SFH5110 INFINEON | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
- IC with monolithic integrated photodiode (single chip solution)
- Especially suitable for applications of 940 nm
- High sensitivity
- Various bandpass filter frequency
- TTL and CMOS compatibility
- Output: active Low
- No external components necessary
Applications
- Remote control module for TV sets, VCRs, hi-fi audio receivers, SAT receivers and compact disk players
- Optical Switch
2000-01-01 2 OPTO SEMICONDUCTORS SFH 5110, SFH 5111 Typ Type Trägerfrequ. Carrier Frequency kHz Bestellnr. Ordering Code Typ Type Trägerfrequ. Carrier Frequency kHz Bestellnr. Ordering Code SFH 5110-30 30 Q62702-P5088 SFH 5111-30 30 Q62702-P5257 SFH 5110-33 33 Q62702-P5089 SFH 5111-33 33 Q62702-P5258 SFH 5110-36 36 Q62702-P5090 SFH 5111-36 36 Q62702-P5259 SFH 5110-38 38 Q62702-P5091 SFH 5111-38 38 Q62702-P5260 SFH 5110-40 40 Q62702-P5092 SFH 5111-40 40 Q62702-P5261 Grenzwerte ( TA = 25°C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operation and storage temperature range Top Tstg – 10 … + 75 – 30 … + 100 Betriebsspannung Supply voltage VCC 6.3 V Betriebsstrom Supply current ICC 5m A Ausgangsspannung Output voltage VOUT 6.3 V Ausgangsstrom Output current IOUT 3m A Verlustleistung Total power dissipation TA ≤ 85°C Ptot 50 mW
SFH 5110, SFH 5111 2000-01-01 3 OPTO SEMICONDUCTORS Kennwerte (TA = 25°C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit min. typ. max. Betriebsspannung Supply voltage VCC 4.5 5.0 5.5 V Stromaufnahme,VCC = 5 V,E = 0 Current consumption ICC – 1.3 – mA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λs max – 940 – nm Spektraler Bereich der Fotoempfindlichkeit Spectral range of sensitivity λ 830 – 1100 nm Ausgangsspannung Output voltage Output “High” - ( Iq = 10µA) Output “Low” - (Iq = 500µA) VOUT high VOUT low VS – 0.5 0.5 V Trägerfrequenz Carrier frequency f0 – kHz Min. Bestrahlungsstärke (Testsignal, s.Fig. 3) Min. Threshold irradiance (test signal, seeFig. 3) f =f0,tp,I = 600µs Ee min – 0.35 0.5 mW/m 2 Min. Eingangspulsbreite „ON“ (Testsignal, s.Fig. 3)1) Min. Input pulse width “ON” (test signal, seeFig. 3)1) tp,I 6/fO –– µs Ausgangspulsbreite „ON“ (Testsignal, s.Fig. 3) Output pulse width “ON” (test signal, seeFig. 3, Ee = 1 mW/m2) tp,O tp,I – 6/fO – tp,I + 6/fO µs 50%-Filterbandbreite,f =fO ,EV = 0,VCC = 5 V 50%-Filter bandwidth Δf50% 3–6k H z 1) Die volle Empfindlichkeit wird bei einer Burstlänge von mindestens 6 Pulsen erreicht. Die Reichweite bei Verwendung eines typischen Senders (SFH 4510/SFH 4515,IF = 500 mA) beträgt etwa 30 m. 1) A minimum burst length of 6 pulses is necessary for full sensitivity. The transmission distance with a typical transmitter (SFH 4510/SFH 4515, IF = 500 mA) is about 30 m.
SFH 5110, SFH 5111 2000-01-01 5 OPTO SEMICONDUCTORS Figure 3 Optisches Testsignal Optical Test Signal OHF00399 = tp, o ± 6 / fop, It t t tp, I toff, I tp, I Burst wave: carrier frequencyfo, Duty cycle = 0.5 Transmitter Detector (Output Signal)
SFH 5110, SFH 5111 2000-01-01 6 OPTO SEMICONDUCTORS Relative Luminous Sensitivity Srel =f (λ) Relative SensitivityEe/Ee, min= f(f0) λ OHF00400 700 S rel 100 nm 800 900 1000 1100 Center Frequency OHF00403 E e, mine / E 1.5 2.5 3.5 4.5 fo-4 -2 off o +2off o+4kHz Vertical Directivityϕy ϕ OHF00401 E e, min 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 [ ]30 60 90 e/E Horizontal Directivityϕx ϕ OHF00402 E e, min 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 [ ]30 60 90 e
SFH 5110, SFH 5111 2000-01-01 7 OPTO SEMICONDUCTORS Maßzeichnung Package Outlines Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. GEO06985 1.3 6.124.4 6.1 0.5 3.5 23.4 5.9 1.1 5.9 0.3 3.3 0.6 0.4 2.54 2.54 4.9 5.1 2.8 3.0 Pinning SFH 5110