SFH6016 SIEMENS | Alldatasheet

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SIEMENS AKTIENGESELLSCHAF 4Y?E D MM 8235605 002731e 3 MBSIEG 5.3 kV TRIOS’® OPTOCOUPLER HIGH RELIABILITY Package Dimensions mm 87 85 aD ‘7,62 typ on 7 2. O55 ° om 045} [NIE 84min Sa 10,31 ox: ‘ +491 65.

3 Ry 1] > 6 Anode - Fy 6 - Base

i @ 2 [5 Cathode - 2} Id 5 ~ Collector i, x. 3g] [E> 4 not connected - 3} 4 ~ Emitter SJ 2) Clearance and creepage distance must be considered in the solder-pad design —+—+= Clearance and creepage distance 8 O min

FEATURES

  • Isolation Test Voltage: 5300 V DESCRIPTION * High Current Transfer Ratios The optically coupled isolator SFH 6016 features a high current transfer at 10 mA: 40-320% ratio as well as a high isolation voltage As emitter it employs a GaAs at 1 mA: 13-90% infrared emitting diode which Is optically coupled with a silicon planar * Fast Switching Times phototransistor acting as detector. * Minor CTR Degradation The component is incorporated in a plastic plug-in DIP-6 package. * 100% Burn-In The bent terminal pins are suitable for surface mounting (SMD) The * Field-Effect Stable by TRIOS electrical data complies with that of the SFH 601 coupler. * Temperature Stable The coupler allows to transfer signals between two electrically isolated * Good CTR Linearity Depending on circuits. The potential difference between the circuits to be coupled is Forward Current not allowed to exceed the maximum permissible reference voltages * High Collector-Emitter Voltage Voeos70 v “TRansparent On Shield * Low Saturation Voltage * Low Coupling Capacitance * External Base Wiring Possible * UL Approval #52744 . VDE Approval 0883 . VDE Approval 0884 (Optional with Option 1) * Confroms to VDE #0805/0806 5-148

SIEMENS AKTIENGESELLSCHAF 4?7E D Ml 8235605 0027313 5S MMSIEG J-41-83 Switching times The figure on the left defines the following times: A Turn-on time (t.,.) Input pulse The turn-on time ty, 1s the time in which the output current (collector current) I, rises to 90% of its maximum value after activation of tHe drive current |. The rise time t, is the time in which the collector current Ip i lOutput puree! ses from 10% to 90% of its final value H SI Turn-off time (to-,) : The turn-off time t,,, 1s the time in which the collector | current |, drops to 10% of its maximum value after deacti- ' one vation of the drive current I. H 3 | The fall tme 11s the time in which the collector current Ig AS et drops from 90% to 10% of its maximum value. 7 oes J ton a for Minimum current transfer ratio Current transfer ratio (typ.) Current transter ratio (typ.) versus diode forward current versus diode forward current versus diode forward current (T,=28°C, Vg=5 V) (T,=28°C, Ve=5 V) (T,=0°C, V5 V) _ % % % ee 300 0 4 mm 105 = a. =: = g Ga) | ¢ ESSA Aa 2S ESTEE SS ui Io | eo EHH I i fp==c aii] =e St eee il 1 {ih | cen | | rin te S “HEHE PTAC ee HON = LUI feos ie matali BCA bs oH AR aiipiae Beige sui CAAA Lhe A a ZA \\at Ly ial I At 2 2 AL f lean Te) A Is et , LIL ult: - {gO ttm OG? 5 m2 SW Pm One $2 5 wh MA hk ook —! Current transter ratio (typ.) Currant transfor ratio (typ.) Current transfer ratio (typ.) versus diode forward current versus diode forward current versus diode forward current (T,=25°C, Veg=5 V) (T,=50°C, Vee=6 V) (T,=75°C, Vee=6 V) a % “

105 Sees noe] 10° 108 ns pe,

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2 Fee to EF a ears Je

a [-E iit anno | ra | Ae fifi . yr CU is ; ee ou | ape TN ee CAE CT ade) WET Ch hs ea ieee oe iF i ‘fl u Ser eee i= EA | 5 ar aerate 3 LZ ai : a fi f| T AY A Zt LEO Wi, ara fi Al IAW) IE Fe wr? 5 1 2 5 10" 2mA wi? 5 1 2 5 0 2ma 02 5 we 5 10! 2 ma ——k oh ——h SrHe078 5-149

STEMENS AKTIENGESELLSCHAF 4?E D MM 8235605 0027314 7 MMSIEG Maximum Ratings Linear Operation (without saturation) Emitter (GaAs Infrared Emitter) 1 ReverseVollage 2. ew me we BV A A752 DC Forward Current. . re 6OmA GoM en SV TotalPowerDissipaton =. 2. 100 mW a _ Detector (Silicon Phototransistor) Collector-Emitter Voltage. 2 ee we woe TOV EmitterBase Voltage... ee TM |,=10 MA, Vop25 V, Ty=25°C Collector Currant. : ce SOMA, Collector Curent(Ust ms) oa vs ss, 100ma Lead Reetance a a TotalPower Dissipation © 6 ne eee we es 150 mW Turn-On Time bw 30 (556) 1s Sinead fase Storage Temperature Range. we 40°C to + 150°C use Tine. h Casi Lad Junction Temperature. 400° Fartme ‘ 1 ‘Soldering Temperature (max. 10s)". 260°C Isolaton Test Voltage”) Cut-Off Frequency Foo [20 | kHz (between emitter and detector referred to standard climate 23/60 DIN 60014)... «$300 VOC Leakage Path... Lo : 282mm Arpath . : Dee | 280mm Switching Operation (with saturation) Tracking Resistance de U2 Von = SV In Accordance with VDE 0110 §6, table 3, and DIN 53480/VDE 0303, part 1 an 2100 (group 3) ~ or 2 TTL inputs Isolation Resisiance (V,.=500 V) . 10" with a 2.7 kQ pull-up resistor Notes:

1 Not for wave-soldenng asv

2 DC tee! vokage in accordance with VDE 0883/8 80 2.7K Characteristics (T,=25°C) Tit eval is TL Emitter (GaAs Infrared Emitier) but no TTL Forward Voltage (|,=60 mA) vy 125(s165) VV switching times | Breakdown Voltage (1,=100 nA) Ver 30 (26) v Reverse Current (V,=6 V) ly 001 (s10) pA Capacitance (V,=0 V, f= 1 MHz) c 40 pF Thermal Resistance"! Rawr 750 kaw Group a -2and-3 —4 Detector (Silicon Phototransistor) (1,=20 mA) {=10mA) | (|,=5 mA) ees tot MHZ) og se OF jurn-On Time yy (55.5) 42(s80)_| 60(st05) | us Wee5V. 24 Me) Ca 35 pF RisoTime 46(s80) | ys eet a. oo oy Um-OH Time toe (534) 3 ($39) 25 (43) | ps Coupling Capacitance [om 058 pF Note:

1 Siac av, coupler soldered to PCB or base

The optocouplers are grouped according to their current transfer ratio |,/|, at Ve_=5 V, marked by dash numbers P= [2] = [=] fh et ma) * Collector-Emitter Leakage Current | 2(s80) | 2(s50) | 5(s100) | 5(<100) | AA Weq=10 V) (lees) | ~ SFH 6016 5-150

HAF (yp) ELLSC teristics S AKTIENGES Saletan ae , EMEN ee nol connectod (12 25°C SI aston characte Base nol conned Tran: nt vereu Collector currer voltage |-=0) nN igi snr mt (rein ee BS Current trai rature _ | {6633) J+ Pera abi mA 7 CN = (j=10 mA, Va "Teor | Ie He tel fe SescEERESI EET HE fo er Jo fo oe Hoa ETT Papen ot psec ll erat bet 2 Annas! poe 4 Se I ggayessnnnaias . ee eis [Saba posed oe Ba eeees| = nAnLAESH FH aman Sa jee basa aa, sy nto et 1H pe aa eS —+Ve HT mal Fe ae Ea =) FS BV ) — : | cri 5 Veg 8 (typ.) z i” | \\ il Kl F ro %0 ~— Aecnentrnanatatn 38 ee “a latage cer eerste I, i Dp af the transistor gorsus of ni 3 yrmeem Sere z a ERLE .) tA 2 ii i} versu BREE spa eaue AEbEa! = NY bi eazataas fot 8 ETN mise el v | sae AT A Nia ; Lyte: ay “OTM ines i . ae = iii IT a | % V, et w eeeeteescsssiis Hitters ® Hea NTH pA dfs ENG " Wn if | EEA THT aL! HH NSU A HIT A Sct I L V/A | Beedle Tee Il //y 1 SE HEE 2 Si UT Ti 7 ety Al, H SA iw [nal ew v S| ail 75 wore ability | TTI tee 108 aA a os — Forward currnt versus pase wath f 0 Forward current =26°C) 09 ow 7 irrent of the (D=parameter, T,: oa wt Shade vereue ambient tempo a neque 7 Alode Erie itt sipation m Fa

1 Rue iil Hs Ep

fe |! iiss al : | ease TRS | Lt | ae HH Ci ANT) ne SLC a tot i x 1 i 1 Wf ws Cie \\ | ; ee we @ “LLLN ° _ al mc of 3 oo 5-151 .

SIEMENS AKTIENGESELLSCHAF 47E D MM 8235605 002731b 0 MSIEG T-41-83 Diode capacitance (typ.) Current transter ratio versus load time (reuse tern she leer acai ra mA, Measunng current =10 mA, Bs ce ee ea *% eH eat 0 Foret ile [et & LOO eee Onin a a EIN aa eer ea 0 mo Pye so i 2 STi slse. Ll wi ted «Hil at ; — oe ith ral eee AP > og Hiblil tyulul, Lot o » ow wn ee ny Kh Collector-emitter saturation voltage typ.) versus collector current and control range "for: (T,=25°C) orouP Group2 ot Am 0 Meme og TT Mow INE CTT PSP Conch as eee cr os Sfifk lf os os I TUTTI oe oa LM cee oH te os LIZ Tl SCC OSC ae ao — ea a1 or ewe oI | ll od All we 5 0 5 1?mA Ww? 5 1 5 Wma le —liIk Group 3 Group 4 v v

10 Ore —

3b Ate 03 " | t | me +t Y nih epee tie | “FT te “=P ttt = Co 0 5 o 5 10’mA oe > 0 5 10? mA —-k — Note: FITS et, maar at ne curent ew ofthe ode has be ated oc he vate lhe cotetrcurent wes 5-152