SFH401 SIEMENS | Alldatasheet
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SIEMENS AKTIENGESELLSCHAF 4?7E D MM 8235605 0027371 & MMSIEG GaAs INFRARED EMITTER T4\\- Package Dimensions in Inches (mm) 226.4 : 2467) o— it aos aa~. Ht V/ . V4 Vy o10 . 04) Bs a 110 ae 214 (535) FEATURES Maximum Ratings * Package: 18 A 3 DIN 41 876 (TO 18), Storage and Operating Temporature (Tyas Tog) nnenninennnrnneneenes BBC 1 +100°C Glass Lens, Hermeticalty Sealed, Solder beri dieiontaehs at et 2mm dete morc Tabs, Lead Spacing 2.54 mm (‘/x") cman btm) (5 56) * Anode Marking: Tab at Case Bottom from case botlom) (0 3 $06.) (Ty) nmrncntnninnnnnsnnnnnnsetnnnnnnssnne OC * Long Life Reverse VOlagE (V9) sntnnnnnnninnnninniinnnnnntnnnnniesnnennnssnnnnssne SM Forward Current (.) Ty 28°C san nsnninnnnsnnnnnneminnnennnsennnnnnsse SOO MA * Very High Radiant Intensity, ‘Surge Current (1S 10 ps, D=0) (1,,) susrntssssssuensnnenensemenennatisenennsenneeeneneeneee A, Narrow Beam Power Dissipation (Pra_) Te = 25°C esssessssesnntentstnnesnnesseseennerinnseieemnssesnsen 470. TW * High Pulse Power Thermal Resistance (Ryy,) sn nnnnsnnssnnininnnnsssinnnnnnnsnnnnnsesnsne SO KA © Two Radiant Intensity Ranges Rpg) ones innnensnnninnsmnnanmenmesnrnmnesnesses 160 KAM * Same Package as SFH 481 Characteristics (T,=25°C) Parameter Symbol Unit DESCRIPTION Wavelength at Peak Emission The GaAs infrared emitting diode SFH 401, {=100 mA, t,=20 ms) ean 960 £20 nm fabricated in a liquid phase epitaxy process, Spectral Bandwidth at 50% Of hig. features high efficiency and emits radiation (,=100 mA, t,=20 ms) a 255 nm at a wavelength in the near infrared range. Half Ange @ #15 Deg. The radiation is activated by de or pulse ‘Active Chip Area . A 025 mm operation in forward direction; simultaneous Dimensions of Active Chip Area baw 05 x05 mm modulation is possible. The cathode is Sathya, Maee'° Case Sutaco i 28-97 mm electrically connected to the case. (letom 10% to 90%, The applications include light-reflecting and from 90% to 10%, |, =100 mA) hel 1 mr switches for steady and varying intensity, Capacitance (V,=0 V, f=1 MHz) c, 40 pF IR-remote control, industrial electronics, Forward Voltage “measuring and controlling”. (= 100 mA) y, 1.30 (s1.5) v Breakdown Voltage ({,=10 A) Vou 30 (25) v . Reverse Current (V,=5 V) l, 0.01(s1) WA Temperature Coefficient of |, oF 1G, -055 6K ‘Temperature Coefficient of V, Te, 18 mViK . Temperature Cootficient of dye, To, 03 am Radiant intensity |, In Axial Direction at a Storadian © 20.01 sr or 6.5 degrees fT sree T senders [ srnaoi4 [| (=100 mA, =20 ms) i | 10-20 >25 TiWist (L=1A, t= 100 ps) I 100 225 mist Radiant Flux (total) 7-22
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