SK12B DSK | Alldatasheet
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
o C ambient temperature unless otherwise specified SK14B SK15B SK16B SK18B SK19 B SK110B SK14B SK15B SK16B SK18B SK19 B SK110B Maximum repetitive peak reverse voltage V RRM 40 50 60 80 90 100 V Maximum RMS voltage V RWS 28 35 42 56 63 70 V Maximum DC blocking voltage V DC 40 50 60 80 90 100 V Maximum average forward rectified current at T L =90 I F(AV) A Peak forward surge current 8.3ms single half- sine-wave I FSM A Maximum instantaneous forward voltage at I FM =1.0A (NOTE1) V F V Maximum DC reverse current T J =25 at rated DC blocking voltage T J =100 Operating temperature range T J o C Storage temperature range T STG o C UNITS -55 ---- +150 I R NOTE: 1.Pulse test: Pulse width 300us,duty cycle 1 % Maximum thermal resistance o C/W -55 ---- +125 REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 1.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Low forward voltage Schottky barrier rectifier Guardring protection 0.50 0.5 20 m A R JL 0.70 1.0 0.85 30.0 20 30 Case: SMB molded plastic body 1111 SK13BSK12B Device marking code SK12B SK13B Polarity: Color band denotes cathode end MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Mounting position: ANY SMB Weight: 0.003 ounces, 0.093 gram MECHANICAL DATA Reverse energy tested High current capability Extremely low thermal resistance SK12B---SK110B Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
0.001 0.01 0.1 200 4 0 60 80 100 T J =125 C T J =75 C T J =25 C CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICRO AMPERES NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, LEAD TEMPERATURE SK12B---SK110B FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2-- PEAK FORWARD SURGE CURRENT 0.5 Resistive or inductive Load P.C.B.MOUNTED ON 0.2X0.2(5.0X5.0mm) COPPERPAD AREAS 1.0 60 70 80 90 100 110 120 130 140 150 160 170 0 1 10 10 0 T L =100 C 8.3ms Si ngl e Hal f Si ne-W ave (JE D E C M ethod) O 0.01 0.1 SK15B-SK16B Puise Width=300 S 1%DUTY CYCLE 1.4 SK12B-SK14B SK18B-S110B 1.6 www.diode.kr Diode Semiconductor Korea