KBJ4A DSK | Alldatasheet
Document overview
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Technical content
25± 0.3 15± 0.3 φ 3 .2 ± 0 .1 5 1.1± 0.2 7.5± 0.2 4.6± 0.15 3.7± 0.2 4.7± 0.2 9.5± 0.2 17.5± 0.5 2.8± 0.2 0.7± 0.1 1.2± 0.2
FEATURES
Surge overload rating to 150 Am peres peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. KBJ KBJ KBJ KBJ KBJ 4M UNITS Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Max imum DC bloc king v oltage V DC 200 400 600 800 1000 V Maximum average forw ard Output current @T A =100 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 2.0 A V F V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Typical junction capacitance per element C J pF Typical thermal resistance R θJC Operating junction temperature range T J Storage temperature range T STG KBJ KBJ 50 100 1.0 2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink. 1.0 A I F(AV) 4.0 A KBJ4A - - - KBJ4M SILICON BRIDGE RECTIFIERS 150.0 I FSM KBJ 4 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A Lead solderable per MIL-STD-202 method 208 Polarity:Symbols molded on body Mounting position: Any MECHANCAL DATA Weight:0.16 ounces, 4.45 grams NOTES:1.Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC - 55 ---- + 150 - 55 ---- + 150 I R 2.2 10.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
.01 0.1 1.0 1.6.2 1.4 100 .1 .2 .4 1.0 2 4 10 20 40 100 100 120 140 160 200 T J =25 f=1MHz 05 0 1 0 0 150 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 -- FORWARD DERATING CURVE FIG.1 -- PEAK FORWARD SURGE CURRENT FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL JUNCTION CAPACITANCE AMPERES JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, INST ANT ANEOUS FORWARD VOLT AGE, VOLT S REVERSE VOLT AGE,VOLT S KBJ4A - - - KBJ4M NUMBER OF CYCLES AT 60H Z AMBIENT T EMPERAT URE, 100 200 150 250 10 100 8.3ms Single Half Sine Wave T J =150 www.diode.kr Diode Semiconductor Korea