SLD65018 SAMSUNG | Alldatasheet
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PSamsunad Samsung Semiconductor Laser a - Contents - © How to read the part number - Numbering na " were on] ©) Red laser - 635nm 1, SLD63518240 for Measuring instrument - . - — 6 © Red laser - 650m 7, SLDGSOISZS0ST for Barcode Scarmer / Pointer ” . vee WZ 6, SLOGSOQE750ST for Barcode Scanmer / Pointer . 3 13. SLD65018371 for DVO-Combo / industrial Barcode Scanner eanaseeeee OD 1) Infrared taser - 780rn 20. SLD78018371 tor CO-R / COP ... oe - " 25 ©) Red / Infra-Red Monolithic laser Ce ee.)
a Samsung Semiconductor Laser So RT I= General handling precautions
1 INTROOUCTION
Lense Dieta (LD) ise senticeneucter chwice wih pn jureten winch emit laser ) rang camarency ¢ rection by apphing & Oarert in forward dewcton However in Gterence form usualy sericorducior glotes (D fave the rect pecutertien 1.LD usualy operens at operation curert 20-40mA for # low power LD and £0-120mA fore high power LO and ew ‘septet forward wornge (usualy ~2) Bat very inpertant pecufierty of LD ie high aumert denemes |-2000-4000WVor"| dump LD operation. Therefor, LO qperuton generaies a sigtiicent heat Tin oxtve lover 2m Norra operation mode LO hes @ futeteuty erat vows for Mewar cusput power (+The tor low power LD aid ‘22*2Z0TW tor mage power LO} But hey hove every figh ensty of leer redeton in a active tnyer and on cufpul minor feort (-1.06ecer oRd more, Therefore. Mere is 6 apical power rel caused by cptad eemage of output mirror facet / COD {Ceteabopie Cpteal Denage) / a Wer un . ~~ | ra | Atm COO ' i 4 j A » - High be [ Peeward Cureet (wa) | Fig. 1 COO (Catmmepie Opticn! Dunage) Fig.) hows ws typina! COO phenarsanen of laser Goce When you operate LO afer ccourence of COD, opersing czvent at
3 HpRGE power woul be mH Nghe fran before COD Ag tibh f= fe wernt cane ner power cove net WRC
requeed power due to COD Fig ich. When you Give LD. please pey attention to LD qpermtan under COD fewer eve ‘3LD fee @ very quick elctice ane lygitl feporme (lowe fen @ fev netosecotd ere leas) in connection wih tese fevers LD we edrerety waceptbie to dermege cased by curert wegen musi be eheeed hee fat even an imatartanecus application extra pulse current cause @ reget L's detenoraton Weenever You Mente LD, please pay st atenten to Be folowing preceutore
2 ELECTROSTATIC SURGE PREVENTION
r 4. * 1 fe te neceneery to tee Bat LO ere euin maw wenstve te fecorns dectarge ban teed mentee Sen a vw? - Caer) cecpire more cared ponverte meenres COD also cod be IM CoTOIOF \\Blote’ —rencened ty enel sige cue t Secboetato Gacharge Fig 2 ‘ + ows us 0 state soriaty test craut of Semaung When anipping Fig. 2 Static Bectrichy Text Cheuk The laser dodes, Dey would se inserted in antaits Gags aa prove! emcrmnan: Curpng by Memagettutcn Emre ct a typrcel gt es 5 workbench for operation Mh Larer Diode Pig. 3 Ka. 1 Ea {.Oreund work tables ard floore using conductive thle fal ae mate ane Noor mate: Fa 2.Greand operemre waning concactive wrist bends; ml 2.All wend tools o8 wall as soldering irons show be | = ‘ aroun ] -_ The grounding show) be comected through 9 resistor of oad i serra HO Fig 2
an Samsung Semiconductor Laser snes eS 1.While operating, LD can be easily damaged by surge currents which may occur during power on and off of the drive circuit or while adjusting the optical power output. actooy i~ aa to ~-, FY = Power Rating i | \\ In this case, try to suppress the overshoot or lower the overshoot 7 5 © cunent while the LD is on, will result in deterioration. it Is desirable to use t shielded cables. Fig. 5 5.Use a reliable control for setting the operation current. improper wid Wieible Laser Radiat Although the typical optical output power of Samsung low power laser fay ‘MWicm’. For observing laser beam safely, you always have to use safety 77" euass 38 LASER PRODUCT gowdes at Hock rtrd ro.
[=| Electrical & optical parameters & definitions Maximum allowable instantaneous light power in pulse or CW Output optical power Pop —_ mode. Up to this output level there are no kinks in the Light- Current curve lop | Te forward current through the LD which necessary for the P LD to produce its specified typical optical output power The forward voltage across the LD by forward operating Operating voltage Vop current The wavelength of the laser spectral line with the greatest ap intensity The value of the incremental change in laser beam power Watt-ampere / Slope / Efficiency SE for an incremental change in forward current above the threshold current. The monitoring photodiode current is proportional to LD laser Monitoring current Im | output power! at a specified reverse bias voltage The forward current value at which the LD begins to produce Threshold current Ith laser output The laser beams full angular at the half-maximum intensity Laser beam divergency 0M | points(FWHM), measured in horizontal plane /parallel to the in horizontal plane LD p-n junction plane/ The laser beam’s full angular at the half-maximum intensity Laser beam divergency © | points(FWHN), measured in vertical plane in vertical plane perpendicular to the LD p-n junction plane/ Maximum admissible reverse bias voltage, which may be LD reverse voltage VR applied to the LD without a damage Maximum admissible reverse bias voltage, which may be PD bias voltage VRp applied to the monitoring PD without a damage Range of the case temperature within which LD may be Operating temperature Topr safety stored Range of the ambient temperature within which LD may be ‘Storage temperature Tstg safety stored Forward current If Current through the forward biased LD Forward bias voltage Vf | Laser diode voltage by an applied forward bias Se
Samsung Semiconductor Laser [=] Package 1 : TO-18 (5.6mm) [=] Package 2 : 3.8mm Small size ( Top view ) ( Top view ) Ae | | ° 2 ; Oy —O En a = a ee pnw @ © © lolero) { Front view ) ( Front view ) a “| hes | |
a Samsung Semiconductor Laser see SS [=| Package 3 : Mold type package by J «| ZZ I Ei 18 at R j POSS aL ks co E we Bes | | elf 4 HH mma ® O evan ["| l™l How to read the part number - Numbering « SLD - 650-18 -271X ® Samsung Laser Diode @ Wavelength : 635nm, 650nm, 780nm @ Package type : 18 = TO-18 (5.6mm) 38 = Small package (3.8mm) * Suffix 'F' = Mold type package @ Optical power: 2 > 5mW, 3 = 7mW, 8 > SomW, 9 = 90mW ® Operating Temp : 4 => 40°C, 5 = 50°C, 6 = 60°C, 7 = 70°C © Pin configuration : 0 = LD anode, PD cathode, common 1 = LD anode, PD anode, common 2 = LD cathode, PD anode, common © Suffix : Derivative parts gS
a Samsung Semiconductor Laser snes eS 1. SLD63518240 — '®] Application : Measuring Instrument Lo ed PO jm] Features 2 * Lasing wavelength : Ap = 635nm Fsupsso1s240 1 * Optical output power: Po = SmW (CW) * Package type :TO-18[% 56] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure lM Absolute maximum ratings [ Te = 25 ] Parameter | Symbol Value | Unit : Optical output power Po 7 mw - LD reverse voltage VR 2 v : PD reverse voltage VR 30 v - Operating temperature Topr “10 ~ +40 c : Storage temperature Tstg = 40 ~ +85 c : | Electrical & optical characteristics [ Te = 25°C ] a Opteatouat ower | re || Operating current lop Po = 5mW 38 40 mA Operating voltage Vop Po = SmwW 22 | 27 v Mentor cure Lim | pos smw | aot | aoe | ot | ms Lasing wavelength a Po = 5mW 637 640 nm eu Po = SmwW 8 | 15 P| meme AeL Po = SmW . +25 i
| Application: Measuring Instrument lb f os } po | Features 3 [ SLD63518240C ] * Lasing wavelength —: Xp = 635nm * Optical output power: Po = SmW (CW) + Package type :TO-18[ 6 56] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure | Absolute maximum ratings [ Te = 25 ] steal ent power [of mW LD reverse votose F ¥ PD reverse votope 0 v ———— 0-00 c Sieg tomperte wag = 05 5 ® Electrical & optical characteristics [ Te = 25°C ] Operating current lop Po = 5mW 33 36 mA Operating voltage Vop Po = SmW 22 27 v Lasing wavelength A Po = 5mWw 637 | 840 | nm eu Po = 5mW 8 15 Beam divergence degree aell Po = 5mWw - | 415 Beam angle accuracy | ael Po = 5mW . £25 Differential efficiency a : 03 | 05 | 07 | mwima Astigmatism As Po = 5mW. - . - um Se
| Application: Measuring Instrument PP 3 io & 7 ¥ Po | Features 3 [ SLD63518240J ] * Lasing wavelength —: Ap = 635nm * Optical output power: Po = SmW (CW) * Package type :TO-18[ 6 56] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure | Absolute maximum ratings [ Te = 25 ] Optical output power | mm | 7 mw Lo rea votooe 2 v rover vote 30 v Operating temperature -10 ~ +40 c Storage temperature = 40 ~ +85 c ® Electrical & optical characteristics [ Te = 25°C ] innit “smtot conn | | pt Ei Operating current top Po = 5mW 43 48 mA Operating voltage Vop Po = SmW 23 | 27 v Lasing wavelength B Po = 5mWw 637 | 840 | nm ow Po = SmWw 8 15 Beam divergence degree ae Po = 5mw - | 415 Beam angle accuracy | Agel Po = 5mW a £25 Se
a Samsung Semiconductor Laser snes eS 4. SLD63518250 — [=| Application ; Measuring Instrument, Barcode Scanner Lb k ed } PD jm Features [ SLD63518250 ] * Lasing wavelength : Ap = 635nm * Optical output power; Po = S5mW (CW) * Package type : TO-18[ 56] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure ll Absolute maximum ratings [ Te = 25T ] : Parameter | Svmbot | Value Une Osteal out power [om ow LO reverse watage 2 v PD reverse votage 0 v pean temperate “0 — 80 co ® Electrical & optical characteristics [ Te = 25°C ] a opteal ouput power | PF mw Operating curent ip Po = bn | 2 | mA Montor cure [im | resem | or | os | 08 | ma Lasing wavelength A Po = ni es | 640 | om seme {ote terete [es | rostm | so | a | we | sen Po = ni ~ | e20 Petes ta Differential efficiency 1 - 06 08 mwimA i
an Samsung Semiconductor Laser ee 5. SLD63518260 - Preliminary 1 3 [=| Application ; Measuring Instrument, Barcode Scanner iw A ¥ Po | Features 2 [ SLD63518260 } * Lasing wavelength —: Ap = 635nm * Optical output power; Po = S5mW (CW) 3 * Package type :TO-18( 956] DY keo * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure 2 - [ SLD63518262 } lll Absolute maximum ratings [ Te = 25T ] . Open ouput per |» | 7 oa LD vv vote 2 v 0 mare volge 90 v Cpetng enperae “0 ~ +60 5 ——— ao ~ 8s 5 ® Electrical & optical characteristics [ Te = 25°C ] Parameter “Symbol Condition Min. | Typ. Max. Unit Optical output power Po ; - 5 ~ | mw Operating current lop Po = 5mW 45 60 mA Operating voltage op Po = Smw 22 | 27 | v Lasing wavelength a Po = 5mW 630 637 640 nm on Po = Smw 7 | 88 | 10 Beam divergence 2 | senee Ae Po = S5mW - +20 ol Po = Smw - | 228 AA
an Samsung Semiconductor Laser SN NN 6. SLD63518350 - Preliminary 1 3 {Application : Measuring Instrument f } PP 3 iw A ¥ Po ll Features 3 * Lasing wavelength : Ap = 635nm ['SLD63518350 ] * Optical output power: Po = 7mW (CW) 3 * Package type : TO-18[ © 56] * Built-in photodiode for optical power monitoring Lo ¥ 7 Reo * High power laser * InGaAIP laser with multi-quantum well structure 2 [ SLD63518352 } Ml Absolute maximum ratings [ Te = 250 ] ee ee eee ee Optical output power Po 10 mw LD reverse voltage vr 2 v PD reverse voltage VR 20 v Operating temperature Topr 10 ~ +50 c Storage temperature Tstg ~40 ~ +85 cv Wl Electrical & optical characteristics [ Te = 25 ] Parameter ‘Symbol Condition Typ. | Max, Unit Optical output power Po - 7 - mw Operating current lop Po = 7mW 45 60 ma Operating voltage Vop Po = 7mW 22 27 v Lasing wavelength a Po = TmwW 637 | 640 | nm ou Po = TmW as | 10 Beam divergence Aol Po = 7mW - +20 Beam angle accuracy : sen Po = TmW - | 226 Differential efficiency n - 06 0.8 | mWimA Astigmatism: AS Po = 7mW - - um
an Samsung Semiconductor Laser snes eS 1 3 [=I Application : Barcode Scanner, Pointer to & Yeo jm Features 2 [ SLO65018250ST ] * Lasing wavelength : Ap = 650nm * Optical output power; Po = S5mW (CW) * Package type : TO-18[ 56] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure ll Absolute maximum ratings [ Te = 25T ] Parameter [symbot [vate | one pial output poner [om 7 mi 1D reverse vtage 2 v PD reverse votope 20 v Opens temperate 0 ~ +60 vc storage temperature wo +85 c ® Electrical & optical characteristics [ Te = 25°C ] Parameter ‘Symbol Condition Min. | Typ. Max. Unit ptal output poner Po : 8m Testo coment | tw fT | | Operating current lop Po = 5mW 30 40 mA Montor cure | im | ro=smw | o | 02 | os | ma Lasing wavelength a Po = 5mW 655, 660 am Beam divergence a | 8 degree Beam angle accuracy + Drterentaleficeny 1 ; 05 | 075 | 095 | miWima i
a Samsung Semiconductor Laser snes eS 8. SLD65038250ST — [=| Application ; Barcode Scanner, Pointer Lb k ed } PD | Features * Lasing wavelength : Ap = 650nm [ SLD650382508T ] * Optical output power : Po = SmW (CW) * Package type : Small Package [ @ 3.8 ] * Built-in photodiode for optical power monitoring * Ultra small package * InGaAIP laser with multi-quantum well structure '™] Absolute maximum ratings [ Tc = 25T ] Optical output power Po 7 mw - LD reverse voltage VR 2 v : PD reverse voltage | VR 30 | v Operating temperature Topr “10 ~ +60 c : Storage temperature ‘Tstg -40 ~ +85 cv : ll Electrical & optical characteristics [ Te = 25°C ] — mee Opteat outer ower | re | fw Operating current lop Po = 5mwW 35 45 mm Montorcurent pm | ress | os | 02 | os | mm eu Po = 5mW 9 | 1 seem eroence pes | res smw | 2 | wo |e | dears ween [EE Differential efficiency n . 02 05 08 | mWimA i
ee] 1 3 (=| Application : Barcode Scanner, Sensor to & Yeo ™ Features 3 . [ SLD65018260 ] * Lasing wavelength —: Ap = 650nm * Optical output power: Po = SmW (CW) * Package type :TO-18[ 656] * Built-in photodiode for optical power monitoring * InGaAIP laser with multi-quantum well structure | Absolute maximum ratings [ Te = 25T ] Optical output power | pm | 7 mw UD reve vote 3 v PD reverse voltage 30 v Storage temperature -40 ~ +85 v (@) Electrical & optical characteristics [ Tc = 25U ] Operating current lop Po = SmW 40 50 mA Operating voltage Vop Po = SmW 22 26 Vv Lasing wavelength EB Po = mW 643 | 651 | 654 | onm eu Po = SmW 7 8 95 Beam divergence degree aol Po = SmW - 448 Beam angle accuracy | AeL Po = SmW - £25 TT
an Samsung Semiconductor Laser snes eS 1 3 |) Application : DVD-P, DVD-R PP Lo t od : PD jm Features 2 { SLD65018271 } * Lasing wavelength : Ap = 650nm * Optical output power; Po = S5mW (CW) * Package type :TO-18[% 56] * Built-in photodiodes for optical power monitoring * InGaAIP laser with multi-quantum well structure ll Absolute maximum ratings [ Te = 25T ] Parameter | symbot | Value Unit pial output poner [om mi 1D reverse votage 2 v BD reverse votage 20 v pean temperature 0 ~ +70 c storage temperature a0 = 185 : ® Electrical & optical characteristics [ Te = 25°C ] oneal owput power | Pe Fm Operating curent ip Po = bn | 0 | mA Operating voltage Vop Po = SmwW 22 26 v Montor cure [im | resem | or | oz | o4 | ma Lasing wavelength A Po=smw | 64s | 65 | 687 | am on Po = én 7 [8 |W Beam divergence dears sen Po = ni ats AeL Po = SmW .- +25 Differential efficiency n - 0.65 09 mWimA Astigmatism As Po = 5 mW . 12 am i
an Samsung Semiconductor Laser snes eS 1 3 [=I Application : DVD-P, DVD-R i ¥ 7 ¥po jm Features 2 [ SLD65018271L ] * Lasing wavelength : Ap = 650nm * Optical output power; Po = S5mW (CW) * Package type :TO-18[% 56] * Built-in photodiodes for optical power monitoring * InGaAIP laser with multi-quantum well structure ll Absolute maximum ratings [ Te = 25T ] Parameter [7 SembotT vatue [une opteal out power [om mi 1D reverse votage 2 v PD reverse votge 0 v pean temperature 0 - 70 c storage temperature a0 185 e ® Electrical & optical characteristics [ Te = 25°C ] otal ouput power | PF mw Tweswolument | mw ||| | om Operating arent ip Po = Bri 7a) mA Montor cure Lim | resem | or | oz | 03 | ma Casing wavelength ‘ Po=smw | 64s | 654 | 687 | am seem seroence dears aon Po = ni ats AGL Po = SmW .- £25 Differential efficiency 1 - 05 07 09 mwimA Astigmatism As Po = 5 mW - . 12 am i
an Samsung Semiconductor Laser snes eS 1 3 |) Application : DVD-P, DVD-R PP LD t a t PD jm Features 2 * Lasing wavelength : Ap = 650nm [ $L065018271M ] * Optical output power : Po = SmW (CW) * Package type :TO-18[% 56] * Built-in photodiodes for optical power monitoring * Multi-mode laser * InGaAIP laser with multi-quantum well structure '™] Absolute maximum ratings [ Tc = 25T ] Parameter | Symbol Value Unit Optical output power Po 7 mw LD reverse voltage vR 2 v Operating temperature Topr -10 ~ +70 cv Storage temperature Tstg -40 ~ +85 c ll Electrical & optical characteristics [ Te = 25°C ] meal owput power | Pe Operating current lop Po = 5mwW 72 90 ma Operating voltage Vop Po = SmW 22 26 v Montor cure | im | res smw | ot | 02 | 08 | ms Casing wavelength 1 po=smw | 64 | 688 | 680 | om on Bo = Sri 7 | 8 | 2 Beam divergence Differential efficiency 1 - 06 08 mwimA Astigmatism: AS Po = 5 mW - 15 um i
a Samsung Semiconductor Laser sa ee 13. SLD65018371 — (8 Application : DVD-Combo, Industrial barcode scanner ret i ¥ 7 ¥po l@) Features * Lasing wavelength: Ap = 650nm ('$1065018971 * Optical output power: Po = 7mW (CW) 3 * Package type :TO-18[ 6 56} * Builtin photodiode for optical power monitoring * High power laser * InGaAIP laser with multi-quantum well structure 2 [ SLD65018372 ] (@) Absolute maximum ratings [ To = 25 ] , Parameter | Symbol Value Unit : Optical output power Po 10 mw LD reverse voltage VR 2 v - PD reverse voltage | VR 30 | v Operating temperature Topr -10 ~ +70 cv - Storage temperature Tstg ~40 ~ +85 c - l8] Electrical & optical characteristics [ Te = 25 ] SEG Cd DN ONE Optical output power 7 - mw : Operating current lop Po = 7mW 37 43 ma : Operating voltage Vop Po = 7mW 225 | 26 v el Po = 7mwW 7 9 | 10 Beam divergence degree ao fee te ey Po = 7mW - | 226 Differential efficiency n : 075 1.0 | mWimA Astigmatism As Po = 7mW. | 6 um TT
psimsunad Samsung Semiconductor Laser snes eS 14, SLD65018871 - Preliminary 1 3 (=I Application ; DVD-RW, DVD-RAM PP LD ret PD jm Features 2 [ SLD65018871 ] * Lasing wavelength : Ap = 650nm * Optical output power; Po = 50mW (CW) * Package type :TO-18[% 56] * Built-in photodiode for optical power monitoring * High power laser ll Absolute maximum ratings [ Te = 25T ] Parameter [symbot [vate a pial output poner [of 7 mi 1D reverse votage 2 v PD reverse votope 20 v Opens temperate a0 ~ +70 vc storage temperature a0 ~ 485 c ® Electrical & optical characteristics [ Te = 25°C ] Parameter 1 symbol Condition Min. | typ. | Max. | unit Operating current lop Po = 50mW 85 100 mA Lasing wavelength a Po = 50mW 656 660 am Beam divergence | | ee sel Po = 50mW - +20 Differential efficiency n - 10 - mWimA i
an Samsung Semiconductor Laser snes eS 1 3 [= Application : CD-P, CD-R iw ¥ 7 ¥pp ™ Features a [ SLD78018261 } * Lasing wavelength : Ap = 780nm * Optical output power : Po = 3mW (CW) * Package type : TO-18[ © 56 ] * Built-in photodiode for optical power monitoring + AlGaAs laser with multi-quantum well structure {™] Absolute maximum ratings [ Tc = 25C ] Parameter |. Symbot Value | Unit Optical output power Po 5 mw. LD reverse voltage vR 2 v PD reverse voltage vR 30 v Operating temperature Topr -10 ~ +70 cv Storage temperature Tstg -40 ~ +85 c (™) Electrical & optical characteristics [ Te = 25 ] iy Parameter ‘Symbol Condition ‘Min, Typ. Max. Unit: Optical output power Po - - 3 - mw Operating current lop Po = 3mW 46 55 mA Operating voltage Vop Po = 3mW 1.9 23 v Lasing wavelength a Po = 3mW 770 788 810 nm eu Po = 3mw 10 125 14 Beam divergence sel Po = 3mwW - +15 Agel Po = 3mw - £30 Differential efficiency n - 02 o4 06 mWimA Astigmatism: As Po = 3mw : - um i
an Samsung Semiconductor Laser snes eS 1 3 [™ Application : CD-P i ¥ 7 Yep ™ Features 3 [ SLD78018261F ] * Lasing wavelength : Ap = 780nm * Optical output power : Po = 3mW (CW) * Package type : Plastic mold Package * Built-in photodiodes for optical power monitoring * AlGaAs laser with multi-quantum well structure | Absolute maximum ratings [ Tc = 25T ] Parameter Symbol Value Unit Optical output power Po 5 mw LD reverse voltage VR 2 v PD reverse voltage vR 30 v Operating temperature Topr 10 ~ +70 c Storage temperature Tstg -40 ~ +85 cv {™) Electrical & optical characteristics [ Te = 25 ] Parameter Symbol Condition Min, Typ. | Max. Unit Optical output power Po - - 3 .- mw Thesis curent | mt Operating current lop Po = 3mW 19 23 mA Operating voltage Vop Po = 3mW 02 05 v Lasing wavelength a Po = 3mW 12 14 nm eu Po = 3mw 35 40 Beam divergence ek esamy || ats | degree sel Po = 3mw - +30 Agel Po = 3mw - + 60 Pesttorl accuracy | axaviaz | po= aw | 02 | 096 | 08 | um Differential efficiency n - mwimA Astigmatism: As Po = 3mw um i al
an Samsung Semiconductor Laser snes eS 1 3 | Application : LSU (Laser printer) t i ppl (l pI ) Lo rnd PD jm Features 2 [ SLD78018262C } * Lasing wavelength : Ap = 780nm * Optical output power; Po = 3mW (CW) * Package type :TO-18[% 56] * Built-in photodiode for optical power monitoring * AlGaAs laser with multi-quantum well structure ll Absolute maximum ratings [ Te = 25T ] teal att gover [ me | 5 mi 1D reverse votage 2 v PO revere vtage 20 v pean temperature “0 ~ +80 c storage temperature a0 185 e ® Electrical & optical characteristics [ Te = 25°C ] oneal owt power | Pe | | m Operating arent ip Bo = an 8 | mA Operating voltage Vop Po = 3mW 19 23 v Montor cure [im | rosamw | ons | 02 | a7 | ma eu Po = 3mw 10 125 14 Beam divergence — onto Agel Po = 3mw .- £25 Dirt eteeney : ; 03 | 042 | 06 | mina Astigmatism As Po = 3mw - . - am i
an Samsung Semiconductor Laser snes eS 1) Application : Disk-man (CD-P) PP (cop) ww ¥ 7 ¥po jm Features 2 [ SL078018271D } * Lasing wavelength : Ap = 780nm * Optical output power; Po = 3mW (CW) * Package type :TO-18[% 56] * Built-in photodiode for optical power monitoring * AlGaAs laser with multi-quantum well structure l™ Absolute maximum ratings [ Te = 25 ] i Parameter Ng “Symbol Value Coie Opal out power | or | 4 mw (0 reverse watage 2 v BD reverse votage 20 v pean temperate 0 ~ +70 c storage temperature a0 = 185 : ® Electrical & optical characteristics [ Te = 25°C ] oneal ouput power | Pe Fm Operating curent ip Bo = am | 8 | mA Operating voltage Vop Po = 3mw 1.9 23 v Montor cure Lim | rosamw | or | a2 | 06 | mm rT, o = an 75 | 98 | 1 Beam divergence |» | onto Differential efficiency 1 - 07 0.89 44 mwimA Astigmatism As Po = 3mw - . - am i
psimsunad Samsung Semiconductor Laser snes eS 3 1 3 | Application : LSU (Laser printer) PP ( Printer) lw A’ ¥ pp ot $00 jm Features 2 2 [ SLD78018360P } [ SLD78018361P } * Lasing wavelength : Ap = 780nm * Optical output power: Po = SmW (CW) 3 3 * Package type :TO-18[% 56] iY Keo * Built-in photodiode for optical power monitoring * AlGaAs laser with multi-quantum well structure 2 [ SLD78018362P } ll Absolute maximum ratings [ Te = 25T ] Parameter symet | vate tnt Opal output poner [oo | 7 mW 1D reverse vtage 2 v PD reverse votage 0 v Operating temperate “10 ~ +60 E ioe temperature a0 = 485 c ®| Electrical & optical characteristics [ Te = 25°C ] a cine | mest canton | in yt | on Operating curt [ts | pesemw ||| eo | ms dees Lose | possmy | = |. | s20 | ee ee Orferenalecwney | on | || | 08 | mina gmatism Pmin at 9 &.1 duty cycle “um i
an Samsung Semiconductor Laser snes eS 1 3 [= Application : CD-R, CD-P i ¥ 7 ¥pp jm Features 2 * Lasing wavelength : Ap = 780nm [ SLD79018371 ] * Optical output power : Po = 7mW (CW) * Package type :TO-18[% 56] * Built-in photodiode for optical power monitoring * High power laser * AlGaAs laser with multi-quantum well structure lm Absolute maximum ratings [ Tc = 25 ] Parameter | Symbol Value | Unit Optical output power Po 10 mw LD reverse voltage vR 2 v PD reverse voltage VR 30 v Operating temperature Topr 10 ~ +70 c Storage temperature Tstg -40 ~ +85 c ll Electrical & optical characteristics [ Te = 25°C ] oneal ouput power | pe Pm Operating voltage Vop Po = 7mW 20 23 v Mentor cure _ im | pestmy | ot | 02 | os | ma on Pe = Tm «|e « Beam divergence degree Aol Po = 7mw - +15 aon Po = Tit ~ | 80 Drferenta ffeeney : : oss | 11 | mWima Astigmatism AS Po = 7mW - 15 um i
an Samsung Semiconductor Laser snes eS 21. SLD78018971 - Preliminary 1 3 [=| Application ; CD-RW i ¥ 7 ¥pp | Features 3 [ SLD78018971 } * Lasing wavelength : Ap = 785nm * Optical output power: Po = 100mW (CW), Po = 220mW (Pulse) * Package type : TO-18[ 56] * Built-in photodiode for optical power monitoring * High power laser ll Absolute maximum ratings [ Te = 25T ] Parameter [symbol | Value Unit Opal output poner [| 1% mW 1D reverse vtage 2 v PD reverse votage 0 v 10 ~ +65 (CW) cv Sioa temperate a+ |e ® Electrical & optical characteristics [ Te = 25°C ] Parameter ‘Symbol Condition Min. | Typ. | Max. | Unit Operating curent ip Po = son 90 | 180) mA Lasng wavelenah A po eonw | 780 | 7a | 788 | om Beam divergence | «| nee sen bo = som ~ | s20 Diterentaleiceny 1 ; 10) 48 | ima i
«Samsung Semiconductor Laser sian 22. 2 Beam Laser - Preliminary [= Application : DVD-P, DVD-R jm Features * Lasing wavelength; Ap = _650nm (DVD), 780nm (CD) * Optical output power; Po = SmW (650nm), 7mW (780nm) * Package type :TO-18[ > 56], 4 Pin * Built-in photodiode for optical power monitoring * 1 Chip 2 Beam laser : Monolithic ll Absolute maximum ratings [ Te = 25T ] ean ome ae ie Optical output power Po 7(650nm), 10(78Onm) mw 10 reverse votape ee ee PD reverse voltage vR 30 v Operating temperature Topr -10 ~ +70 cv Storage temperature e {™] Electrical & optical characteristics [ Te = 25°C ] Parameter _ | Symbol Condition Unit | Mine | twp. | ax. [ons | type | oes | oneal oupet ower | ro | | = | os | P| || Opwatng curent | top [po s,tmw| - | vo | ve | - | se | 66 | ma | ow [ress row] 7 | as |i [| | as | Beam divergence dogee | so pe=srmw| - | - [esol - | - [sso] Beam towranee [TP TT Tm astoraton | as fro= stow] | | | | | im fr ee
an Samsung Semiconductor Laser Se on te f=] Packing aaenrinsy > Ty i i | | [Lor No. exam i eee Py ‘ater ne) * spesoT8sr1 {1 Le @oev man no)! LOT = 305-1 Ie MOCVD patch Nod | le H + ex) 3: MAR ! t ! A: oct i |s66nm seam | ©: bec i ! | £ LASER DIODE [S000EASIDE BOX H (/ re6mm {2 NSIOE BoxEsOUTSDE 80x | t, | enooeAOUTSIDE Box | 350mm pe I=] Labeling ESD waming label > Top view A eeaeememens y | $LD65018371 | DP Side view > Side view ‘Lpeccseoen| ) Eee | Semco P/N