SFH601-1 SIEMENS | Alldatasheet
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G SIEMENS AKTIENGESELLSCHAF 4Y7E D Ml 6235605 oo2726e 9 MMSIE PHOTOTRANSISTOR OPTOCOUPLER F4I-B3 Package Dimension in Inches (mm) Sr Bia =m wsaglf wer TT 1 2 seas, 5 Fe an L 2m t ee 3 oy |p noe oF [a] oe ° a 5} carwoce EF} Ma lcouzcTon ‘ o Gy] ig) w By [a] eurrren . Maximum Ratings Reverse Voltage (Vp) ev Forward Current (ip)... 2. Le coma Surge Current ig) tp = 1068 2.5A Power Dissipation (Prop) : 100 mw Detector (Silicon Phototransistor) FEATURES Collector Emitter Voltage Weeo) mov « Highest Quality Premium Device ‘Emitter Base Reverse Voltage (Vego) 7 * Built to Conform to VDE Requirements Sacto Curent c) ims ogg + Long Term Stability Power Dsopetion Big) 150 mw © High Current Transfer Ratios, 4 Groups Coupler rt SFH 601-1, 40 to 80% Storage Temperature Teton) 40 to +150°C SFH 601-2, 63 to 125% Ambient Temperature (Tamp) 400 + 100°C SFH 601-3, 100 to 200% Botdering Terperatre 108 Max 20°C SFH 601-4, 160 to 320% Isolation Test Voltage (V,q).1 Min per VDE 0883 5200 VOC ¢ 5300 Volt Isolation (1 Minute) (between emitter and detector relerted to * Storage Temperature —40° to +150°C renee cumate 2360 O1N 50014) Min 82mm * VCEgar 0.25 (<0.4) Volt at Ip= 10 mA, air Path Min 7-3 mm 1¢=2.5 mA Tracking Resistance . ave Approval #0883 Aso nominal isolation voltage DIN 57883 or VDE 0883 applies © “VDE Approval #0884 (Optional c_inaten Resstance (Rg) 8 Vj = 500 wa . i imal ions with Option 1, add -X001 suffix) Deano ay Clase F * CECC Approved Flammability DIN 87471 ar VDE 0471, Part 2, DESCRIPTION ‘of Apmi 1975 or MIL202E, Method 11 A The SFH601 Is an optocoupler that is com- prised of a GaAs LED emitter which 1s, optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case 20 AB DIN 41866 The coupler transmits signals between two electrically isolated circuits. The Potential difference between the circuits to be coupled 1s not allowed to exceed the maxt- mum permissible insulating voltage 5-118
SIEMENS AKTIENGESELLSCHAF 4Y7E D Ml 6235605 0027243 0 MSIEG Characteristics (Tamb = 25°C) Linear Operation (without saturation) Emitter (GaAs LED) I, Forward Voltage (Vp), Ip =60mA 125(2165)V fe RTA ‘Breakdown Voltage (VaR), Ip = 100 A. 30(>6)V OV o9= BV Reverse Current (Ip), Vp =3V . 0.01(=10) yA one Capacitance (Co) (Wa=0¥, '=1 MHz) : 400F a Thermal Resistance (Rthsamb) = > 750 KW —— Detector (silicon Phototransistor) Capacitance (Voge =5 V, f= 1 MHz) pannel , apr |p=10 MA, Vago S V, Tyqy 25°C Soe se 85 pF Ceg Lo . 119F Load Resistance rR] 2 | a Thermal Resistance (RtnJamb) sKW . i Coupler Collector-Emntter Saturation Voltage (Vcesat) Rise Time h 20(s4.0) ps (ip = 10 MA, Ig =25 mA) 025(<04)V Turn-Off Time lor | 23«6a1 | 1s ‘Coupling Capacitance (Cx) 030 pF Samy A 20638) = The optocouplers are grouped according to their current transfer» Cut-Off Frequency Fo | 20 (| _ikte ratio |, /|, at V,.=5 V, marked by dash numbers i i [ = | [_-*_] Switching Operation (with saturation) Collector Emitter a or 2TTL inputs Leakage Current | 2(<50) | 2(s60) | 6(<100) | 5¢st00) | nA > with a2 7 kQ _ (Vee=10 V) (log) pull-up resistor 4 cs —-—»o 22 * is ? se ss iP 140 TTL levels are ~ etl observed but no TTL matching times Group = —2and—3 =4 Tum-OMfTime be | 18 (s34) 23a) | 251543) | us ‘SEH GOT 5-119
SIEMENS AKTIENGESELLSCHAF 47E D MM 8235605 0027284 2 MBSIEG T-41-83 aa tonction of diode current. fonction of dvode current Toa, = 25°C) fonction occ Sen =o A, Sep i SSS eon TT -SSSe eeeee TO) CEES Ee i: nits sett 1 . qn i venngpente He pees ani Derma aa Mis eal ’ rill MY pee a aiegeiin aS pgs 5 TV a LU zal il o Hill i! _| wr Zl ZI i | oa) ‘100 107 102 ma wl? 5 Ww? 5 0! 2mA wre 5 2 5 Pad 2mA eh —kh he function of diode current (Tia = 25°C) Kincton of ogee aR ng aw fonction of ede ‘gureent (Tom = 78°C) ery Nee=s¥ foray Vee=sv ferns veessv ° ae . ES SaaS 2 SS set St Seep cdi = ae ice 0 {i anni {IT . He : ; ee Cu ii Ser oon ae a a oo ae il aes cia : A a TO ACH Perineal 7a bh om EAT | Ht aul il Fe A | ( Ue | LAL TT MALT w AA UM wt? 5 0 2 Je 2 ma 2 5 ow ase 2mAa wor? 5 ase 2mA lenin econ ego ~ te 108 a *oTTWITT aa —— fob +f oo Ju) RARER ERR — sienna 2 = a ina [SS " inasaag Ea a ry Hi Lit Be ASSSEESSESEAEA wy ' Cee re 2a 25 0 6 50 75°C O 5 a) bv —T — ve 5-120
SIEMENS AKTIENGESELLSCHAF 47E D MM 8235605 0027285 4 MMSIEG T-41-83 Cotectoremiter of-tate Saturation vokage a8 unetion Output characte c= Ves) Forward vote Ve =H) arent tt eolecor curent snd module: ame = 25°C) logo = 1 T) Tym = 25°C thon depth for SFH 601-1, y we I= OQ) y VCE an = lc) Tame = 25°C) Pep prep n MLE dete crc 0 Hel igen {fl {i i see HET pees a = Hy Ie Ts i . A ase eso Ft] | Ice 4Ov 5 aa Moet Hl To Teas i ae) = irae girth uy fl | SCEECI Ge ne vo eee eeneeee s/n tan elle Ae! al ott Het Ties Omak. \\ My Sh ey A SH ot Ten dele yo aa ta AME oS Ares ie eid tne bk is Tl coichy as a . + <T} : val Feasapaer ie a fi ot stale j tn it tf lh wl s ERATE eel eae EL ata rs en Ane ae Aral ea pipe eo tn Tie and ry re ee aaniaiite o}—~ att Rano coeeees we A tal Lh me: ANA MAI IMHEH sot dal och aa 7 — —r ‘Saturation voltage as a function ‘Saturation voltage a6 a function ‘Saturation voltage as a function of collector current and module- of collector current and modula- of collector current and module- Diode capacitance C = f(V,) tion depth for SFH 601-2 thon depth for SFH 601-3. tlon depth for SFH 601-4 (Camp © 25°C, f = 1 MHz) v Vee sat = {(le) (amp = 25°C) WV ce sat = (lo) Tame = 25°C) ¥ Voce sat * Mo} Tame * 25°C) s ‘ HLL " yo fey wert aT “Wt cori p aT Ps eo |e or math et ie ren i Parse pp ie footy ' Wor ort i i or qoit | re ia coe Ag i —_ os aaa ah ted bate Wm cy ae ear sé i i iv joe ne an : $3 oi “a Bertie Foes os ~ 33 Cement ( 1 oe H in L i pa 1 | 2 vl a as hi aH il anak | a Aer 1. se otitis i f de Sele o— peta o te ate oe TT “ f { h Hirt {Se Pei imei Ae nL A A TT yee lll LLL Ul owt ULE cull we 5s ow 5 ma ‘19% s a 5 Wea 7 5 © 3 mk uw . wv ay the rk —* — Me Permistla pulse loud Pormiaible los transistor Permissible loss dode Taneloercopmonanoes V = parameter Tyny = 25°C Pree = amo! Pig = {Tab © = (Vo) (Tam = 25°C #= 1 es 7 a i ean pro ier rtf SLU LM I TT el \\ ss Jee etek AAG DSS ce a | Transesee i | CTT TART Heel . eee: ‘i - ve rometa it io SU UN aiee= se PS » TECHIE aI aS Scotia NNT LI Sener Wr be wee '. ett ne Bab aciess 7 a CNS Hl - pen a in fo Ne SLU is etl lk ill all ot ta. ott SA EY ws ws wo? wo wh Wows o co 0 s wo °C ry Fy Ey 1s 0% an wo wy ic ‘Variation of current transter ratio as a function of load time: E =10) ” le ™ 7 7 Vee = 5V eT IMT INE a css tr “| itt 4 Tune = 25°C eg OE a ST Condens eaeownt sera i il confidence coetficien a } Lal lal | Sm e0m ISAT Se TNE WOU, oo UTIL | UIE EAI Cu 10" De v wt wh or 5-121