SK2508 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (z-MOSV) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR AND DC-DC CONVERTER AND MOTOR Unit in mm
APPLICATIONS
© Low Drain-Source ON Resistance: RD§ (ON)=0.18 (Typ.) a3 =} Si e@ High Forward Transfer Admittance : |Yfs|=13S (Typ.) 2 | | | 2 e@ Low Leakage Current : Ipgg=100/A (Max.) (Vpg=250V) “ oO, I aa e@ Enhancement-Mode — : Vth=1.5~3.5V(Vpg=10V, Ip=1mA) | i 2 1 MAXIMUM RATINGS (Ta = 25°C) o7eeo tat ~ | CHARACTERISTIC SYMBOL UNIT |] 25##925 2.5420.25 Drain-Source Vollage Vpss_| 260 | Vl] 3 42 Drain-Gate Voltage (RG@g = 20k) VpGR g 2 2 Gate-Source Voltage Voss 4 @) |_Pulse | Ip | 52 | AH. source Drain Power Dissipation (Te=25°0) | Pp [45 | W |} Single Pulse Avalanche Energy** — Avalanche Curent IAL sC.61 Repetitive Avalanche Energy® | Ear [45 | mJ [TOSHIBA 2.10R1B Channel Temperature Weight : 1.9g Storage Temperature Range —55~150 THERMAL CHARACTERISTICS CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient Rth (ch-a) Note ; * Repetitive rating ; Pulse Width Limited by Max. junction temperature. ** Vpp=50V, Starting Tp, =25°C, L=1.48mH, RG=250, IAR=13A This transistor is an electrostatic sensitive device. Please handle with caution. 26100 1EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and. vulnerability to physical stress. it's the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook @ The information contained herein is presented only as a guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-12 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | svMBoL | _THSt CONDON |. |TV, [MAX [UNIT Cate Leakage Current Tasg__|Vag=216V, Vpg=0v L— |= [210 [aa Drain Cut-off Current Ipss Vps=250V, Vag=0V [| — | — | 100] pA | Drain-Source Breakdown _ _ ages Feaamimn vos [a —[- |» Gate Threshold Voltage Vps=10V, Ip=1mA [ 15[ — | 35] Vv | Drain-Source ON Resistance [Rpg (ON) |VGS=10V, Ip=6.5A [ — [018 | 025 [ 2 | Forward Transfer am ra pesimneess |e | [ [= [7800 [| Reverse Transfer Fema | em peciovoomscam [= [| | [= 00 | | a " Ip=6.5A 2p ee enl — lI Vv OUT 6s v1 - Be | [= Time é Fall Time te x 10 Vpp=130V . VIN : tr, te<5ns Turn-off Time toff Duty <1%, ty= 10s 70 Total Gate Charge (Gate- : Q . 40 Source Plus Gate-Drain) Vpp=200V, Vgg=10Vv, c Gate- Source Charge [stp =13A b=] Gate-Drain (“Miller”) Charge | — | 1] — | SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) cuanacranistic | svunou | test conpmmox [un [ 1, wax. [om Current Pulse Drain Reverse Current | Iprpp [| — | HT 2] A Diode Forward Voltage Vpsr_|Ipr=13A, Vgg=0V | — | — [-20[ v | Reverse Recovery Time Ipr=138A, Vgs=0V | — | 260 | — | as | Reverse Recovery Charge | Qs [dR /at=100A/ ys [= Tos T= oc] MARKING ra % Lot Number K2508: TYPE . [ i Month (Starting from Alphabet A) QUU Year (Last Number of the Christian Era) 1998-11-12 2/5
0 Ip - Vps ; 0 Ip - Vps
COMMON SOURCE | | ATSZ5<. Hf 8 COMMON SOURCE Te=25°C | Ws if; 5 Te=25°C 2 8 YY 2 16 —F s SeeeeD 28 coe! / | I e PoP ge 4 Ae eg - | get | e lf pj} ts | | e J. | gaye ts g | Ae zZ | LB a 2 GF Z iy Go | ce) A ee [Ay ty ett | ATi} i i} i tt Ai titi dy i tt | 0 of 0812-16-20 0 z 8 12 6 20 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vps (V) Ip - Vos Vps - Vas 20; 5 ee ee ¢ [FF soc] rs ee S EEL TTY [| vescev an eee RRR | FREER EE ~ as: ef Se TT 2 7 on eee ee) oe See eee | e [TAT TPP Pps | ti lTAi tit tf Ati titT iti tt | 0 2 4 6 8 10 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vas (V) l¥ts|_ - ID Rps (ON) ~ 1D g 50 Vps=10V 2 8 os} +>} Te=25°C ee ee 2 Ee B= ee Hl es ge | leer | MINN come ITI = te 00 ees # 5 pm se 5= 005) a pst ry a A Se re a a | s | TT tt titi 2 |_ LEM Ti $ 5 et TEI TTT) cok LT THIET ETAT 1 3 5 10 30 (50 100 1 3 5 10 30 «50 100 DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) 1998-11-12 3/5
os Rps(ON) — Te 30 IprR - Vps g pom Tyg fe TT BS os Y @ fe Af ze || I] [| wm 2st pe sz, ||] AT s ot ODAAFH 28 02 Yr nn 204) eee
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eof eA gL | | 2 (PTT TT tT Tt yy 2 EA 7oS STS oe a a os ee a a OD a a es CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) sono CAPACITANCE — Vps 5 Vth - Te eee | s TTL. iH SH Cis. COMMON SOURCE «woe LPS TTT TTT oie TTT
800 TT z Tf} 7] t ti tet ett
soo} TTI NETTTTTENT TT 5 3 2 sot LIM IT | Nic 2 PPP gf 22 88H TT Gee NCES e LITT TT tT | re] $50] common source ++} NEA & ri tt tee 30| Vos=0v TTA cr - , foes Coit as e OEE PEPE sgl Boe PTT TTT a 0.1 0305 1 3.5 #10 30 50 100 -80 -40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE Vpg (V) CASE TEMPERATURE Te (°C) Pp — Te DYNAMIC INPUT/OUTPUT 50 250 CHARACTERISTICS 25 s LLIT ITI IT TT I s LETT TJ conmos source > os wow tN IT 2 wot} | | | to=tea 0 oe Ne > Hae = s es ee 8 go st | tT TT tT tT 3 : P| PIN | Py yy [| [tl xwA Tl Ss ee oe is > Ae 5 e LTT) TXT TT TT a (tt gem ye se Ji tt PIN | tt 2 LY i | | tt |, &
3 Ne 3 tes tt g
a tit tT} IT | XI I pS 0 40 80 120 160 200 0 20 40 60 80 10( CASE TEMPERATURE Te (°C) TOTAL GATE CHARGE Qe (nC) 1998-11-12 4/5
rth — tw TT on oe ee oo epee 2 ane eee > a ae S34 Ersceg seovw ress ‘ $F sopectomlll | 1M COT TTT = FAs | a OPS a feet cid 1 pil = 10u 1004 im 10m 100m 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 00 Eas — Teh 100 so NTN_ NTT = 60 ee SSO] “KEP 2 Ip MAX. KN NI a \\ > Bier Ne] AREER 2 sof EN TH eT T TXT ET
3 NET ONTESTA g \\ ri
3.0] DC OPERATION \\} WI a 1 | | | NEL | I Zz Te= 25°C SLT AN Bos ll ENING PSS “SSE EE os 6075400125 180 0] # SINGLE NonRePerimive 74 —-H| CHANNEL TEMPERATURE Te, CO) PULSE Te=25°C COoTIN 95) Curves must be derated CENA oe ee increase in | [vos max, Bypss oy 3 10 30 100 300 16V IAR DRAIN-SOURCE VOLTAGE Vpg (V) _1V fl | / N ow i Yop /“ \\|__vps 4 \\ TEST CIRCUIT WAVE FORM =13A, Rg=250 1 -p.(—Bvpss_ voyeaey betas Eas=9-"l -l'- (Gypsg-Vpp) TOO AT 55