SFT1445 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • ON-resistance R DS(on)1=85mΩ(typ.) • Input Capacitance Ciss=1030pF(typ.)
  • 4V drive • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 17 A Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 68 A Allowable Power Dissipation PD 1.0 W Tc=25°C3 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-004 7003-004 D2210PA TKIM TC-00002529 SANYO Semiconductors DATA SHEET SFT1445 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information Product & Package Information Electrical Connection

  • Package : TP • Package : TP-FA
  • JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK • JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK
  • Minimum Packing Quantity : 500 pcs./bag • Minimum Packing Quantity : 700 pcs./reel Marking(TP , TP-FA) Packing Type(TP-FA) : TL T1445 LOT No. 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA TL 2,4

No. A1897-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 100 V Zero-Gate Voltage Drain Current I DSS V DS=100V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=8.5A 8.9 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=8.5A, VGS=10V 85 111 mΩ RDS(on)2 I D=4A, VGS=4.5V 90 126 mΩ RDS(on)3 I D=4A, VGS=4V 93 130 mΩ Input Capacitance Ciss V DS=20V, f=1MHz 1030 pF Output Capacitance Coss V DS=20V, f=1MHz 78 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 42 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 10 ns Rise Time tr See speci fi ed Test Circuit. 35 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 60 ns Fall Time tf See specifi ed Test Circuit. 60 ns Total Gate Charge Qg V DS=50V, VGS=10V, ID=17A 19 nC Gate-to-Source Charge Qgs V DS=50V, VGS=10V, ID=17A 3.6 nC Gate-to-Drain “Miller” Charge Qgd V DS=50V, VGS=10V, ID=17A 3.8 nC Diode Forward Voltage VSD IS=17A, VGS=0V 0.96 1.2 V Switching Time Test Circuit PW=10μs D.C.≤1% P. G 50Ω G S D ID=8.5A RL=5.9Ω VDD=50V VOUT VIN 10V VIN SFT1445 ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A IT16190 VDS=10V °CTc=75 °C --25 IT16189 VGS=2.5V 3.0V 10.0V 4.0V 16.0V 3.5V4.5V 6.0V 8.0V Tc=25°C

No. A1897-3/4 | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc SW Time -- ID Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IS -- VSD VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 100 10000 1.0 1000 100 0 100 907030 50 80 602010 40 IT16196 IT16194IT16193 0.001 0.1 1.0 100 0.01 1.0 0.1 100 0.1 23 5 7 1.0 23 1005723 1057 Tc= --25 75°C 25°C Tc=75 --25 VGS=0V f=1MHz Coss Ciss Crss IT16195 0.1 23 5 7 1.0 23 5 7 10 23 5 7 100 td(off) tf td(on) tr VDD=50V VGS=10V 1000 IT16192 --60 --40 --20 160 0 20 40 60 80 100 120 140 200 100 180 160 140 120 IT16198IT16197 0246 1 2 1082 0 16 1814 VDS=10V 0.01 0.1 1.0 0.1 1.023 5 7 2 10 10035 7 2 3 7 5 100 IDP=68A (PW≤10μs) ID=17A Operation in this area is limited by RDS(on). 10μs100μs1ms 10ms 100ms DC operation VGS =4.0V , I D=4.0A VGS =10.0V , I D=8.5A VGS =4.5V , I D=4.0A 200 120 180 160 140 100 0 6 10 14 1624 8 1 2 IT16191 ID=4.0A Tc=25°C 8.5A VDS=50V ID=17A Tc=25°C Single pulse

No. A1897-4/4PS This catalog provides information as of December, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the SFT1445 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. IT16199 0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT16200 0 20 40 60 80 100 120 140 160