SKKE600 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
A loaucti, LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SKKE600 Rectifier Diode Module Features: Heat Transfer through aluminium nitride ceramic isolated metal base plate. Precisious metal pressure contact for high reliability. O o v '•' 1200 1600 2000 2200 : y.v,*. - 1200 1600 2000 2200 'FRMS B 93° A (maximum value for continuous operation) !FAV = 600 A (sin. 1 SO; Tc = 100 °C) SKKE 600/12 SKKE 600/16 SKKE 600/20H4 SKKE 600/22H4 symbol 'FAV 'FSM i2t Vo> rT
- RD Rth(i-c) Rth(c-s) Tvi Tstg Visol a m Case Conditions sin.180;Tc = 100'C Tvj = 25°C; 10ms Tvj = 150 °C; 10ms Tvj = 150°C;8,3... 10ms Tvj = 25 °C; Ip = 3000 A Tvj = 150°C Tvj=150°C Tuj= 150"C; VRD = VRRM cont.; per diode = per module sin. 180; per diode = per module per diode = per module to heatsink to terminals approx. Values 600 22000 18000 2420000 1805000 max. 1,5 max. 0,75 max. 0,25 max. 15 0,07 0,075 0,02 -40... + 150 -40... + 130 5± 15% 17 ± 15% 5*9,81 940 A 42 Units A A A A2s A=s V V mn mA K/W K/W K/W Nm Nm m/s" g Quality Semi-Conduetors
52.3
0 IP. 200 400
600 A 800
Fig, 11t Power dissipation per diode vs. forward current SKK£6QQ*)*11R Fig, 11R C 150 0,1 K/W 0,08 0,07 0,06 0,05 0,04 0,03 0,02 Zm 0,0 Fig. HTranSil SXKESOQ x»*-14 SH i . — , ^#~ -}• t * M -t-< E ett\\t\\ DUO "*T ^. -, -t , A , *. u, » » i. , .
- * I ' '• I ..I 4r-^ 4^ -J. *_y i^-n j, ,,4 T * ts f I i ! ™i^, , vv r i >*- <"• 0.1 t 0,01 0,1 1 snt thermal impedance vs. time rJ 'f 2 - i - ,j _ :tfi(j-«)
- ntflo)
- ~ 4, I 10 s j i i p I M 100 3000 0,8 1,2 V 1,6 Fig, 15 Forward charaoteristtes SKKEBOO ,xl*-16
- HjMt 22 kA i 1 ] I IfsM|iw> cj = 18 kA ms 1000