SFH407 SIEMENS | Alldatasheet
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SIEMENS AKTIENGESELLSCHAF 47E D MM 8235605 0027377 9 MMSIEG INFRARED EMITTER T-41-07 Package Dimensions in Inches (mm) 216 25 5 209 184 004 == if a 067 182 \\ N 17) Nee i | . gE am, aa oe TT 14.5 {al fo ae | 02S ANODE ee (00 5 ase 016 ag. Maximum Ratings ae Reverse Voltage (Vp). : 2. ev Nae E Forward Current (Ip). . 50mA. Raed Forward Current When Mounted in LWL Socket (I,), Tara 25°C) oe 100 ma Surge Current ip). 7100 ws : foe 200 mA Storage Temperature Range(T,). «= + —40to +80°C FEATURES unction Temperature (1) . soe Thermal Resistance * TO-46 Package Uunctionto-Ar Pane) « 750 KW i Junction-to-Arr When Inserted in ° Flat Epoxy Coating LWL Socket (Ryans) Lo -. 400 KW * 0.1” (2.54 mm) Lead Spacing Junctionto-Case (Rinss) . oo 225 KW © For Fiber Optic Communications Up to 5 MBit/s Characteristics (Tamp = 25°C) . Wavelength at Peak Emission, Ayes = 90020.m Two nonsty Ranges Syetl Sacnah sh pa nd Half-Life Radiant intensity in Gradient Profile Fiber with ‘SFH 407-3, 1.0 to 2.0 mWisr Core Diameter 63 pm, NA =02(I=1mWist,@, . 2a 5Oum,NA=O2(,=1mWist,® . : 125 xW Rise Time (10% to 90%}, = 100 mA), 1, 50ns Fall Time (90% 10 10%flp= 100A), t,.. . 40ns DESCRIPTION Bandvadth, 8 : . 7 MHz Forward Voltage (lp = 30 mA), Ve 122(s16)V ‘The SFH 407 GaAs diode emits radiation in the Reverse Current (Va=2V), In.» 0.01 (10) nA near infrared range. The radiation emitted is Capacitance Vq=0V), Cy + 38pF excited by current flowing in the forward direc- tion and can be modulated. This diode 1s partic- ularly noted for its high radiation ability. Group [2 Ts The SFH 407 is mounted in a TO-46 metal case Radiant Intensity, I, 063 101.25 101020 mwisr and is coated with epoxy resin. It is designed Radiant Flux (Radiant for applications in fiber optics communications Power) (Total Typ., by 30 47 mw up to 5 MBitis. Radiant power coupled into a stepped index ter, =200 um, NA =0.40m 60 (= 40) 90 (263) AW Raciant power coupled into a gradient index fiber, . $=50 ym, NA =02 7 aw 7-28
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