SFT1403 SANYO | Alldatasheet
Document overview
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Technical content
Features
- Motor drive application.
- Low ON-resistance.
- 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 35 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 14 A Drain Current (PW≤10µs) I DP PW ≤10µs, duty cycle≤1% 56 A Allowable Power Dissipation P D 1.0 W Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 35 V Zero-Gate Voltage Drain Current I DSS VDS =35V, VGS =0V 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =7A 6.6 11 S R DS (on)1 I D =7A, VGS =10V 17 23 m ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =7A, VGS =4V 25 35 m Ω Marking : T1403 Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 41807PA TI IM TC-00000594 SANYO Semiconductors DATA SHEET SFT1403 N-Channel Silicon MOSFET General-Purpose Switching Device
Applications
No. A0786-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =20V, f=1MHz 2230 pF Output Capacitance Coss V DS =20V, f=1MHz 305 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 225 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 21 ns Rise Time t r See specified Test Circuit. 110 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 140 ns Fall Time t f See specified Test Circuit. 100 ns Total Gate Charge Qg V DS =20V, VGS =10V, ID =14A 39 nC Gate-to-Source Charge Qgs V DS =20V, VGS =10V, ID =14A 7.7 nC Gate-to-Drain “Miller” Charge Qgd V DS =20V, VGS =10V, ID =14A 7.2 nC Diode Forward Voltage V SD IS=14A, VGS =0V 0.92 1.2 V Package Dimensions Package Dimensions unit : mm (typ) unit : mm(typ) 7518-004 7003-004 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP PW=10 µs D.C.≤1% P. G 50Ω G S D ID =7A R L=2.86Ω VDD =20V VOUT SFT1403 VIN 10V VIN 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
No. A0786-3/4 R DS (on) -- VGS R DS (on) -- Ta IS -- VSDyfs -- ID SW Time -- ID Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Ambient Temperature, Ta -- °CGate-to-Source V oltage, VGS -- V Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A 100 1000 100 --60 --40 --20 0 20 4 06 08 0 1 0 0 120 140 160 2 3579 1 6 11 13468 1 0 1 21 4 1 5 03 5 10 20 15 25 305 0.001 0.01 0.1 1.0 1.0 1.00.1 23 5 7 2 1032 3 57 Ta=25°C ID =7A V GS =4V , ID=7A Ta= --25 75°C 25°C V DS =10V Ta=75 --25 V GS =0V f=1MHz Coss Ciss Crss 100.1 23 23 5723 5 7 1.0 td(off) tf td(on) tr V DD =20V V GS =10V IT12353 IT12354 IT12358 IT12356IT12355 IT12357 IT12351 IT12352 V GS =2.5V 3.0V 16.0V V DS =10V --25 Ta=75 10.0V 8.0V 3.5V V GS =10V , ID =7A 4.0V 3.3V6.0V Ciss, Coss, Crss -- VDS
No. A0786-4/4PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Note on usage : Since the SFT1403 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice. VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source V oltage, VDS -- V A S O Drain Current, ID -- A PD -- Tc Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W IT12361IT12349 IT12360IT12359 05 1 0 15 20 40 25 30 35 V DS =20V ID =14A 02 0 4 0 6 0 8 0 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 1.023 7 2 5 1037 2 5 1.0 0.1 0.1 1ms 100ms 10ms IDP =56A ID =14A 100 µs DC operation 02 0 4 0 6 0 8 0 100 120 140 160 Operation in this area is limited by RDS (on). 37 5 100 Tc=25°C Single pulse 10µs No heat sink