SFH305 SIEMENS | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Especially suitable for applications from 460 nm to 1060 nm
- High linearity
- Mini-package
- Available in groups
Applications
- Miniature photointerrupters
- Punched tape reading
- Industrial electronics
- For control and drive circuits SFH 305 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified feo06137 10.95
Description
Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 40 ... + 80 °C Löttemperatur bei Tauchlötung Lötstelle≥ 2 mm vom Gehäuse, Lötzeitt≤ 5 s Dip soldering temperature≥ 2 mm distance from case bottom, soldering time t≤ 5 s TS 230 °C Löttemperatur bei Kolbenlötung Lötstelle≥ 2 mm vom Gehäuse, Lötzeitt≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering timet≤ 3 s TS 300 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 32 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom,τ <10 µs Collector surge current ICS 200 mA Verlustleistung,TA = 25°C Total power dissipation Ptot 70 mW Wärmewiderstand Thermal resistance RthJA 950 K/W Kennwerte (TA = 25°C, λ = 950 nm) Characteristics Bezeichnung Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % vonSmax Spectral range of sensitivity S = 10 % ofSmax λ 460 ... 1060 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.17 mm 2
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1) IPCEmin is the min. photocurrent of the specified group Abmessung der Chipfläche Dimensions of chip area L × B L × W 0.6× 0.6 mm × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface Halbwinkel Half angle ϕ± 16 Grad deg. Kapazität Capacitance VCE = 0 V,f = 1 MHz,E = 0 C CE 5.5 pF Dunkelstrom Dark current VCE = 25 V,E = 0 ICEO 3 (≤ 20) nA Bezeichnung -2 -3 Fotostrom,λ =950 nm Photocurrent Ee = 0.5 mW/cm2,VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V IPCE IPCE 1.4 2.2 mA mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA,VCC = 5 V,RL = 1 kΩ tr, tf 5.5 6 µs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC =IPCEmin 1)× 0.3, Ee = 0.5 mW/cm2 VCEsat 150 150 mV Kennwerte (TA = 25°C, λ = 950 nm) Characteristics (cont’d) Bezeichnung
Relative spectral sensitivity Srel= f (λ) PhotocurrentIPCE /IPCE25 o =f (TA), VCE = 5 V Photocurrent I PCE = f (Ee),VCE = 5 V Collector-emitter capacitance C CE = f (VCE ),f= 1 MHz,E = 0 Total power dissipation Ptot =f (TA) Dark current ICEO = f (TA), VCE = 25 V, E = 0 Directional characteristicsSrel= f (ϕ)