SLD104AU SONY | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Low power consumption
- Single power supply
- Low noise
- Microminiaturized package (f5.6mm) Structure
- AlGaAs double hetero-type laser diode
- PIN photo diode for laser optical power output monitor Absolute Maximum Ratings(Tc = 25°C)
- Optical power output Po 5 mW
- Reverse voltage V R LD 2 V PD 15 V
- Operating temperature Topr –10 to +60 °C
- Storage temperature Tstg –40 to +85 °C Connection Diagram AlGaAs Laser Diode – 1 – E89418B81-PS Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. SLD104AU Pin Configuration
3 COMMON
- LD anode 2. PD anode 3. COMMON
– 2 – SLD104AU Electrical and Optical Characteristics(Tc = 25°C) Tc: Case temperature UnitMax.Typ.Min.ConditionSymbol Ith Iop Vop l Im q// R *1 ∆X, ∆Y, ∆Z ∆f^ hD AS S/N ID C T Item 1.7 760 0.08 0.2 1.9 780 0.15 0.45 Perpendicular Parallel Asymmetry Position Angle Threshold current Operating current Operating voltage Wavelength Monitor current Radiation angle (F. W. H. M.*) Differential efficiency Astigmatism Signal to noise ratio Dark current of PD Capacitance of PD 2.5 800 0.4 ±150 0.7 150 mA mA V nm mA degree degree µm degree mW/mA µm dB nA pF P O = 3mW PO = 3mW PO = 3mW PO = 3mW, VR = 5V PO = 3mW PO = 3mW PO = 3mW | Z// – Z^ | fC = 7.5MHz ∆f = 30kHz PO = 4mW VR = 5V VR = 5V, f = 1MHz PO = 3mWPositional accuracy Pow er SL SR 0 θ// –7° 7° ∆SR = | SL – SR | SL + SR * F. W. H. M. : Full Width at Half Maximum
– 3 – SLD104AU Example of Representative Characteristics –1.0 1.0 [V]0 0.25 [m A] –0.25 PIN diode current-voltage characteristics Tc = 25°C PO = 3m W V I 0 20 40 60 80 100 O ptical pow er output vs. Forw ard current characteristics IF – Forw ard current [m A] PO – O ptical pow er output [m W ] Tc = 25°C Tc = 50°C –40 –20 0 20 400 0.5 1.0 Far field pattern (FFP) Angle [degree] R adiant intensity (optional scale) 780 781 782 783 784 R elative light intensity vs. W avelength characteristics λ – W avelength [nm ] R elative light intensity PO = 5m W 778 779 780 781 782 R elative light intensity vs. W aveform characteristics λ – W avelength [nm ] R elative light intensity PO = 3m W θ// PO = 3m W –10 0 25 50 10010 100 Tem perature characteristic of threshold current TC – C ase tem perature [°C ] Ith – Threshold current [m A]
– 4 – SLD104AU Package Outline Unit: mm SO N Y C O D E EIAJ C O D E JED EC C O D E PAC KAG E W EIG H T M -259 1.0 0.4 0.5 90° R eference Slot φ5.6 – 0.05 φ4.4 M AX φ3.8 M AX 0.6 0.25
0.5 M IN
∗1.26 3.1 M AX 1.2 ± 0.1 6.5132 3 – φ0.45 PC D φ2.0 LD C hip & Photo D iode ∗O ptical D istance = 1.35 ± 0.15 R eference Plane W indow G lass φ0.8 30° M -259 0.3g