SFH314 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA)
  • High linearity
  • 5 mm plastic package

Applications

  • Computer-controlled flashes
  • Photointerrupters
  • Industrial electronics
  • For control and drive circuits SFH 314 SFH 314 FA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. 5.9 5.5 0.6 0.4 ø5.1 ø4.8 2.54 mm spacing 5.7 5.5 6.9 6.1 4.0 3.4 29.5 27.5 1.8 1.2 0.8 0.4 Area not flat 0.6 0.4 Cathode (Diode) Chip position GEX06630 Approx. weight 0.4 g Collector (Transistor) feof6652 feo06652

Semiconductor Group 2 1997-11-27 Grenzwerte Maximum Ratings Typ Type Bestellnummer Ordering Code SFH 314 SFH 314-2 SFH 314-3 Q62702-P1668 Q62702-P1755 Q62702-P1756 SFH 314 FA SFH 314 FA-2 SFH 314 FA-3 Q62702-P1675 Q62702-P1757 Q62702-P1758 Bezeichnung

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 55 ... + 100°C Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s TS 260 °C Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom t ≤ 3 s TS 300 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 70 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, τ < 10 µs Collector surge current ICS 100 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7V Verlustleistung, TA = 25 °C Total power dissipation Ptot 200 mW Wärmewiderstand Thermal resistance RthJA 375 K/W

Semiconductor Group 3 1997-11-27 SFH 314 SFH 314 FA Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 870 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.55 0.55 mm 2 Abmessung der Chipfläche Dimensions of chip area L × B L × W 1 × 11 × 1m m × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface Halbwinkel Half angle ϕ± 40 ± 40 Grad deg. Kapazität, VCE = 0 V, f = 1 MHz, E = 0 Capacitance C CE 15 15 pF Dunkelstrom Dark current VCE = 10 V, E = 0 ICEO 10 (≤ 200) 10 ( ≤ 200) nA Fotostrom, Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V IPCE IPCE ≥ 0.63 ≥ 0.63 mA mA

Semiconductor Group 4 1997-11-27 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1) IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f (ϕ) Bezeichnung -1 -2 -3 -4 Fotostrom, λ = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 314: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V IPCE IPCE 3.4 1. . .2 5.4 8.6 ≥ 2.5 13.5 mA mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 81 0 1 2 1 4 µs Kollektor-Emitter- Sättigungsspannung Collector-emitter saturation voltage IC = IPCEmin 1) × 0.3, Ee = 0.5 mW/cm2 VCEsat 150 150 150 150 mV OHF02329 02 0 40 60 80 100 1200.40.60.81.0 100 010203040 0.2 0.4 0.6 0.8 1.0ϕ

Semiconductor Group 5 1997-11-27 SFH 314 SFH 314 FA TA = 25 °C, λ =950 nm Rel. spectral sensitivity SFH 314Srel= f (λ) PhotocurrentIPCE =f (TA), VCE = 5 V, normalized to 25oC Photocurrent IPCE = f (VCE ), Ee = parameter λ OHF02332 relS 400 100 500 600 700 800 900 nm 1100 T OHF01524 A -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 ΙPCE PCEΙ 25 C V OHF02338 CE PCEΙ 10 0 -110 10 20 30 40 50 V 70 10 1 mA 0.5 mW cm 2 2cm mW1 2cm mW0.25 0.1 mW cm 2 Rel. spectr.sensitivity SFH 314 FA,Srel= f(λ) Photocurrent IPCE = f (Ee),VCE = 5 V Total power dissipation Ptot= f (TA) λ OHF02331 relS 400 100 500 600 700 800 900 nm 1100 E OHF02339 e PCEΙ 10 0 -210 10 -1 110 mA 10 -3 -210 010mW/cm 210 -3 T OHF02340 A totP 0 20 40 60 80 ˚C 100 100 150 200 250 mW Dark currentICEO = f (VCE ), E= 0 Collector-emitter capacitance C CE = f (VCE ),f= 1 MHz Dark current ICEO = f (TA), VCE = 10 V,E = 0 V OHF02341 CE CEOΙ -210 10 -1 10 0 10 1 10 2 nA 10 20 30 40 50 70 V V OHF02344 CE CEC 10 -2 -110 010 110 10 2V pF T OHF02342 A CEOΙ -210 10 -1 10 0 10 1 10 2 nA 20 40 60 80 100 ˚C