SLD1231VL

SLD1231VL SONY | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Features

• Red visible light (685nm)
• Longitudinal single mode
• High power (Recommended optical power output: 30mW)

Applications

• AlGaInP quantum well structure laser diode Recommended Optical Power Output 30mW Absolute Maximum Ratings
• Optical power output Po 35 mW
• Reverse voltage V R LD 2 V PD 15 V
• Operating temperature Topr –10 to +50 °C
• Storage temperature Tstg –40 to +85 °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. Reference Slot 1.0 0.5 90° 0.4 φ5.6 – 0.025 φ4.4 MAX φ3.7 MAX φ1.0 MIN

0.5 MINWindow Glass

& Photo Diode 0.25 2.6 MAX∗1.26 1.2 ± 0.1 6.5 231 3 – φ0.45 PCD φ2.0 ∗Optical Distance = 1.35 ± 0.08 M-274 Package Outline LD PD COMMON Connection Diagram Pin Configuration Bottom View 1. LD anode 2. PD anode 3. COMMON Unit : mm Preliminary

– 2 – SLD1231VL Electrical and Optical Characteristics(Tc = 25°C) Tc: Case temperature Item Threshold current Operating current Operating voltage Wavelength Radiation angle Positional accuracy Differential efficiency Astigmatism Ith Iop Vop lp q// ∆X, ∆Y, ∆Z ∆f^ ∆f// SE As Po = 30mW Po = 30mW Po = 30mW Po = 30mW Po = 30mW Po = 30mW Po = 30mW Po = 30mW Po = 30mW 670 0.15 2.4 685 0.60 120 3.0 699 ±80 1.0 mA mA V nm degree degree µm degree degree mW/mA µm Symbol Conditions Min. Typ. Max. Unit Perpendicular Parallel Position Angle Handling Precautions (1) Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm 2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Safety goggles for protection from laser beam IR fluorescent plate Optical material LensLaser diode Optical board Optical power output control device Temperature control device (2) Prevention of surge current and electrostatic discharge Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by a human body. Be great careful about excess current and electrostatic discharge.

– 3 – SLD1231VL Example of Representative Characteristics 120100800 20 40 60 140 TC = 0°C TC = 50°C TC = 25°C TC = 25°C 40200–60 –40 –20 60 40200–60 –40 –20 60 TC = 25°C Po = 30mW Po = 20mW Po = 10mW Po = 5mW Po = 30mW Po = 20mW Po = 10mW Po = 5mW Tc — Case temperature [°C] Optical power output vs. Forward current characteristicsPower dependence of far field pattern (Perpendicular to junction) Po — Optical power output [mW] IF — Forward current [mA] Relative radiant intensity Angle [degree] Relative radiant intensity Angle [degree] Power dependence of far field pattern (Parallel to junction) Threshold current vs. Temperature characteristics Ith — Threshold current [mA] 504030–20 –10 0 20 60 10 100

– 4 – SLD1231VL Power dependence of spectrum Relative radiant intensity λ — Wavelength [nm] Tc = 25°C Po = 30mW 685 690 695 Po = 20mW Po = 10mW Po = 5mW 680

– 5 – SLD1231VL Temperature dependence of spectrum Relative radiant intensity λ — Wavelength [ nm] Po = 30mW Tc = 50°C 670 680 690 700 710 Tc = 25°C Tc = 0°C 660