SFH415 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • GaAs infrared emitting diodes, fabricated in a liquid phase epitaxy process
  • Good linearity (Ie =f [IF]) at high currents
  • High efficiency
  • High reliability
  • High pulse handling capability
  • SFH 415: Same package as SFH 300, SFH 203

Applications

  • IR remote control of hi-fi and TV-sets, video tape recorders, dimmers
  • Remote control of various equipment GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. 7.8 7.5 9.0 8.2 1.8 1.2 4.8 4.2 ø5.1 ø4.8 0.8 0.4 0.6 0.4 2.54mm spacing 5.9 5.5 0.6 0.4Area not flat Chip position Cathode Approx. weight 0.2 g GEO06645 5.9 5.5 0.6 0.4 ø5.1 ø4.8 2.54 mm spacing 5.7 5.5 6.9 6.1 4.0 3.4 29.5 27.5 1.8 1.2 0.8 0.4 Area not flat 0.6 0.4 Cathode (Diode) Chip position GEX06630 Approx. weight 0.4 g Collector (Transistor) fex06630 fexf6626

Semiconductor Group 2 1997-11-01 SFH 415 SFH 416 Grenzwerte (TA = 25°C) Maximum Ratings Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 415 Q62702-P296 5-mm-LED-Gehäuse (T 1 3/4), schwarz eingefärbt, An- schluß im 2.54-mm-Raster (1/10’’), Kathodenkennzeichnung: kürzerer Anschluß 5 mm LED package (T 13/4), black-colored epoxy resin lens, solder tabs lead spacing 2.54 mm (1/10’’), cathode marking: short lead SFH 415-T Q62702-P1136 SFH 415-U Q62702-P1137 SFH 416-R Q62702-P1139 Bezeichnung

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 55 ... + 100°C Sperrschichttemperatur Junction temperature Tj 100 °C Sperrspannung Reverse voltage VR 5V Durchlaßstrom Forward current IF 100 mA Stoßstrom,tp = 10µs,D = 0 Surge current IFSM 3A Verlustleistung Power dissipation Ptot 165 mW Wärmewiderstand Thermal resistance RthJA 450 K/W

Semiconductor Group 3 1997-11-01 Kennwerte (TA = 25°C) Characteristics Bezeichnung Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA,tp = 20 ms λpeak 950 nm Spektrale Bandbreite bei 50 % vonImax Spectral bandwidth at 50 % ofImax IF = 100 m A Δλ 55 nm Abstrahlwinkel Half angle SFH 415 SFH 416 ϕ ϕ ± 17 ± 28 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm 2 Abmessungen der aktive Chipfläche Dimension of the active chip area L × B L × W 0.3× 0.3 mm Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top SFH 415 SFH 416 H H mm mm Schaltzeiten,Ie von 10 % auf 90 % und von 90 % auf 10 %, beiIF = 100 mA,RL = 50Ω Switching times,Ie from 10 % to 90 % and from 90 % to 10 %,IF = 100 mA,RL = 50Ω tr,tf 0.5 µs Kapazität Capacitance VR = 0 V,f = 1 MHz C o 25 pF Durchlaßspannung Forward voltage IF = 100 mA,tp = 20 ms IF = 1 A,tp = 100µs VF VF 1.3(≤ 1.5) 2.3(≤ 2.8) V V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤1)µ A Gesamtstrahlungsfluß Total radiant flux IF = 100 mA,tp = 20 ms Φ e 22 mW

Semiconductor Group 4 1997-11-01 SFH 415 SFH 416 Gruppierung der StrahlstärkeIe in Achsrichtung gemessen bei einem RaumwinkelΩ = 0.01 sr Grouping of radiant intensityIe in axial direction at a solid angle ofΩ = 0.01 sr Temperaturkoeffizient vonIe bzw.Φ e, IF = 100 mA Temperature coefficient ofIe orΦ e, IF = 100 mA TC I – 0.5 %/K Temperaturkoeffizient vonVF,IF = 100 mA Temperature coefficient of VF,IF = 100 mA TC V – 2 mV/K Temperaturkoeffizient vonλ,IF = 100 mA Temperature coefficient ofλ,IF = 100 mA TC λ + 0.3 nm/K Bezeichnung Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max ≥ 25 > 40 > 10 mW/sr mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100µs Ie typ. – 380 600 150 mW/sr Kennwerte (TA = 25°C) Characteristics Bezeichnung

Semiconductor Group 5 1997-11-01 Relative spectral emission Irel= f(λ) Forward current IF = f (VF), single pulse,tp = 20µs OHRD1938 λ relΙ 880 920 960 1000 nm 1060 100 OHR01554 V F -310 10 -2 10 -1 10 0 10 1 FΙ A 1 2 3 4 V 5 Radiant intensity Single pulse,tp = 20µs Ie Ie 100 mA =f(IF) OHR01551 10 -3 ΙF -210 10 -1 10 0 10 1 10 2 Ιe 100 mA eΙ -210 -110 010 110A A Max. permissible forward current IF = f(TA) OHR00883 FΙ 100 120 20 40 60 80 100 120 mA TA = 450 K/WthjAR Radiation characteristics SFH 416Irel= f(ϕ) OHR01553 100˚ 90˚ 80˚ 70˚ 60˚ 50˚ 0.2 0.4 0.6 0.8 1.0ϕ Radiation characteristics SFH 415Irel= f(ϕ) OHR01552 40 30 20 10 20 40 60 80 100 1200.40.60.81.0 ϕ 0.2 0.4 0.6 0.8 1.0 100 Permissible pulse handling capability IF = f(τ),TC = 25°C, duty cycleD = parameter t OHR00860 p -510 10 2 ΙF 10 3 10 4 DC 0.2 0.5 0.1 0.005 0.01 0.02 0.05 tp T ΙF tp TD = mA -410 -310 -210 -110 010 110 210s D =