SLD131UL SONY | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Low current consumption IOP : 20mA (PO = 2.5mW)
  • Supports single power supply.
  • Low noise

Applications

  • Portable CDs Structure
  • GaAlAs double hetero laser diode
  • PIN photodiode to monitor laser beam output Absolute Maximum Ratings(Tc = 25°C)
  • Optical power output PO 4m W
  • Reverse voltage V R LD 2 V PD 15 V
  • Operating temperature Topr –10 to +60 °C
  • Storage temperature Tstg –40 to +85 °C – 1 – SLD131UL E94615-PK GaAlAs Laser Diode Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. LD PD COMMON Bottom View 1. LD anode 2. PD anode 3. COMMON Connection Diagram Pin Configuration M-259

– 2 – SLD131UL 0°–7° 7° SL SR Power θ// ΔSR = SL – SR SL + SR Electrical and Optical Characteristics (TC = 25°C) T C : Case temperature Item Symbol Conditions Min. Typ. Max. Unit Threshold current Operating current Operating voltage Wavelength Monitor current Rediation angle Positional accuracy Differential efficiency Astigmatism Dark current of PD capacitance of PD Ith Iop Vop lp Im q// DS R * DX, DY, DZ Df^ hD AS ID C T Po = 2.5mW Po = 2.5mW Po = 2.5mW Po = 2.5mW V R = 5V Po = 2.5mW Po = 2.5mW Po = 2.5mW | Z // –Z^ | VR = 5V VR = 5V, f = 1kHz 1.7 760 0.08 0.2 1.9 790 0.11 0.6 2.5 810 0.6 ±150 0.9 150 mA mA V nm mA degree degree µm degree mW/mA µm nA pF Perpendicular Parallel Asymmetry Position Angle

– 3 – SLD131UL Example of Representative Characteristics IF [mA] Imon [mA] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 P O – Optical power output [mV] IF – Forward current [mA] 0 0.1 0.2 0.3 30°CTc = 10°C Optical power output vs. Forward current characteristics 100 –20 0 20 40 60 80 Ith – Threshold current [mA] Tc – Case temperature [°C] Threshold current vs. Temperature characteristics 0.0 0.2 0.4 0.6 0.8 1.0 –20 0 20 40 60 80 η D – Differential efficiency [mW/mA] Differential efficiency vs. Temperature characteristics Po = 2.5mW –40 –30 –20 –10 0 10 20 30 40 Angle [ ° ] Relative radiant intensity Far field pattern (FFP) θ// Po = 2.5mW, Tc = 25°C –0.25 0.25 –1.0 0.0 1.0 Current [mA] Voltage [V] PIN diode voltage and current characteristics Po = 2.5mW, Tc = 25°C 0.1 1.0 –20 0 20 40 60 80 Im – Monitor current [mA] Tc – Case temperature [°C] 0.2 0.4 0.6 0.8 Po = 2.5mW Monitor current vs. Temperature characteristics Tc = 10°C 60°C 20°C 40°C 50°C 60°C Tc – Case temperature [°C]

– 4 – SLD131UL 40–40 –30 –20 –10 0 10 20 30 Relative radiant intensity Angle [ ° ] Power dependence of far field pattern (Parallel to junction) Po = 1mW Po = 2.5mW Po = 4mW Tc = 25°C –40 –30 –20 –10 0 10 20 30 40 Relative radiant intensity Angle [ ° ] Power dependence of far field pattern (Perpendicular to junction) Tc = 25°C Po = 4mW Po = 2.5mW Po = 1mW –40 –30 –20 –10 0 10 20 30 40 Po = 2.5mW –40 –30 –20 –10 0 10 20 30 40 Tc = 50°C Tc = 40°C Tc = 30°C Tc = 20°C Tc = 10°C Po = 2.5mW Tc = 60°C Tc = 50°C Tc = 40°C Tc = 30°C Tc = 20°C Tc = 10°C Tc = 60°C Temperature dependence of far field pattern (Parallel to junction) Temperature dependence of far field pattern (Perpendicular to junction) Relative radiant intensity Relative radiant intensity Angle [ ° ] Angle [ ° ]

– 5 – SLD131UL Power dependence of oscillating spectrum Relative radiant intensity λ – Wavelength [nm] 790 795 800780 785 Po = 4mW Po = 2.5mW Po = 1mW Tc = 25°C

– 6 – SLD131UL Temperature dependence of oscillating spectrum Relative radiant intensity λ – Wavelength [nm] 790 795 800785 PO = 2.5mW 805 Tc = 60°C Tc = 40°C Tc = 20°C

– 7 – SLD131UL Package Outline Unit: mm SONY CODE EIAJ CODE JEDEC CODE PACKAGE WEIGHT M-259 1.0 0.40.5 90° 12 Reference Slot φ5.6 – 0.05 φ4.4 MAX φ3.8 MAX 0.6 0.25

0.5 MIN

∗1.26

3.1 MAX

1.2 ± 0.1 6.5 132 3 – φ0.45 PCD φ2.0 LD Chip & Photo Diode ∗Optical Distance = 1.35 ± 0.15 Reference Plane Window Glass φ0.8 30° M-259 0.3g