SFH320 SIEMENS | Alldatasheet
Document overview
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Technical content
Features
- Especially suitable for applications from 380 nm to 1150 nm (SFH 320) and of 880 nm (SFH 320 FA)
- High linearity
- P-LCC-2 package
- Available in groups
- Suitable for all soldering methods
Applications
- Miniature photointerrupters
- punched tape readers
- Industrial electronics
- For control and drive circuits SFH 320 SFH 320 FA 01.97
Typ (*vorher) Type (*formerly) Bestellnummer Ordering Code SFH 320 Q62702-P0961 SFH 320 FA (*SFH 320 F) Q62702-P0988 SFH 320-3 Q62702-P390 SFH 320 FA-3 (*SFH 320 F-3) Q62702-P393 SFH 320-4 Q62702-P1606 SFH 320 FA-4 (*SFH 320 F-4) Q62702-P1607 Bezeichnung
Description
Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 55 ... + 100°C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 15 mA Kollektorspitzenstrom,τ <10 µs Collector surge current ICS 75 mA Verlustleistung,TA = 25°C Total power dissipation Ptot 165 mW Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb RthJA 450 K/W
Kennwerte (TA = 25°C, λ = 950 nm) Characteristics Bezeichnung Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 860 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % vonSmax Spectral range of sensitivity S = 10 % ofSmax Bestrahlungsempfindliche Fläche (∅ 240 µm) Radiant sensitive area A 0.045 0.045 mm 2 Abmessung der Chipfläche Dimensions of chip area L × B L × W 0.45× 0.45 0.45 × 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface Halbwinkel Half angle ϕ± 60 ± 60 Grad deg. Kapazität,VCE = 0 V,f = 1 MHz,E = 0 Capacitance C CE 5.0 5.0 pF Dunkelstrom Dark current VCE = 25 V,E = 0 ICEO 1 (≤ 200) 1 ( ≤ 200) nA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1) IPCEmin is the min. photocurrent of the specified group Bezeichnung -2 -3 -4 Fotostrom,λ =950 nm Photocurrent Ee = 0.1 mW/cm2,VCE = 5 V SFH 320: Ev = 1000 Ix, Normlicht/standard light A,VCE = 5 V IPCE IPCE ≥ 16 16 ... 32 420 25 ... 50 650 ≥ 40 1000 µA µA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA,VCC = 5 V,RL = 1 kΩ tr, tf 76 7 8 µs Kollektor-Emitter- Sättigungsspannung Collector-emitter saturation voltage IC =IPCEmin 1)× 0.3, Ee = 0.1 mW/cm2 VCEsat 150 150 150 150 mV Directional characteristicsSrel= f (ϕ)
Relative spectral sensitivity, SFH 320 Srel= f (λ) Total power dissipation Ptot =f (TA) Dark current ICEO =f (TA),VCE = 5 V, E = 0 Relative spectral sensitivity,SFH 320 FA Srel= f (λ) Photocurrent IPCE = f (VCE ),Ee = Parameter Capacitance C CE = f (VCE ), f = 1 MHz,E = 0 Photocurrent IPCE = f (Ee),VCE = 5 V Dark current ICEO =f (VCE ),E = 0 Photocurrent IPCE /IPCE25 o =f (TA),VCE = 5 V