SFT1327

SFT1327 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance.
• 4V drive. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -80 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -4.5 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% - -18 A Allowable Power Dissipation P D 1.0 W Tc=25°C1 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -80 V Zero-Gate Voltage Drain Current I DSS V DS=- -80V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -2.3A 3.4 5.7 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -2.3A, VGS=- -10V 137 178 mΩ RDS(on)2 I D=- -2.3A, VGS=- -4.5V 162 227 mΩ RDS(on)3 I D=- -2.3A, VGS=- -4V 171 239 mΩ Marking : T1327 Continued on next page. O1409PA TK IM TC-00002083 SANYO Semiconductors DATA SHEET SFT1327 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1571-2/4 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Input Capacitance Ciss V DS=- -20V, f=1MHz 1110 pF Output Capacitance Coss V DS=- -20V, f=1MHz 75 pF Reverse Transfer Capacitance Crss V DS=- -20V, f=1MHz 55 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 12 ns Rise Time tr See speci fi ed Test Circuit. 89 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 112 ns Fall Time tf See specifi ed Test Circuit. 45 ns Total Gate Charge Qg V DS=- -40V, VGS=- -10V, ID=- -4.5A 19.7 nC Gate-to-Source Charge Qgs V DS=- -40V, VGS=- -10V, ID=- -4.5A 2.9 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -40V, VGS=- -10V, ID=- -4.5A 2.9 nC Diode Forward Voltage VSD IS=- -4.5A, VGS=0V - -0.86 - -1.2 V Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-004 7003-004 Switching Time Test Circuit 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA PW=10μs D.C.≤1% P. G 50Ω G S D ID= --2.3A RL=17.4Ω VDD= --40V VOUT VIN --10V VIN SFT1327

No. A1571-3/4 IS -- VSD Drain Current, ID -- A Diode Forward V oltage, VSD -- V SW Time -- ID Ciss, Coss, Crss -- VDS Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V RDS(on) -- VGS RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C Source Current, IS -- A ID -- VDS ID -- VGS Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V | yfs | -- ID Forward Transfer Admittance, | yfs | -- S IT15082 IT15083 IT15084 IT15085 --60 --40 --20 0 20 40 60 80 100 140 120 160 --3.5 --3.0 --4.0 --4.5 --2.5 --2.0 --1.5 --1.0 --0.5 --8 --7 --9 --6 --5 --4 --3 --2 --1 --3.5V --16.0V VGS= --2.5V IT15087 --0.01 --0.1 --1.0 IT15086 --25 Ta=75 1.0 0.1 VDS= --10V Ta= --25 75°C VGS=0V Ta= --25 Ta=75 --25 --6 300 250 200 150 100 400 350 300 200 250 150 100 Ta=25°C ID= --2.3A VGS = --4.0V , I D= --2.3A IT15088 100 VDD= --40V VGS= --10V td(off) tr td(on) 100 1000 IT15089 f=1MHz Ciss Coss Crss 25°C tf --3.0V--10.0V VGS = --4.5V , I D= --2.3A VGS= --10.0V , ID= --2.3A VDS= --10V --4.0V--6.0V --4.5V

No. A1571-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2009. Specifi cations and information herein are subject to change without notice. Note on usage : Since the SFT1327 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W 0 20 40 60 80 100 120 140 160 IT12349 0.2 0.4 1.0 1.2 0.8 0.6 No heat sink PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT15091 --0.1 --1.0 --0.1 10μs100 μs100ms10ms 1ms DC operation --1.0 --10 --10023 5 7 23 5 7 7 23 5 2 --10 Operation in this area is limited by RDS(on). ID= --4.5A IT15090 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 VDS= --40V ID= --4.5A 04 2 0 18161412826 1 0 IDP= --18A IT12350 0 20 40 60 80 100 120 140 160 PW≤10μs Tc=25°C Single pulse