SFH610 SIEMENS | Alldatasheet

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SIEMENS AKTIENGESELLSCHAF 4?E D MM 8235605 0027298 2 MMSIEG 2.8 kV TRIOS’ OPTOCOUPLERS HIGH RELIABILITY ~ i= 3 Pr see a Package Dimensions mm 4 ve vd a nes F oe \\este- Da. ? be aie “ = read bei spacing E 4 eee ee oe ee nee, SFHEIO 2 3 Cathode-2 3~-Collector Eo oe a i DS 1 4 Cathode | 4 -Collector PU ae AEE Doe gn SFR én 1} Anode -2 [aac]; -Emuitter FEATURES sructs Lf Anode “fexx]s coer * Isolation Test Voltage: 2800 V 2 9 Cathode -2| 3 Emitter * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical (>13) DESCRIPTION * Fast Switching Times The optically coupled isolators SFH 610, SFH 611 and SFH 615 feature * Minor CTR Degradation a high current transfer ratio, low coupling capacitance and high © 100% Burn-in 'solation test voltage. They employ a GaAs LED as emitter, which is ith I . * Fleld-Effect Stable by TRIOS optically coupled with a silicon planar phototransistor as detector. * Temperature Stable The components are incorporated in a plastic plug-in DIP-4 package. * Good CTR Linearity Depending on The coupling devices are designed for signal transmission between Forward Current two electrically separated circurts. The potential difference between the * High Collector-Emit Volt circuits to be coupled is not allowed to exceed the maximum v ig = a lor-Emitter Voltage permissible reference voltages. * Low Saturation Voltage The couplers are end-stackable in a 2 54 mm spacing and are considered as successor types for the couplers in metal case. The * Low Coupling Capacitance SFH 610, SFH 611 and SFH 615 differ in their arrangement of the * End-Stackable in 2.54 mm Spacing terminal pins. Multicouplers can thus easily be implemented and * High Common-Mode Interference conventional multicouplers can be replaced. Immunity (Unconnected Base) © UL Approval #52744 “TRansparent On Shield ° & VDE Approval 0883 * <> VDE Approval 0884 (Optional with Option 1) 5-134

SIEMENS AKTIENGESELLSCHAF 47E D MM 8235605 0027299 4 MBSIEG T-41-83 Maximum Ratings SWITCHING TIMES Enutter (GaAs LED} Linear Operation (without saturation) Reverse Voltage wa weene none ws cen sw we wn BV DC Forward CUTER «asso eee snes sennne an we ne 6 MA Surge Forward Current (S10 fs). eee we BBA hk etsa Total Power Dissipation 6 wee we eee ene ee we vee 100 mW te Ee Vege BV oo Detector (Siicon Phototransistor) al Collector-Emitter Voltage es. a oes wine crear omnes on + TOV. Collector Current susan neo cee nee enme ne e ee OMA a Collector Current (U1 m8)... ose oe ae ne moe $00 mA, Optocoupler Storage Temperature Range ee sw 65°C to +150°C Ambient Temperature Range... 6. 5 wes 65°C tO +100°C - os - Juneton Temperatures ns www wae ss aw wae f00°@ — RRTOMA, VoreS V. Tis25°C Soldenng Temperature (max. 10s)". coe ee ee 260°C Load Resistance R Q Isolation Test Voltage?) (between emitter and detector referred Turn-On Time bw 3.0 ($66) ¥s Wotes:

1 Dip soldenng cuimum clearance from bottom edge ot package 1 5mm Special Fall Tina i 20 (536) bs

sdldenng conions apply when frough-contacted ect boards are used Pre

2 DC test votage in accordance wih DIN S7B83, drat 4/78

: e Characteristics (T,=25°C) Switching Operation (with saturation) i Emitter (GaAs LEO) He Forward Voltage (|,=60 mA) vy, 125(s165) 6s Breakdown Voltage (I,=10 pA) Vee 30 (26) v iA 1k Vop = 5V - Reverse Current (V,=6 V) |, 001 (s10) pA os Capacitance (V,=0V, f=1 MHz) ¢, 25 pF ey or 2 TTL inputs Thermal Resistance Fan 760 kw ~2- pullup resistor Detector (Silicon Phototransistor) oto Capacitance (Wee=8 V, f=1 MH2) Coe 68 pF Thermal Resistance Pun 500 kW +5v Optecoupler I Collector-Emitter Saturation Voltage 2,0k2 {j=10 mA, |,=25 mA) Vows —«028(04) TTL levels are m1 Coupling Capacitance (om 025 PF observed but no TTL switching times — The optocouplers are grouped according to their current transfer - ratio \\g/l, at V._=5 V, marked by dash numbers [= [= [ = |] = | lel (yet mA) 701-84) * Group a “aand-3 | Collector-Emitter (=20mA) | (|,=10 mA) eet | Oa | 2 | Seen | Seem | [sous | «2c80 [eosios | WVeg=10V) (en) Turn-OnTime & | 301585) | 42(<80) us Fattme 4 | stem | vet@an | ssa [as SFHEIOEIETS 5-135

SIEMENS AKTIENGESELLSCHAF 4?E D WM 8235605 0027300 7 MMSIEG 41-83 Caront transfer ratio (1) Minimum current transfer ratio ‘Output characteristics (typ.) t " % «* * (T,=25°C) Je O a eee ma Poe SM = Sere GER | An a fe OSes EES = “CITI | se eee TTA Tannaiadanlees® iaerervaadiid tara re of Tr en TAI ALLHTVUITE \\ vee Pec tal —-+r —+h 0 5 0 BY ; | x ] pera re . 1 p 101 See my i At TTT “Ra este WA WM TT Peis SStlagL ata vo HL LY 0 a oS TH wih il SENET pines ty [| UTA TTC pe iSee csueeteeics,. cr oS: a wl Ley * 107 to" 10° vn wy ws 19 10? we 10's we oA culent=10 mA, Corlidence coetclent S605), 200 120 % “HH 4 ” * ana p HHH ae pe fe 0 NH H ams Sucre TON ACEE Nog Uc . SaESNe il Ne a A a © 3 50 Ss 100 °C o 2s 0 Ss 100 °C th —h 5-136 SFH 610/611/615