SFH302 SIEMENS | Alldatasheet
Document overview
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Technical content
Features
- Especially suitable for applications from 450 nm to 1100 nm
- High linearity
- TO-18, base plate, transparent exposy resin lens, with base connection
- Available in groups
Applications
- Photointerrupters
- Industrial electronics
- For control and drive circuits SFH 302 Typ Type Bestellnummer Ordering Code SFH 302 Q62702-P1641 SFH 302-2 Q62702-P1623 SFH 302-3 Q62702-P1624 SFH 302-4 Q62702-P1625 SFH 302-5 Q62702-P1626 SFH 302-6 Q62702-P1627 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified fet06017 10.95
Description
Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 40 ... + 80 °C Löttemperatur bei Tauchlötung Lötstelle≥ 2 mm vom Gehäuse, Lötzeitt≤ 5 s Dip soldering temperature≥ 2 mm distance from case bottom, soldering time t≤ 5 s TS 260 °C Löttemperatur bei Kolbenlötung Lötstelle≥ 2 mm vom Gehäuse, Lötzeitt≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering timet≤ 3 s TS 300 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 50 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom,τ <10 µs Collector surge current ICS 200 mA Emitter-Basisspannung Emitter-base voltage VEB 7V Verlustleistung,TA = 25°C Total power dissipation Ptot 150 mW Wärmewiderstand Thermal resistance RthJA 450 K/W
Kennwerte (TA = 25°C, λ = 950 nm) Characteristics Bezeichnung Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % vonSmax Spectral range of sensitivity S = 10 % ofSmax λ 450 ... 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.675 mm 2 Abmessung der Chipfläche Dimensions of chip area L × B L × W 1 × 1m m × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface Halbwinkel Half angle ϕ± 50 Grad deg. Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2,VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V IPCB IPCB 4.2 12.5 µA µA Kapazität Capacitance VCE = 0 V,f = 1 MHz,E = 0 VCB = 0 V,f = 1 MHz,E = 0 VEB = 0 V,f = 1 MHz,E = 0 C CE C CB C EB pF pF pF Dunkelstrom Dark current VCE = 10 V,E = 0 ICEO 20 (≤ 200) nA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe 1) IPCEmin is the min. photocurrent of the specified group Bezeichnung Fotostrom,λ =950 nm Photocurrent Ee = 0.5 mW/cm2,VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A VCE = 5 V IPCE IPCE 1.75 2.8 1 ... 2 4.5 7.1 ≥ 2.5 9.5 mA mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA,VCC = 5 V,RL = 1 kΩ tr, tf 91 1 1 4 1 7 2 0 µs Kollektor-Emitter- Sättigungsspannung Collector-emitter saturation voltage IC =IPCEmin 1)× 0.3, Ee = 0.5 mW/cm2 VCEsat 200 200 200 200 200 mV Stromverstärkung Current gain Ee = 0.5 mW/cm2,VCE = 5 V IPCE IPCB 140 230 360 570 750
Relative spectral sensitivity Srel= f (λ) Output characteristics IC =f (VCE ),IB = Parameter Photocurrent IPCE = f (Ee),VCE = 5 V Total power dissipation Ptot =f (TA) Directional characteristics Srel= f (ϕ)