SFH409 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process
  • High reliability
  • High pulse handling capability
  • Available in groups
  • Same package as SFH 309, SFH 487

Applications

  • Photointerrupters
  • IR remote control of various equipment Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. 1.8 1.2 6.3 5.9 (3.5) 4.1 3.9 5.2 4.5 2.54 mm spacing ø3.1 ø2.9 0.8 0.4 0.6 0.4 4.0 3.6 0.6 0.4 Approx. weight 0.3 g Chip position Area not flat GEX06250 0.7 0.4 Cathode Anode (SFH 487) (SFH 409) fex06250

Semiconductor Group 2 1997-11-01 SFH 409 Grenzwerte (TA = 25°C) Maximum Ratings Bezeichnung

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 55 ... + 100°C Sperrschichttemperatur Junction temperature Tj 100 °C Sperrspannung Reverse voltage VR 5V Durchlaßstrom Forward current IF 100 mA Stoßstrom,τ≤ 10 µs,D = 0 Surge current IFSM 3A Verlustleistung Power dissipation Ptot 165 mW Wärmewiderstand Thermal resistance RthJA 450 K/W Kennwerte (TA = 25°C) Characteristics Bezeichnung Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA,tp = 20 ms λpeak 950 nm Spektrale Bandbreite bei 50 % vonImax Spectral bandwidth at 50 % ofImax IF = 100 m A,tp = 20 ms Δλ 55 nm Abstrahlwinkel Half angle ϕ± 20 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm 2 Abmessungen der aktive Chipfläche Dimension of the active chip area L × B L × W 0.3× 0.3 mm Abstand Chipoberfläche bis Linsenscheitel Distance chip surface to lens top H 2.6 mm Kapazität,VR = 0 V Capacitance C o 25 pF

Semiconductor Group 3 1997-11-01 Gruppierung der StrahlstärkeIe in Achsrichtung gemessen bei einem RaumwinkelΩ = 0.01 sr Grouping of radiant intensityIe in axial direction at a solid angle ofΩ = 0.01 sr 1) Nur auf Anfrage lieferbar. 1) Available only on request. Schaltzeiten,Ie von 10 % auf 90 % und von 90 % auf 10 %, beiIF = 100 mA,RL = 50Ω Switching times,Ie from 10 % to 90 % and from 90 % to 10 %,IF = 100 mA,RL = 50Ω tr,tf 1 µs Durchlaßspannung Forward voltage IF = 100 mA,tp = 20 ms IF = 1 A,tp = 100µs VF VF 1.30(≤ 1.5) 1.9(≤ 2.5) V V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤1)µ A Gesamtstrahlungsfluß Total radiant flux IF = 100 mA,tp = 20 ms Φ e 15 mW Temperaturkoeffizient vonIe bzw.Φ e, IF = 100 mA Temperature coefficient ofIe orΦ e, IF = 100 mA TC I – 0.55 %/K Temperaturkoeffizient vonVF,IF = 100 mA Temperature coefficient of VF,IF = 100 mA TC V – 1.5 mV/K Temperaturkoeffizient vonλpeak,IF = 100 mA Temperature coefficient ofλpeak,IF = 100 mA TC λ + 0.3 nm/K Bezeichnung SFH 409 SFH 409-1 1) SFH 409-2 Strahlstärke Radiant intensity IF = 100 mA,tp = 20 ms IF = 1 A,tp = 100µs Ie Ie typ. ≥ 6.3 >1 0 120 mW/sr mW/sr Kennwerte (TA = 25°C) Characteristics Bezeichnung

Semiconductor Group 4 1997-11-01 SFH 409 Relative spectral emission Irel= f(λ) Forward current IF = f(VF), single pulse,tp = 20µs OHR01938 λ relΙ 880 920 960 1000 nm 1060 100 V OHR01041 F FΙ 110 010 -110 10 -2 A 1.5 2 2.5 3 3.5 4 V 4.5 max.typ. Radiant intensity Single pulse,tp = 20µs Permissible pulse handling capability IF = f(τ),TA = 25°C, duty cycleD = parameter Ie Ie 100 mA =f(IF) Ι OHR00864 F -110 10 -2 -1 10 010 A 10 1 10 0 mA)(100eΙ eΙ 10 1 τ OHR00865 -510 10 2 ΙF 10 3 10 4 DC 0.2 0.5 0.1 0.005 0.01 0.02 0.05 T ΙF TD = mA -410 -310 -210 -110 010 110 210s D = τ τ Max. permissible forward current IF = f(TA) OHR00883 FΙ 100 120 20 40 60 80 100 120 mA TA = 450 K/WthjAR Radiation characteristicsIrel= f(ϕ) OHR01887 02 0 40 60 80 100 1200.40.60.81.0 100 010203040 0.2 0.4 0.6 0.8 1.0ϕ