SFH606

SFH606 SIEMENS | Alldatasheet

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STEMENS AKTIENGESELLSCHAF 47E D @®@ 8235405 0027290 & MBSIEG 5.3 kV TRIOS’ OPTOCOUPLER HIGH REL/FAST TRANSISTOR : Ge oe ro Package Dimensions mm oe ary Pes g # 65 an | $3 25h : spacing oe 1 6 Anode-tf; _-—]6-Base ae 2 5 cathode 2/4 Id 5-Collector 3 4 not-3 4 Emitter ee eae connected FEATURES DESCRIPTION . * Isolation Test Voltage: 5300 V The optically coupled isolator SFH 606 features a high current transfer * High Current Transfer Ratios ratio as well as a high isolation voltage. It employs a GaAs infrared at 10 mA: 63-125% emitting diode as emitter, which Is optically coupled to a silicon planar at 1 mA: >22% phototransistor acting as detector. The component is incorporated in a * Fast Switching Times peste P i ee 6 pecisge f ' ission b 1 coupling device is suitable for signal transmission between two * Minor CTR Degradation electrically separated circuits. The difference in potential between the © 100% Burn-In circuits to be coupled must not exceed the maximum permissible * Field-Effect Stable by TRIOS reference voltages * Temperature Stable * Good CTR Linearity Depending on Forward Current * High Colfector-Emitter Voltage “TRansparent tOn Shield Veeg=70 V * Low Saturation Voltage * Low Coupling Capacitance * External Base Wiring Possible © UL Approval #52744 . AS VDE Approval 0883 * (= VDE Approval 0884 (Optional with Option 1, add -X001 suffix) 5-126

SIEMENS AKTIENGESELLSCHAF 47E D mm 6235605 0027291 T MBSIEG T-4]~83 Maximum Ratings SWITCHING TIME Emitter (GaAs Infrared Emitter) Switching Operation (with saturation) Reverse Voltage vans oe se ssn ae neste eane nest ne ae OV DC Forward CUTEM ws nssnsnnnnnsesine sn se sstnnns «esos 660 MA Surge Forward Currant (ts10 ps). we ee BEA Total Power DISSIPAVON iss cists ceases ee sien ane eee cure ae TOO MW ci UR Veg = SV Detector (Silicon Photovansistor) or 2 TTL inputs Emitter-Base Voiage usu cue sntstee eee set vue ane an ite ane sneee pull-up resistor Collector CUEFONE asses se sens sae ee ee OMA Collector Current (S18) oe... oes sees eee vse nee oe ne 100 A Total Power Dissipation a we seueen 6 se eee we SO MW Optecoupler “sv Storage Temperature Range sein + cen se wns we vor e wn “BB°C 10 +1508C Ambient Temperature Range. 1... ees 5 S5°C 10 +100°C JURCHON Temperate weer sie wees see se vase vont ae see ne 100°C 2,0k2 Soldering Temperature (max. 108). a sae ee ee 2608S TTL levels are TTL, Isolation Test Voltage”) observed but (between emitter and detector referred 2g times to standard chmate 29/50 DIN 50014)... 5 = S300VDC 9 Leakage Path ace see nese ee neces we sweeee eee BOQ mm Tracking Resistance In Accordance with VDE 0110 §6, table 3, and L=10 mA DIN $3480/VDE 0303, part fu... su sae a vs ve 2100(Qroup 3) f Isolation Resistance (V.g=500V) . om ve 1" Turm-On Time be as = We: fee ne t 18 gf

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Yew | 504 | - Characteristics (T,=25°C) Emitter (GaAs infrared Emitter) Forward Voltage (|,=60 mA) ve 126 (<1.65) v Breakdown Voltage (1,=10 A) By 30 (26) v Reverse Current (V,=6 V) in 001 (s10) WA Capacitance (V,=0 V, f=1 MHz) c, 25 pF ‘Thermal Resistance Raua 750 KW Datector (Silicon Phototransistor) Capacitance (Vpe5 V, f= MHZ) Coe 62 pF (War8V, (1 MHz) Co 65 pF (Wyy25 V, f=1 MHz) Coy 95 pF Thermal Resistance Pasa 500 kw Optocoupier Collector-Emitter Saturation Voltage (p= 10 mA, |,#2 5 mA) Vecsat 0.25 (s0.4) v Coupling Capacitance tom 0s pF ‘Current Transfer Ratio (jy=10 ma) leuk 63-125 % (=1 mA) tole 45 (>22) % Collector-Emiter Leakage Current (Mge= 10 V) eco 2 (535) nA ‘SFH 606 5-127

SIEMENS AKTIENGESELLSCHAF 4?E D MM 8235605 0027292 1 MBSIEG 1-41-83 Minimum current transter ratio ‘Current transfer ratio (typ.) Current transfer ratio (typ.) versus diode forward current versus diode forward current versus diode forward current (T,=28°C, Veg=5 V) (T,=25°C, Vege 5 V) (120°C, Veg=5 V)

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SIEMENS AKTIENGESELLSCHAF 4?E D @™@ 8235605 0027293 3 MMSIEG z T-41- Diode forward voltage (typ.) Collector-emitter leakage current Transistor capacitance (typ.) 41-83 versus forward current typ yet that transitor versus: voraus omer wokage ne) * SSS * a T oe "Ee aN ra FAVA | LIA sonal ! Pty | CH li | Yo NIE wed ni ay Aaa (SSS } | ie cu MA EARS CIMA Waa ges NG aC ATT Tae ESA ees Iabeea KC | tL Gee ING Wer Tt an rt SMe = TE IETS ” 5 0 aa Smale? 0 3 0 2 *C 10 wv? ~! eo, v 2 * ea ~ Tks g piel iokel sun a a i be No | ee q fo | s = tea Ne TUTE CoN : Cie ott Baa) “a ipeetieasi Seti BE| i © Coe | oo SSC H ol CTS | » Te 0 trae oe 8 | 5 SSS Et 0 4 é UTA a Steet eatinctiotinal| 1 ze oe T 1 «eat Con oT Te iLL LN v? 0 1 vio Sas mw? wt wo si —% —* —1 Permissible forward current of the Current transfer ratio versus load time diode versus ambient temporature Wars Vt io. 870,10 ‘mA, Measuring current =10 mA,

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