SFH609 SIEMENS | Alldatasheet

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STEMENS AKTIENGESELLSCHAF 47E ) 6235605 0027294 5 MBSIEG HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inches(mm) . son sag a 297(74) : ‘ . mea | . a aig roca CITT & Pith g Csaamil easy i OF we je an A a 2816 ash re yy fg) sore ch [sence : , a 5) carvone [i Ma couecroR mi By 1 we {aJeurren Se {0 GHP OF PM . Pronon rms FEATURES Maximum Ratings * Highest Quality Premium Device Emitter (GaAs infrared emitter) * Built to Conform to VDE Requirements Reverse voltage Ya 6 v Term Stabilit DC forward current le 60 mA * Long Term Stability Surge forward current ($10 us)Ipsq 25 A * High Curent Transfer Ratios, 3 Groups ‘Total power dissipation Pr 100 mw SFH 609+, 40 to 80% Detector (silicon phototransistor) SFH 609-2, 63 to 125% Collector-emitter voltage ‘SFH 609-3, 100 to 200% (, = 0) Veco 90 v * 5300 Volt Isolation (1 Minute) Emitier base voltage (lg = 0) Ves0 4, ve ollector current mi * Storage Temperature — 40° to +150°C Gollector current (t<t ms) egy 100 mA * Voesat 0.25 (<0.4) Volt Total power dissipation Por 150 mw Ip= 10 MA, lc=2.5 MA Fr As Ie Optocoupler * Voeo 90V Storage temperature range Tstg —40to +150 °C © UL Approval #652744 Ambient temperature range Tam ~—4010 +100 °C Junction temperature Li 100 °C * VDE Approval #0883 Soldering temperature , (max. 10 sec)') Teoig 260 °c DESCRIPTION Isolation voltage (1 min}?) The optically coupled isolator SFH 609 features a high between ood current transfer ratio as well as high isolation voltage, Standard clwnate 29/50 and uses as emitter a GaAs infrared emitting diode DIN 50014 Vg 5300 Vde which 1s optically coupled with a silicon planar photo- s transistor acting as detector. The component is incor- AC reference voltage | 1 ace. oor 6.80 porated in a plastic plug-in package 20 A 6 DIN 41866, DC reference voltage panahrs S683, 6.80 The coupling device is suitable for signal transmission " between two electrically separated circults. The potential Geakage path mn 82 mm difference between the circuits to be coupled is not ir Pal min73 mm allowed to exceed the maximum permissible isolation °) Dap soldenng Insertion depth 36 mm voltage. 2) DC test voltage m accordance with DIN 57889 draft 4/78 5-130

SIEMENS AKTIENGESELLSCHAF 47E D MM 8235605 o027255 7? @ESIEG T-41-83 CHARACTERISTICS @25°C Emitter Forward voitage (Ip = 60 mA) Ve | 1.25 (<1.65)|v Breakdown voltage (Im = 10 uA) Ven |a0e6 |v Reverse current (Vq = 6 V) fa [0.01 (<10) |ya Capacitance (Va = OV.f= 1MH2) — |Cy_ | 40 pF : Thermal resistance Pinus | 750 kw Detector (silicon phototransistor) Capacitance (Vcg = SVif = 1MH2) [Coe [os pE (Veg = 5V,f = 1 MHz) Cog 185 pF (Veg = 5V;f = 1MHz) Coq | 11 pF Thermal resistance arsa | 500 kw Optocoupler ° Collector-emitter saturation voltage (lp = 10 mA, Ig = 25 mA) Vogsai} 0.25 (<0.4) |V Coupling capacitance cx 030 pF The optocoupiers are grouped according to their current transfer . ratio |,/l, at V,.=5 V and marked by dash numbers [oo ss > Calcio Emr gg Leakage Current (lea) 2(s50) | 5(s100) | nA = WVeg=10V) Linear operation (without saturation) ca Ran ‘Switching times a e te =10mA | nowtoaee a Vp = 8V a —_ cist | Load resistance «475 fF | Ovmngeey Fise time 4 [20~@40) us i ze Tumn-off me “tn 231841) ‘I ws i 3 Fall time 4 201835) [os i i = Cut-off frequency fe | 250 we Ld Switching operation (with saturation) * alte MO Var 5V m <2 or 2 TT inputs Tre twee fe FD win aT binorau @) Dulnup restor Seno Tre oo! Lo Senchng mas Group - 1 2end 3 a Turn-on time te | 30 (5 5.5) 421580) ps ise time t 20 t= 40) 30's 60) os Tum-off time tw | 184534) __—*| 23 t= 39) us Fall time “ 11 (S20) 14 1S 24) us en a 025 (504) v 5-131 SFA 609

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