SFH310 SIEMENS | Alldatasheet

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Technical content

Features

l Especially suitable for applications from 400 nm to 1100 nm (SFH 310) and of 880 nm (SFH 310 FA) l High linearity l 3 mm plastic package

Applications

l For control and drive circuits SFH 310 SFH 310 FA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified 0.4 0.6 3.1 3.4 Area not flat 5.7 6.1 ø2.7 ø2.9 4.8 4.4 3.7 3.5 27.0 29.0 spacing 2.54 mm 0.8 0.4 0.4 0.7 0.4 0.6 1.2 1.8 GEX06710 0.9 1.1 Collector/ 2.1 2.7 Chip position Cathode feof6653 feo06653 03.96

Semiconductor Group 2 1998-07-13 SFH 310 SFH 310 FA Grenzwerte Maximum Ratings Typ Type Bestellnummer Ordering Code SFH 310 SFH 310-2 SFH 310-3 Q62702-P874 on request on request SFH 310 FA SFH 310 FA-2 SFH 310 FA-3 Q62702-P1673 on request on request Bezeichnung

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 55 ... + 100°C Löttemperatur bei Tauchlötung Lötstelle ‡ 2 mm vom Gehäuse, Lötzeit t £ 5 s Dip soldering temperature ‡ 2 mm distance from case bottom, soldering time t £ 5 s TS 260 °C Löttemperatur bei Kolbenlötung Lötstelle ‡ 2 mm vom Gehäuse, Lötzeit t £ 3 s Iron soldering temperature ‡ 2 mm distance from case bottom, soldering time t £ 3 s TS 300 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 70 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, t < 10 ms Collector surge current ICS 100 mA Verlustleistung, TA = 25 °C Total power dissipation Ptot 165 mW Wärmewiderstand Thermal resistance RthJA 450 K/W

Semiconductor Group 3 1998-07-13 SFH 310 SFH 310 FA Kennwerte (TA = 25 °C, l = 950 nm) Characteristics Bezeichnung Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity lS max 780 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.19 0.19 mm 2 Abmessung der Chipfläche Dimensions of chip area L · B L · W 0.65· 0.65 0.65 · 0.65 mm · mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface Halbwinkel Half angle j– 25 – 25 Grad deg. Kapazität, VCE = 0 V, f = 1 MHz, E = 0 Capacitance C CE 10 10 pF Dunkelstrom Dark current VCE = 10 V, E = 0 ICEO 5 (£ 100) 5 ( £ 100) nA Fotostrom Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V IPCE IPCE ‡ 0.4 ‡ 0.4 mA mA

Semiconductor Group 4 1998-07-13 SFH 310 SFH 310 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1) IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f (j) Bezeichnung -1 -2 -3 -4 Fotostrom, l = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 310: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V IPCE IPCE 2.1 3.4 5.4 ‡ 1.6 8.6 mA mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kW tr, tf 57 81 2 ms Kollektor-Emitter- Sättigungsspannung Collector-emitter saturation voltage IC = IPCEmin 1) · 0.3, Ee = 0.5 mW/cm2 VCEsat 150 150 150 150 mV

Semiconductor Group 5 1998-07-13 SFH 310 SFH 310 FA TA = 25°C, l = 950 nm Rel.spectr. sensitivity SFH 310, Srel = f (l) Total power dissipation Ptot = f (TA) Dark current ICEO = f (TA), VCE = 10 V, E = 0 OHF00871 totP 120 160 mW 200 20 40 60 80 ˚C 100 TA Rel. spectr. sensitivity SFH 310FA,Srel=f (l) Photocurrent IPCE = f (VCE ), Ee = Parameter Capacitance C CE = f (VCE ), f = 1 MHz l OHF02331 relS 400 600 800 1000 1200 100 nm Photocurrent, IPCE = f (Ee), VCE = 5 V Dark current ICEO = f (VCE ), E = 0 Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 oC T OHF01524 A -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 IPCE PCEI 25 C