SK12N65B-T SKTECHNOLGY | Alldatasheet

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Technical content

RDS(ON),typ.=0.60 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode

Applications

Ordering Information

Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Unit V DSS Drain to Source Voltage V V GSS Gate to Source Voltage I D C ontinuous Drain Current A I DM Pulsed Drain Current at V GS =10V E A S Single Pulse Avalanche Energy 450 mJ P D Power Dissipation 125 W Derating Factor above 25 0.58 T L Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 T J & T STG Operating and Storage Temperature Range 55 to 1 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter Unit R θJC Thermal Resistance, Junction to Case 1.0 R θJA Thermal Resistance, Junction to Ambient 100 BVDSS RDS(ON),typ. ID 650V 0.60Ω 12A TO-220 TO-220F Package No to Scale G D S S G D SK12N65B-T/TF PART NUMBE PACKAGE SK12N65B-T SK12N65B-TF TO-220 TO-220F 1 of 9 REV.08 SK12N65B-T SK12N65B-TF SK12N65B-T SK12N65B-TF

Electrical Characteristics

OFF Characteristics TJ =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions BVDSS Drain-to-Source Breakdown Voltage 650 -- -- V VGS=0V, ID=250uA IDSS Drain-to-Source Leakage Current -- -- 1 uA VDS=650V, VGS=0V -- -- 100 VDS=520V, VGS=0V, TJ =125℃ IGSS Gate-to-Source Leakage Current -- -- +100 nA VGS=+30V, VDS=0V -- -- -100 VGS=-30V, VDS=0V ON Characteristics TJ =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions RDS(ON) Static Drain-to-Source On-Resistance -- 0.60 0.75 Ω VGS=10V, ID=6.0A VGS(TH) Gate Threshold Voltage 2.0 -- 4.0 V VDS=VGS, ID=250uA gfs Forward Transconductance -- 5.2 -- S VDS=15V,ID=6.0A Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions Ciss Input Capacitance -- 1900 -- pF VGS=0V, VDS=25V, f=1.0MHZ Crss Reverse Transfer Capacitance -- 33 -- Coss Output Capacitance -- 150 -- Qg Total Gate Charge -- 52 -- nC VDD=480V, ID=12A, VGS=0 to 10V Qgs Gate-to-Source Charge -- 9 -- Qgd Gate-to-Drain (Miller) Charge -- 20 -- Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions td(ON) Turn-on Delay Time -- 25 -- nS VDD=300V, ID=12A, VGS=10V Rg=25Ω trise Rise Time -- 40 -- td(OFF) Turn-Off Delay Time -- 150 -- tfall Fall Time -- 60 -- SK12N65B-T/TF 2 of 9 REV.08

Source-Drain Body Diode Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Min Typ. Max. Unit Test Conditions ISD Continuous Source Current[2] -- -- 12 A Integral pn-diode in MOSFET ISM Pulsed Source Current[2] -- -- 48 VSD Diode Forward Voltage -- -- 1.4 V IS=12A, VGS=0V trr Reverse Recovery Time -- 420 -- ns VGS=0V IF= IS, di/dt=100A/μs Qrr Reverse Recovery Charge -- 6.0 -- uC Note: [2] Pulse width≤380µs; duty cycle≤2%. SK12N65B-T/TF 3 of 9 REV.08

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Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms SK12N65B-T/TF 6 of 9 REV.08

(Cont.) SK12N65B-T/TF 7 of 9 REV.08

(mm) MIN MAX A 10.1 10.5 B 15.2 15.6 B 9.00 9.40 C 4.40 4.60 C1 2.40 3.00 D 1.20 1.40 E 0.70 0.90 F 0.40 0.60 G 1.17 1.37 H 3.30 3.80 L 13.1 13.7 N 2.34 2.74 Q 2.40 3.00 3.70 3.90 TO-220 PACKAGE OUTLINE Unit 8 of 9 REV.08 SK12N65B-T/TF

REV.08 (mm) MIN MAX A 9.70 10.30 B 15.50 16.10 8.99 9.39 C 4.40 4.80 C1 2.15 2.55 D 2.50 2.90 E 0.70 0.90 F 0.40 0.60 G 1.12 1.42 H 3.40 3.80 L 12.6 13.6 N 2.34 2.74 Q 3.15 3.55 3.00 3.30 TO-220F PACKAGE OUTLINE Unit SK12N65B-T/TF