SLD302V ROITHNER | Alldatasheet

Document overview

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Technical content

Features

  • High power Recommended power output Po = 180mW
  • Low operating current

Applications

  • Solid state laser excitation
  • Medical use Structure GaAlAs double-hetero-type laser diode Operating Lifetime MTTF 10,000H (effective value) at Po = 180mW, Tc = 25°C Absolute Maximum Ratings(Tc = 25°C)
  • Optical power output Po 200 mW
  • Reverse voltage V R LD 2 V PD 15 V
  • Operating temperature Topr –10 to +50 °C
  • Storage temperature Tstg –40 to +85 °C Warranty This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is shorter. Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the product shall be replaced free of charge. Laser diodes naturally have differing lifetimes which follow a Weibull distribution. Special warranties are also available. – 1 – E88060C08-PS Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. SLD302V Bottom View 1. LD cathode 2. PD anode 3. COMMON Pin Configuration

– 2– SLD302V Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C) Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1mW/cm 2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. ∗1 Wavelength Selection Classification Type SLD302V-1 SLD302V-2 SLD302V-3 Wavelength (nm) 785 ± 15 810 ± 10 830 ± 10 Type SLD302V-21 SLD302V-24 SLD302V-25 Wavelength (nm) 798 ± 3 807 ± 3 810 ± 3 APC ATC Safety goggles for protection from laser beam IR fluorescent plate Optical material Optical power output control device temperature control device LensLaser diode Optical boad Item Symbol Conditions Min. Typ. Max. Unit Ith Iop Vop λp Imon θ// ∆X, ∆Y ∆φ⊥ η D Threshold current Operating current Operating voltage Wavelength∗ Monitor current Radiation angle (F. W. H. M.∗) Positional accuracy Differential efficiency PO = 180mW PO = 180mW PO = 180mW PO = 180mW VR = 10V PO = 180mW PO = 180mW PO = 180mW 770 0.65 150 350 1.9 0.3 0.9 200 500 3.0 840 ±50 mA mA V nm mA degree degree µm degree mW/mA Perpendicular Parallel Position Angle ∗ F. W. H. M. : Full Width at Half Maximum

– 3– SLD302V Example of Representative Characteristics Optical power output vs. Forward current characteristics IF – Forward current [mA] Po – Optical power output [mW] Optical power output vs. Monitor current characteristics Imon – Monitor current [mA] Po – Optical power output [mW] Threshold current vs. Temperature characteristics Tc – Case temperature [°C] Ith – Threshold current [mA] Power dependence of far field pattern (parallel to junction) Angle [degree] Radiation intensity (optional scale) Power depecdence of near field pattern Radiation intensity (optional scale) Oscillation wavelength vs. Temperature characteristics Tc – Case temperature [°C] λp – Oscillation wavelength [nm] 0 250 5000 100 200 TC = 0°C TC = 25°C TC = 50°C 0 0.1 0.20 100 200 TC = –10°C TC = 0°C TC = 25°C TC = 50°C –1 00 1 02 03 04 05 0100 500 1000 –30 –20 –1 00 1 02 03 0 TC = 25°C PO = 180mW PO = 90mW PO = 30mW 50µm TC = 25°C PO = 180mW PO = 150mW PO = 100mW PO = 75mW PO = 50mW PO = 25mW –1 00 1 02 03 04 05 0780 790 830 820 810 800 PO = 180mW TC = –10°C

– 4– SLD302V Differential efficiency vs. Temperature characteristics Tc – Case temperature [°C] –10 0 50 403020100 0.5 1.0 1.5 ηD – Differential efficiency [mW/mA] Power dependence of polarization ratio Po – Optical power output [mW] 0 50 100 150 200 2500 Polarization ratio Tc = 25°C

– 5– SLD302V Wavelength [nm] 800 810 805 Relative radiant intensity Tc = 25°C Po = 40mW Wavelength [nm] 800 810 805 Relative radiant intensity Tc = 25°C Po = 120mW Wavelength [nm] 800 810 805 Relative radiant intensity Tc = 25°C Po = 200mW Wavelength [nm] 800 810 805 Relative radiant intensity Tc = 25°C Po = 80mW Wavelength [nm] 800 810 805 Relative radiant intensity Tc = 25°C Po = 160mW Power dependence of wavelength

– 6– SLD302V Wavelength [nm] 805 825 815 Relative radiant intensity Tc = –6°C Wavelength [nm] 805 825 815 Relative radiant intensity Tc = 12°C Wavelength [nm] 805 825 815 Relative radiant intensity Tc = 23°C Wavelength [nm] 805 825 815 Relative radiant intensity Tc = 35°C Wavelength [nm] 805 825 815 Relative radiant intensity Tc = 45°C Temperature dependence of wavelength(Po = 180mW)

– 7– SLD302V Package Outline Unit: mm M-248 (LO-11) Reference Slot 1.0 0.4 Photo Diode Window Glass Reference Plane LD Chip φ9.0 – 0.015 φ7.7 MAX φ6.9 MAX φ3.5

0.6 MAX

∗2.453.4 MAX 1.5

7.0 MAX

3 – φ0.45 PCD φ2.54 ∗Optical Distance = 2.55 ± 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 PACKAGE MASS 1.2g Sony Corporation