SFH520 SIEMENS | Alldatasheet
Document overview
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Technical content
Features
Substrate: 4600 ± 1400 Ω cm Chip thickness: 381 ± 15 µm Topside: Aluminium contact 1.4 µm Aluminium total cover 0.1µm Backside: 0.4 µm Au/As
- Low dark current
- Low capacitance
- High breakdown voltage permits operation at full depletion Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. fes06874 Typ Type Bestellnummer Ordering Code SFH 520 SFH 520 A Q62702-P419 Q62702-P429 α -β-γ−Strahlungsdetektoren SFH 520 α -β-γ−Radiation Detectors SFH 520 A
Current and Capacitance Characteristics per cm2 Bezeichnung
Description
100 µA VR > 180 V Dunkelstrom Dark current 100 V 160 V IR (< 15) 10 (< 20) nA Flußspannung Forward voltage 100 mA VF 0.7 (< 2.0) V Kapazität Capacitance f = 1 MHz,Ev = 0 80 V 150 V C pF Kapazität pro cm Capacitance per cm2 120 V C /cm2 32 pF Betriebsspannung Operating voltage Vop 90 ... 120 V Ladungsträger - Lebensdauer Charge carrier lifetime – 10 msec.