SL1002 IKSEMICON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Low Speed Switching NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Tc=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 7 A IB Base Current (DC) 0.6 A PC Collector Dissipation (TC=25°C) 10 W Rθja Junction to Ambient 132 °C/W Rθjc Junction to Case 13.5 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics Tc=25°C unless otherwise noted Characteristics Symbol Unit Measurement Mode Min Max DC Current Gain (1), (2) hFE Vce =2V, Ic =20mA 30 DC Current Gain (1), (2) hFE Vce = 2V, Ic = 1A 60 400 Collector Cut-off Current Icbo μA Vcb = 30V, Ie = 0 1.0 Collector Cut-off Current Icbo μA Vcb = 40V, Ie = 0 100 Emitter Cut-off Current Iebo μA Veb = 3V, Ic = 0 1.0 Emitter Cut-off Current Iebo μA Veb = 5V, Ic = 0 100 Collector-Emitter Saturation Voltage (1) Vce (sat) V Ic = 2A, Ib = 0.2A 0.5 Ic = 0.8 A, Ib = 0.02 A 0.1 Base-Emitter Saturation Voltage (1) Vbe (sat) V Ic = 2A, Ib = 0.2A 2.0 (1) Pulse Test : Pulse Width ≤ 300㎲. Duty Cycle ≤ 2% (2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reli ability. SL1002 SOT-223 SL1002 Emitter 1 2 3 Collector Base
2011, February, Rev. 01
2011, February, Rev. 01
2011, February, Rev. 01 SOT-223