SFH6106 SIEMENS | Alldatasheet
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STEMENS AKTIENGESELLSCHAF 47E D Ml 8235605 0027317 2 MMSIEG -4|-83 2.8 kV TRIOS’® OPTOCOUPLERS HIGH RELIABILITY Package Dimensions mm. $5. 508 63 | te 0,35, 0,55 SARS 0,25" 0.45 a . 1b 0 eee] ? J ‘ 4035max al Le 7 ee 256 a = . lead spacing ~ 1 4% Anode =1 4-Emitter 2q [k3 Cathode-2 3-Collector ge i FEATURES DESCRIPTION és * Isolation Test Voltage: 2800 V The optically coupled isolator SFH 6106 features a high current © High Current Transfer Ratios transfer ratio, low coupling capacitance, and high isolation voltage. As at 10 mA: 40-320% emitter it employs a GaAs infrared emitting diode which is optically at 1 mA: 13-90% coupled with a silicon planar phototransistor acting as detector. * Short Switching Times The component is incorporated in a plastic plug-in DIP-4 package. © Minor CTR Degradation The bent terminal pins are suitable for surface mounting (SMD). © 100% Burn-in The coupling device permits to transfer signals between two ' electrically oslated circuits. The potential difference between the * Fieid-Effect Stable by TRIOS Circuits to be coupled is not allowed to exceed the maximum * Temperature Stable permissible reference voltages * Good CTR Linearity Depending on Forward Current * High Collector-Emitter Voltage Voeo=70 V “TRansparent 1On Shield * Low Saturation Voltage * Low Coupling Capacitance * High Common-Mode Interference Immunity * UL Approval #52744 5-153
STEMENS AKTIENGESELLSCHAF 47E D MM 8235605 0027318 4 MMSIEG Maximum Ratings Linear Operation (without saturation) Emitter (GaAs LED) 1 ReverseVollage em a Ree sy DcForward Curent. =. . . 60 mA Tot Mor Surge Forward Current (Is10 ys)... woe 258 © Total Power Dissipation 100 mW —F Datactar (Silicon Phototransistor) ——s Collector-Ermitter Voltage . 70V Collector Current . ~ -5OmA 501 I.=10 MA, Vo.=5 V, T,=25°C Collector Current (t <1 ms) . oe oe 100 mA ia my oF A Total Power Dissipaton © 2 wes see oe» $50 mW Load Resistance R a Storage Temperature Range fee “55°C to +150°C Ambient Temperature Range. : . “55°C to + 100°C Rise Time fe Lad Junction Temperature .. Sees 100° Tymont time be a Soldenng Temperature (max 10s)". ... : co 260°C Isolation Test Voltage? Fall Time b ps (between emitter and detector relerred Cut-Off Frequency Fo | 20 «|e Isolation Resistance (V,,=500 V) we 100 Notes: ‘Switching Operation (with saturation)
1 Not for wave-soldenng
- DG tee! votage m accordance wath VDE 0883/8 80 lk 1a — Von = 5V or 2 TTL inputs 2 with a 27 kQ Characteristics (T,=25°C) pull-up resistor Emitter (GaAs LED) Forward Voltage (|,=60 mA) v, 125(s165) VV «sv Breakdown Voltage (|,= 100 WA) Von 30 (26) v Reverse Current (V,=6 V) I 001 (s10) pA 27K Capacitance (V,=0 V, f=1 MHz) c, 25 pF ‘Thermal Resistance"? Pour 750 KM TTL level is TTL Detector (Silicon Phototransistor) observed Capacitance but no TTL (Vega6 V fat Miz} Cx 68 pF switching times. Thermal Resistance’ Rous 500 KW ‘Optocoupior Group a -2and-3 a Collector-Emitter Saturation Voltage (=20mA) | (,=10mA) | (l= mA) (j= 10 mA, |,=2.5 mA) Veesar 0.25 (504) v Couping Capactance & 035 pF Tun OnTine | 301665) | 42(<80 | 6ost05) | ys "heer capri Ture ‘ ‘The couplers are grouped according to their current transfer ratio. Fall Time ‘ ws p= [ =] = [= | Collector-Emitter Leakage Current 2(<50) 5 (s100) | 5(s100) | nA Mee=10 V) (loco) ‘SFH 6106 5-154
SIEMENS AKTIENGESELLSCHAF 47E D Ml 8235605 0027319 b MBSIEG T-41-83 Switching times Common-mode Interference immunity
1 Changes in the potential difference between emitter and
F Input pulse detector are transferred to the output (collector-emitter) in form of an interference pulse via the coupling capacitance. Optocouplers without base contacting feature a substan- tially improved common-mode inference immunity, since in this case the part of the load that is coupled in the base J, {Output pulse: connection and additionally intensified by the transistor H —y power gain (B typ. 400) is dropped to a large degree. A i further improvement may be obtained by a capacitance ' between collector and emitter, which hardly influences the ! voy switching time, if adequately dimensioned. ' +s ! 5,
4 OE ot Measuring set-up for pulse diagrams
t d ‘ ke La 1ko fon — ten Vag = 10V om Output (5 V) The figure above defines the following times: a Turn-on time (t,,) The turn-on time to, is the tme in which the output current “Aerator ese (collector current). rises to 90% of its maximum value Pulse Qenersto Vex (6 VI 1s s9t By Ir _ after activation of the drive current I,. Pr The rise time t, is the time in which the collector current |, Input pulse (pulse generator) B rises from 10% to 90% of its final value. 3 Turn-off time (top,) ay OE oy ss The turn-off time top, is the time in which the collector 14 i! current |, drops to 10% of its maximum value after deacti- 1 ‘ vation of the drive current |. ' The fall time fis the time in which the collector current | “ ' drops from 90% to 10% of its maximum value. y | Output pulse (typical) = 10ns aa ee —-!,! v, S40 mv! | HH 410005 1 ' ' Hi V, = 15 mV —e } ! t =~ -50% q %--—-F-= => fq — i q Vv, = 16 mV: { q H ale rtons R HH i foam = 40 mv mong SFH 6108 5-155
SIEMENS AKTIENGESELLSCHAF 47E D MM 4235605 0027320 2 MSIEG Te Current transter ratio (typ.) Minimum current transter ratio ‘Output characteristics (typ.) " “88 versus temperature versus diode torward current Collector current versus: we 10 MA, Vie=5 V) uae, Ve5V) collestr miter voltage (typ.) | EEE HEE nen atc Eee] TTT) = Speco 1 ices THT TT SO uniaseearets) , Hee A recede an FETE 100 y iy SG] 0 [4A FEEL a ema A Ueisnssimivitasitill ATT een riagBeaimal ET Ea = oa _T —eh o 5 * he 15 Forward voltage (typ.) of the diode ‘Transistor capacitance (typ.) Permissible pulse handling my verses forward current ose we (cparameter tease ee esi eA AAT AE EE: 1 in AIT wea LM TT easels <<. 7 } 8 { wo cetera | “ETI H PNG urea Isr | ee | | ONT) = chore TPNH So coo | nee ON SLTTIN §-156 SPHer08