SFT1101 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Adoption of FBET, MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO - -120 V Collector-to-Emitter Voltage V CES - -120 V Collector-to-Emitter Voltage V CEO - -120 V Emitter-to-Base Voltage V EBO -- 7 V Collector Current I C - -2.5 A Collector Current (Pulse) I CP -- 4 A Base Current I B - -500 mA Collector Dissipation P C Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Marking : T1101 SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73008EA TI IM TC00001472 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SFT1101 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

No. A1166-2/4 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=- -80V, IE=0A - -1 μA Emitter Cutoff Current I EBO VEB=- -5V, IC=0A - -1 μA DC Current Gain h FE VCE=- -5V, IC=- -100mA 200 560 Gain-Bandwidth Product f T VCE=- -10V, IC=- -100mA 75 MHz Output Capacitance Cob V CB=- -10V, f=1MHz 21 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=- -1A, IB=- -100mA - -150 - -270 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=- -1A, IB=- -100mA - -0.85 - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=- -10μA, IE=0A - -120 V Collector-to-Emitter Breakdown Voltage V (BR)CES IC=- -100μA, RBE=0Ω - -120 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=- -1mA, RBE=∞ - -120 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -10μA, IC=0A - -7 V Turn-ON Time t on See specified Test Circuit. 55 ns Storage Time t stg See specified Test Circuit. 840 ns Fall Time t f See specified Test Circuit. 40 ns Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-003 7003-003 Switching Time Test Circuit VR RL VCC= - -60VVBE=5V IC= - -10IB1=10IB2= - -0.7A ++50Ω INPUT OUTPUT RB 220μF 470 μF PW=20μs IB1 IB2D.C.≤1% 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA

No. A1166-3/4 Cob -- VCB VBE(sat) -- ICVCE(sat) -- IC hFE -- ICIC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V fT -- IC --1.0 --0.1 Ta= --25°C 75°C 23 5 23 5 27 --1.035 7--0.01 IC / IB=10 IT13517 25°C --0.1 --0.01 Ta=75 25°C --25°C IT13516 IC / IB=10 100 IT13515 100 IT13514 VCE= --10V f=1MHz Ta=75°C --25°C VCE= --5VVCE= --5V IT13513 100 1000 Ta=75 --25 --3.0 --2.0 --1.0 --2.5 --1.5 --0.5 IT13512 25°C IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector-to-Emitter V oltage, V CE -- V Collector Current, IC -- A IC -- VCE Collector Current, IC -- A --5mA --500mA --2.5 --2.0 --1.5 --1.0 --0.5 IB=0mA IT13510 --2.5 --2.0 --1.5 --1.0 --0.5 --1mA --20mA --40mA --60mA --80mA --500mA --120mA --2mA IB=0mA IT13511 --10mA --5mA --250mA --200mA --160mA --120mA --10mA --20mA --40mA --60mA --80mA --160mA --200mA --250mA --100mA --100mA

No. A1166-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS PC -- Tc Collector Dissipation, PC -- W Case Temperature, Tc -- °CIT13553 20 40 0.6 1.0 1.2 0.4 0.2 0.8 60 80 100 120 140 160 2006 0 40 80 100 140 120 160 IT13554 Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V A S O PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V A S O --0.1 --1.0 --0.01 IC= --2.5A 10ms100ms 1ms ICP= --4A IT13566 100 μs 500 μsDC operation --0.1 --1.0 --0.01 IC= --2.5A 1ms ICP= --4A IT13567 100 μs 500 μs DC operation 100ms 10ms Ta=25°C Single pulse <10μs <10μs Tc=25°C Single pulse This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice.