SK04N65B SKTECHNOLGY | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

RDS(ON),typ.=2.3 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode

Applications

Ordering Information

Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter SK04N65B Unit VDSS Drain-to-Source Voltage 650 V VGSS Gate-to-Source Voltage ±30 ID Continuous Drain Current 4.0 A IDM Pulsed Drain Current at V GS=10V 16 EAS Single Pulse Avalanche Energy 250 mJ PD Power Dissipation 86 W Derating Factor above 25℃ 0.68 W/℃ TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter Unit RθJC Thermal Resistance, Junction-to-Case 1.45 RθJA Thermal Resistance, Junction-to-Ambient 75 BVDSS R DS(ON),typ. I D 650V 2.3Ω 4.0A SK04N65B SK04N65B REV.08 1 of 8

Electrical Characteristics

OFF Characteristics TJ =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions BVDSS Drain-to-Source Breakdown Voltage 650 -- -- V V GS=0V, ID=250uA IDSS Drain-to-Source Leakage Current -- -- 1 uA VDS=650V, VGS=0V -- -- 100 VDS=520V, VGS=0V, TJ =125℃ IGSS Gate-to-Source Leakage Current -- -- +10 uA VGS=+20V, VDS=0V -- -- -10 V GS=-20V, VDS=0V ON Characteristics TJ =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions RDS(ON) Static Drain-to-Source On-Resistance -- 2.3 2.6 Ω V GS=10V, ID=2.0A VGS(TH) Gate Threshold Voltage 2.0 -- 4.0 V V DS=VGS, ID=250uA gfs Forward Transconductance -- 5.0 -- S V DS=15V,ID=2.0A Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions Ciss Input Capacitance -- 450 -- pF VGS=0V, VDS=25V, f=1.0MHZ Crss Reverse Transfer Capacitance -- 6.0 -- Coss Output Capacitance -- 50 -- Qg Total Gate Charge -- 8.5 -- nC VDD=325V, ID=4A, VGS=0 to 10V Qgs Gate-to-Source Charge -- 2.8 -- Qgd Gate-to-Drain (Miller) Charge -- 2.5 -- Resistive Switching Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions td(ON) Turn-on Delay Time -- 9.0 -- nS VDD=325V, ID=4A, VGS=10V Rg=4.7Ω trise Rise Time -- 7.0 -- td(OFF) Turn-Off Delay Time -- 22 -- tfall Fall Time -- 9.0 -- REV.08 2 of 8 SK04N65B

Source-Drain Body Diode Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Min Typ. Max. Unit Test Conditions ISD Continuous Source Current [2] -- -- 4.0 A Integral pn-diode in MOSFET ISM Pulsed Source Current[2] -- -- 16 VSD Diode Forward Voltage -- -- 1.5 V I S=4A, VGS=0V trr Reverse Recovery Time -- 235 -- ns VGS=0V IF= IS, di/dt=100A/µs Qrr Reverse Recovery Charge -- 750 -- nC REV.08 3 of 8 SK04N65B

REV.08 4 of 8 SK04N65B

Typical Characteristics(Cont.) REV.08 5 of 8 SK04N65B

REV.08 6 of 8 SK04N65B

TestTest TestTest CircuitsCircuits CircuitsCircuits andand andand WaveformsWaveformsWaveformsWaveforms Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms REV.08 7 of 8 SK04N65B

TestTest TestTest CircuitsCircuits CircuitsCircuits andand andand WaveformsWaveformsWaveformsWaveforms (Cont.) REV.08 8 of 8 SK04N65B