SK22 DSK | Alldatasheet
Document overview
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
o C ambient temperature unless otherwise specified SK24 SK25 SK26 SK28 SK29 SK210 SK24 SK25 SK26 SK28 SK29 SK210 Maximum repetitive peak reverse voltage V RRM 40 50 60 80 90 100 V Maximum RMS voltage V RMS 28 35 42 56 63 70 V Maximum DC blocking voltage V DC 40 50 60 80 90 100 V Maximum average forward rectified current at T L =90 I F(AV) A Peak forward surge current 8.3ms single half- sine-wave I FSM A Maximum instantaneous forward voltage at I FM =2.0A (NOTE1) V F V Maximum DC reverse current T J =25 at rated DC blocking voltage T J =100 Operating temperature range T J o C Storage temperature range T STG o C UNITS - 55 ---- +150 I R NOTE: 1.Pulse test: Pulse width 300us,duty cycle 1 % Maximum thermal resistance o C/W - 55 ---- +125 REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Low forward voltage Schottky barrier rectifier Guardring protection 0.50 0.5 20 m A R JL 0.70 2.0 0.85 20 30 Case: SMB molded plastic body 1111 SK23SK22 Device marking code SK22 SK23 Polarity: Color band denotes cathode end MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Mounting position: ANY (DO-214AA)SMB Weight: 0.003 ounces, 0.093 gram MECHANICAL DATA Reverse energy tested High current capability Extremely low thermal resistance SK22 - - - SK210 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
T C =25 .01 Tc=100 0.01 0.1 100 Tj=25 C Pulse Width=300 s 1% Duty Cycle o SK22-SK24 SK25~S K26 SK28~S K210 Resistive or inductive Load P.C.B.MOUNTED ON COPPERPAND AREAS 2.0 60 70 80 90 100 110 120 130 140 150 160 CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, LEAD TEMPERATURE SK22 - - - S K210 FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2-- PEAK FORWARD SURGE CURRENT 0 1 10 10 0 T L =100 C 8.3ms Si ngl e Hal f Si ne-W ave (JE D E C M ethod) O 1.0 www.diode.kr Diode Semiconductor Korea