2SK1119 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (7r-MOSII-5) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Dc-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm © Low Drain-Source ON Resistance: Rpg (QN)=3.000 (Typ.) aE e@ High Forward Transfer Admittance : |Yf.|=2.0S (Typ.) Esa 5 x © Low Leakage Current : Ipgg=300/A (Max.) (Vpg=800V) 3 Li ‘i e@ Enhancement-Mode = : Vth=1.5~3.5V (Vpg=10V, Ip=1mA) “I s| | MAXIMUM RATINGS (Ta = 25°C) 1. SMAX. i & 0.76 = CHARACTERISTIC SYMBOL | RATING ! 2.54 254 Drain-Source Voltage Vpss_[ 1000 7 Vd io rT Drain-Gate Voltage (RGg=20k0) VpGR 1000 Bi lara E Gate Souree Voltage Voss alg [4 | Drain Current | A [100 | WS Source Drain Power Dissipation (Te=25°C) [ Pp | 100 WwW 3. source Channel Temperature Storage Temperature Range —55~150 JEDEC __TO0-220AB EIAJ SC-46 TOSHIBA 2-10P1B THERMAL CHARACTERISTICS = Weight : 2.0g (Typ.) Thermal Resistance, Channel to Case Rth (ch-c Thermal Resistance, Channel to Ambient __| Rth(ch-a) |_83.3 [°C/W] This transistor is an electrostatic sensitive device. Please handle with caution. 26100142 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fil due to theit inherent electrical sensitivity and. vulnerability to physical stres, it isthe responsiblity of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. © The information contained herein is presented only asa. guide, for the applications of ur products. No responsiblity is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-07-24 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [ xan. | rye. Jax. [unr] Cate Leakage Current Vag 200V, Vpg=0v L= = [2 i00| an] Drain Cutoff Current | Ipgg | Vpg=800V, Vgg=0V P= p= | 300] A] Drain-Source Breakdown Voltage V (BR) Dss|Ip=10mA, Vag=0V [2000 [ — [| -| v | Gate Threshold Voltage Vps=10V, Ip=1mA [ 15[ — | 35] Vv | Drain-Source ON Resistance | RDS (ON) | VGg=10V, Ip=2A | — | 30] 38/ 2 | Forward Transfer ba pomeannetn [vol wf [8 Input Capacitance L— | 70} — | Reverse Transfer vnc anno [= [= | Output Capacitance [= ee ms Ip=2A tov v |- | | - | Ves ov lL OUT = 2 ce Time S = = ace : VIN : ty ty<5ns, VDD=400V -" Turn-off Time | toff Duty <1%, tw=10ps Total Gate Charge (Gate- Q Source Plus Gate-Drain) 8 Vin 400V, Vae=10V, In=6A c Gate-Source Charge LQ | VDD400¥, Vas=10V, Ip=6A a5] Gate-Drain Mille) Change P= SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) cuanactenisnc —[svunoz | test coxpmion [win [1¥, [wax [uN] A Current Diode Forward Voltage Vpsr_lipa=4A, Vag=0v P= T= Eis MARKING cm % Lot Number K1119 TYPE . ao Month (Starting from Alphabet A) UU Year (Last Number of the Christian Era) 1998-07-24 2/5
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VYVELI TI TTT itt) So 0 4 8 12 16 20 24 0 40 80 120 160 200 240 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) Ip - Ves Vps - Vas i e FORT ees | ee, COWELL en CE | teeaee 2 | {4 200 e [ite on eee ge Litt ifyt i i 2 “CONCEP eT) LLU LLLL 2d ee Z LEVEE es PORE TT er ye PHY 5 DONS Li TAs] it PF CEP eye ye Try 0 2 4 6 8 10 0 4 8 12 16 20 24 GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) lYts| — ID 0 Rps (ON) - ID 19 eo AT comnon PE eg a 5 ri eect Se CEE _ ee Hill = alll Pees oe a beet aa 3 BE Z og___L_L TTT TT TTT) 1 01 03 05 1 3 5 10 05 1 3 5 10 DRAIN CURRENT Ip (A) DRAIN CURRENT Ip (A) 4998-07-24 3/5
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FA ANS Ge 3g B09)" Noneepermve — [| XN | DN me TTT 0 20 40 60 80 100 oa derated linearly with | TOTAL GATE CHARGE Qg (nC) 08 temperatore. =voss max. “3 5 10 30 50 100 300.500 1000 DRAIN-SOURCE VOLTAGE Vpg (V) 1998-07-24 5/5