SK2331A SKTECHNOLGY | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Features
Extremely low threshold voltage Advanced trench cell design
Applications
Channel Enhancement Mode MOSFET BV 20 V P tot 1.25 W D 4.3 A Extremely low threshold voltage Advanced trench cell design Channel Enhancement Mode MOSFET 20 V 1.25 W 4.3 A mounted package Extremely low threshold voltage Advanced trench cell design Portable appliances Pin Description Channel Enhancement Mode MOSFET DS(ON)
- R DS(ON)
- R DS(ON) mounted package Extremely low threshold voltage Advanced trench cell design Channel Enhancement Mode MOSFET DS(ON) 45 mΩ @ V DS(ON) 55 mΩ @ V DS(ON) 75 mΩ @ V Channel Enhancement Mode MOSFET 45 mΩ @ V GS = - 55 mΩ @ V GS 75 mΩ @ V GS 4.5 V 2.5 V 1.8 V SK2331A 1 of 6 REV.08
- Surface Mounted on 1 Limiting Values * Surface Mounted on 1 * Surface Mounted on 1 in pad area, t pad area, t 10 sec Pulse width Pulse width 300 s, duty cycle s, duty cycle 2 % SK2331A 2 of 6 REV.08
Electrical Characteristics
Notes： a : Pulse test ; pulse width a : Pulse test ; pulse width ( T a : Pulse test ; pulse width 300 ( T A = 25 °C Unless Otherwise Noted ) duty cycle = 25 °C Unless Otherwise Noted ) 2 % b : Guaranteed by design, not subject to production testing = 25 °C Unless Otherwise Noted ) b : Guaranteed by design, not subject to production testing = 25 °C Unless Otherwise Noted ) b : Guaranteed by design, not subject to production testing b : Guaranteed by design, not subject to production testing b : Guaranteed by design, not subject to production testing b : Guaranteed by design, not subject to production testing SK2331A 3 of 6 REV.08
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