SFT1431 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Motor drive application.
  • Low ON-resistance.
  • 4V drive. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 11 A Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 44 A Allowable Power Dissipation PD 1.0 W Tc=25°C1 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 35 V Zero-Gate Voltage Drain Current IDSS V DS=35V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=5.5A 5S Static Drain-to-Source On-State Resistance RDS(on)1 I D=5.5A, VGS=10V 19 25 mΩ RDS(on)2 I D=3A, VGS=4.5V 28 39.5 mΩ RDS(on)3 I D=3A, VGS=4V 35 49 mΩ Marking : T1431 Continued on next page. D0209PA TK IM TC-00002143 SANYO Semiconductors DATA SHEET SFT1431 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1624-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Input Capacitance Ciss V DS=20V, f=1MHz 960 pF Output Capacitance Coss V DS=20V, f=1MHz 130 pF Reverse Transfer Capacitance Crss V DS=20V, f=1MHz 84 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 12 ns Rise Time tr See speci fi ed Test Circuit. 40 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 60 ns Fall Time tf See specifi ed Test Circuit. 36 ns Total Gate Charge Qg V DS=20V, VGS=10V, ID=11A 17.3 nC Gate-to-Source Charge Qgs V DS=20V, VGS=10V, ID=11A 3.2 nC Gate-to-Drain “Miller” Charge Qgd V DS=20V, VGS=10V, ID=11A 3.6 nC Diode Forward Voltage VSD IS=11A, VGS=0V 0.88 1.2 V Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-004 7003-004 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA PW=10μs D.C.≤1% P. G 50Ω G S D ID=5.5A RL=2.7Ω VDD=15V VOUT VIN 10V VIN SFT1431

No. A1624-3/4 | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc ID -- VDS ID -- VGS SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IS -- VSD 100 1000 100 1 2468 1 6 1412103579 1 5 1311 IT15241 03 5 30252051 0 1 5 IT15246 IT15244IT15243 0.001 0.1 1.0 0.01 1.0 1.00.1 23 5 7 23 23 1057 Tc= --25 75°C 25°C VDS=10V Tc=75 --25 f=1MHz Coss Ciss Crss IT15245 0.1 2323 5 7 1.0 23 5 7 10 td(off) tf td(on) tr VDD=15V VGS=10V ID=5.5A --25 °CTc=75 IT15240 VDS=10V Single pulse 25°C IT15239 VGS=3.0V 16.0V 10.0V IT15242 --50 --25 150 0 25 50 75 100 125 VGS=4.5V , ID=3.0A VGS=10.0V , ID=5.5A VGS=4.0, ID=3.0A Tc=25°C Single pulse Single pulseTc=25°C Single pulse VGS=0V Single pulse

No. A1624-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of December, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the SFT1431 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W 0 20 40 60 80 100 120 140 160 IT15249 0.2 0.4 1.0 1.2 0.8 0.6 PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT15250 0 20 40 60 80 100 120 140 160 IT15248IT15247 0246 1 2 10 16 1481 8 0.1 1.0 0.1 IDP=44A ID=11A 100 μs1ms10ms 100msDC operation Operation in this area is limited by RDS(on). 1.023 5 7 2 1035 7 2 3 7 5 100 VDS=20V ID=11A PW≤10μs Tc=25°C Single pulse