  • Operating temperature (Tth) Topr –10 to +30 °C
  • Storage temperature Tstg –40 to +85 °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. M-288 TE Cooler Case LD PDTH 13 4 5 6 7 8 9 1 0 Equivalent Circuit Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. No. Function TE cooler (negative) Case Laser diode (anode) Thermistor Thermistor Laser diode (cathode) Photo diode (anode) Photo diode (cathode) TE cooler (positive) Pin Configuration (Top View)

– 2 – SLD326YT Electrical and Optical Characteristics (Tth = Thermistor temperature, Tth = 25°C) Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 10W. However the optical power density of the laser beam at the diode chip reaches 1.5MW/cm 2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Item Symbol Conditions Min. Typ. Max. Unit Ith Iop Vop lP q// ∆X, ∆Y ∆f^ ∆f// hD Imon Rth Threshold current Operating current Operating voltage Wavelength* Radiation angle Positional accuracy Differential efficiency Monitor current Thermistor resistance P O = 4.0W PO = 4.0W PO = 4.0W PO = 4.0W PO = 4.0W PO = 4.0W PO = 4.0W VR = 10V Tth = 25°C 4.0 790 0.5 0.2 1.0 5.5 2.4 0.85 1.5 2.0 8.0 2.8 840 ±100 1.5 4.0 A A V nm degree degree µm degree degree W/A mA kΩ Perpendicular Parallel Position Angle *Wavelength Selection Type SLD326YT-1 SLD326YT-2 SLD326YT-3 Wavelength (nm) 795 ± 5 810 ± 10 830 ± 10 Type* SLD326YT-21 SLD326YT-24 SLD326YT-25 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3 Safety goggles for protection from laser beam IR fluorescent plate O ptical m aterial LensLaser diode O ptical board O ptical pow er output control device Tem perature control device

– 3 – SLD326YT Example of Representative Characteristics O ptical pow er output vs. Forw ard current characteristics Tth = 25°C IF–Forw ard current [A] 0 1.5 3 4.5 6 7.5 P O–Optical power output [W Far field pattern Angle [degree] –40 –20 0 20 40 1.0 0.8 0.6 0.4 0.2 Relative radiant intensity Tth = 25°C PO = 4.0W θ// O scillation w avelength W avelength [nm ] 792 796 800 804 808 1.0 0.8 0.6 0.4 0.2 Relative radiant intensity Tth = 25°C PO = 4.0W Therm istor characteristics Tth–Therm istor tem perature [°C ] –10 0 10 40 60 Rth–Therm istor resistance [kΩ] 20 30 50 70 TE cooler characteristics Q–Absorbed heat [W ] 30 ΔT–Tem perature difference [°C ] 0 20 40 60 80 V T–Pin voltage [V] Tc = 25°C 1A 2A 3A ΔTvsV T = 4A ΔTvsQ T = 4A TE cooler characteristics Q–Absorbed heat [W ] 30 ΔT–Tem perature difference [°C ] 0 20 40 60 80 V T–Pin voltage [V] Tc = 33°C 1A 2A 3A ΔTvsV T = 4A ΔTvsQ T = 4A ΔT Tth Tc : Tc – Tth : Therm istor tem perature : C ase tem perature ΔT Tth Tc : Tc – Tth : Therm istor tem perature : C ase tem perature

– 4 – SLD326YT Package Outline Unit: mm PAC KAG E W EIG H T SO N Y C O D E EIAJ C O D E JED EC C O D E M -288 150g 4 – φ4.04 – 0.03 + 0.08 19.05 ± 0.15 4 – R1.0 4 – R1.0 φ5.0 W indow G lass 38.60 ± 0.15 31.75 ± 0.50 12.8 9 – φ1.0 2.54 44.45 ± 0.50 LD C hip 31.75 ± 0.50 0.9 M AX 17.0 R eference Plane 19.30 ± 0.15 3.0 14.9 ± 0.3 17.8 ± 0.3 1.0 26.4 3.6 M -288 Sony Corporation