SLD322V SONY | Alldatasheet

Document overview

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Technical content

Features

  • High power Recommended optical power output: Po = 0.5W
  • Low operating current: Iop = 0.75A (Po = 0.5W)

Applications

  • Solid state laser excitation
  • Medical use
  • Material processes
  • Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings(Tc = 25°C)
  • Optical power output Po 0.55 W
  • Reverse voltage V R LD 2 V PD 15 V
  • Operating temperature (Tc) Topr –10 to +30 °C
  • Storage temperature Tstg –40 to +85 °C Pin Configuration – 1 – E93205A81-PS Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. SLD322V Bottom View 1. LD cathode 2. PD anode 3. COMMON

– 2 – SLD322V Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C) Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm 2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely.

1 Wavelength Selection Classification

Wavelength (nm) 795 ± 5 810 ± 10 830 ± 10 Type SLD322V-21 SLD322V-24 SLD322V-25 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3 APC ATC Safety goggles for protection from laser beam IR fluorescent plate O ptical m aterial O ptical pow er output control device tem perature control device LensLaser diode O ptical boad Item Symbol Conditions Min. Typ. Max. Unit Ith Iop Vop lp Imon q// ∆X, ∆Y ∆f^ h D Threshold current Operating current Operating voltage Wavelength* Monitor current Radiation angle (F. W. H. M.*) Positional accuracy Differential efficiency PO = 0.5W PO = 0.5W PO = 0.5W PO = 0.5W VR = 10V PO = 0.5W PO = 0.5W PO = 0.5W 790 0.15 0.5 0.18 0.75 2.1 0.8 0.9 0.3 1.2 3.0 840 3.0 ±50 A A V nm mA degree degree µm degree W/A Perpendicular Parallel Position Angle * F. W. H. M. : Full Width at Half Maximum

– 3 – SLD322V Example of Representative Characteristics O ptical pow er output vs. Forw ard current characteristics IF – Forw ard current [m A] 0 200 400 600 800 1000 200 400 600 800 1000 Po – O ptical pow er output [m W ] TC = –10°C TC = 0°C TC = 25°C TC = 30°C O ptical pow er output vs. M onitor current characteristics Im on – M onitor current [m A] 0 0.5 1.00 250 500 Po – O ptical pow er output [m W ] TC = –10°C TC = 0°C TC = 25°C TC = 30°C Threshold current vs. Tem perature characteristics Tc – C ase tem perature [°C ] –10 0 10 20 30100 500 1000 Ith – Threshold current [m A] Tem perature dependence of far field pattern (Parallel to junction) Angle [degree] –90 –60 –30 0 30 60 90 R adiation intensity (optional scale) PO = 500m W TC = –5°C TC = 10°C TC = 25°C Pow er dependence of far field pattern (Parallel to junction) Angle [degree] –90 –60 –30 0 30 60 90 R adiation intensity (optional scale) TC = 25°C PO = 500m W PO = 400m W PO = 300m W PO = 200m W PO = 100m W Pow er dependence of far field pattern (Perpendicular to junction) Angle [degree] –90 –60 –30 0 30 60 90 R adiation intensity (optional scale) TC = 25°C PO = 500m W PO = 400m W PO = 300m W PO = 200m W PO = 100m W

– 4 – SLD322V Tem perature dependence of far field pattern (Perpendicular to junction) Angle [degree] –90 –60 –30 0 30 60 90 R adiation intensity (optional scale) PO = 500m W TC = 25°C TC = 10°C TC = –5°C 790 800 820 810 λp – W avelength [nm ] D ependence of w avelength Tc – C ase tem perature [°C ] –10 0 10 20 30 Po = 500m W 0.5 1.0 ηD – D ifferential efficiency [m W /m A] D ifferential efficiency vs. Tem perature characteristics Tc – C ase tem perature [°C ] –10 0 10 20 30

– 5 – SLD322V W avelength [nm ] 796 0.2 0.4 0.6 0.8 1.0 804802800798 R elative radiant intensity Tc = 25°C Po = 0.2W W avelength [nm ] 796 0.2 0.4 0.6 0.8 1.0 804802800798 R elative radiant intensity Tc = 25°C Po = 0.4W W avelength [nm ] 796 0.2 0.4 0.6 0.8 1.0 804802800798 R elative radiant intensity Tc = 25°C Po = 0.3W W avelength [nm ] 796 0.2 0.4 0.6 0.8 1.0 804802800798 R elative radiant intensity Tc = 25°C Po = 0.5W Power dependence of spectrum

– 6 – SLD322V W avelength [nm ] 790 0.2 0.4 0.6 0.8 1.0 815810805800785 795 R elative radiant intensity Tc = –10°C W avelength [nm ] 790 0.2 0.4 0.6 0.8 1.0 815810805800785 795 R elative radiant intensity Tc = 25°C W avelength [nm ] 790 0.2 0.4 0.6 0.8 1.0 815810805800785 795 R elative radiant intensity Tc = 30°C W avelength [nm ] 790 0.2 0.4 0.6 0.8 1.0 815810805800785 795 R elative radiant intensity Tc = 0°C Temperature dependence of spectrum(Po = 0.5W)

– 7 – SLD322V Package Outline Unit: mm M -248 (LO -11) R eference Slot 1.0 0.4 Photo D iode W indow G lass R eference Plane LD C hip φ9.0 – 0.015 φ7.7 M AX φ6.9 M AX φ3.5 0.6 M AX ∗2.45 3.4 M AX 1.5 7.0 M AX 3 – φ0.45 PC D φ2.54 ∗O ptical D istance = 2.55 ± 0.05 SO N Y C O D E EIAJ C O D E JED EC C O D E M -248 PAC KAG E W EIG H T 1.2g