SFH500 SIEMENS | Alldatasheet
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STEMENS AKTIENGESELLSCHAF 47E D Ml 8235605 0027523 5 MSIEG ITAl-G@ | Package Dimensions in Inches (mm) = 110 (28) fey) 010 (8) Lo 018 045) —ecB ~ , ‘ iy : rae 185 161 01 . 10748) se) ‘ e| sings) fis 217653) Radiant Senarve Arvo (37) x (37) Maximum Ratings Collector emitter voltage Veeco 15 v Emitter base voltage Veso 7 v Collector current Te 20 mA Junction temperature T 400 kel Storage temperature x 5104100 Max. soldering temperature (t <5 5) qh 260 c Power dissipation (Tamp = 25°C) Prot 100 mw Thermal resistance FEATURES Collector junction to air Rensamo 600 K/w Collector junction to case Rinscae 250 KW © TO-18 Package @ Flat Glass Lens Characteristics (7,,.= 25°C) Photocurrent @ Fast Speed, 2 MHz (Vee = 5 V, & = 1000 Ix)? Ty 700 (> 450) uA (Vee = 5 V, E.= 05 mWlem?)? Ib 185 uA Wavelength of the max sensitivity Asmox 825 nm DESCRIPTION . Quantum yield oes Electrons SFH 500 is a fast NPN silicon planar {Electrons per photon)(A = 850 nm) a Photon’ photodetector with a frequency to 2 MHz Spectral beled Oe 850 nm) Sy 056 Aw : lector-emitter leakage curren and a wide range of modulation from 102 (Woe = 10V.E = ae Ieeo 20 150) aA to 104 LUX. The chip is mounted in a Collector emitter saturation voltage TO-18 package with flat glass lens window. lic» SODA, Te = 264A, E = 0) Vee O81.) OV i i i Range of spectral sensitivity The photodetector is especially suitable ($-015..) X 420 to1100 am _ for light wave conductor application Typ spectral sensitivity of Bs through the small cap body (up to 2 Mbits/s). __the collector base photodiode s 117 Alix ge Also suitable for industrial electronics and Rachant sensitive area hs A 014 mm? 2 ‘cat 1e and fall time of the photocurrent £ in camera opplications where a wider Rise time to 90% of the final value 32 sensitivity range is necessary. The case is Fall time to 10% of the initial value Pt electrically connected to the collector. {Ry = 1kQ)" tot 0.25 us Capacitance (Vee 5 V, f= 1 MH2, = 0) Coe 27 pF (Veg = 5.V. f= 1 MHz, = 0) Con 56 pF Cutoff frequency {R_ = 50, V= 12 V, T= 5 mA} f 2 MHz Current gain (Vee = 5 V, Io=0 1 mA} 8 600 - Nenaauured with LEO A= 950 nm) 2g (ce) = Photocurrent of the phototranustor Ip (eB) * Photocureent of the collector oats photodiode 9-31
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