SK52B HDSEMI | Alldatasheet

Document overview

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Technical content

Features

o

  • VRRM 20V-200V
  • High surge current capability

Applications

  • Rectifier From 2 To 20X Marking Polarity: Color band denotes cathode SK 5X H igh Diode Semiconductor SMB er Notes: copper pad areas Schottky Rectifier SK 52 THRU SK 520 Electrical Characteristics (T =25℃ Unless otherwise specified） Item Symbol Unit Test Conditions SK 5 2 3 4 5 6 8 10 15 20 Repetitive Peak Reverse Voltage V RRM V 20 30 40 50 60 80 100 150 200 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, TL(Fig.1) 5.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 150 Junction Temperature T J Storage Temperature T STG ℃ -65 ~ +150 a Item Symbol Unit Test Condition SK 5 Peak Forward Voltage V F V I F =5.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ I RRM2 Ta =100℃ 20 10 Thermal Resistance(Typical) R θJ-A W Between junction and ambient 60 R θJ-L Between junction and terminal 20 2 3 4 5 6 8 10 15 20 0.55 0.85 0.7 0.5 V 14 21 28 35 42 56 70 105 140 Maximum RMS V RMS Voltage 0.95 0.2

H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (16mm×16mm)Copper Pad Areas TL( 100 3.0 25 75 125 SK 52-SK 54 2.5 2.0 1.5 1.0 0.5 SK 55-SK 520 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.20 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) 0 20 40 60 80 100 0.001 Tj=25 Tj=75 100 1.0 0.1 0.01 SK 52-SK 56 SK 58-SK 520 Tj=75 SK 52-SK 54 SK 55-SK 56 SK 58-SK 510 SK 515-SK 520 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 150 120

H igh Diode Semiconductor Dimensions in inches and (millimeters) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.155(3.94) 0.130(3.30) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.44) 0.084(2.13) 4.26 1.8 SMB SMB

Reel Taping Specifications For Surface Mount Devices-SMB H igh Diode Semiconductor