SFH248 SIEMENS | Alldatasheet
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SIEMENS AKTIENGESELLSCHAF 4Y?E D MM 8235605 0027485 1 MBSIEG TFa4i-Sl WITH DAYLIGHT FILTER SFH 248F SILICON DIFFERENTIAL PHOTODIODE Ba ot ARN Package Dimensions in inches (mm) 5: Sees OMe eat ist x ty) [aval FEATURES Maximum Ratings * High Reliability Reverse Voltage (Vp) 10V . Storage and Operating Temperature 40 to +80°C Low Noise Soldenng Temperature in a 2 mm Distance * High Open-Circuit Voltage as trom the Case Bottom (t < 3 s} (ts) 230°C Photovoltaic Cells Power Dissipation (Pia) 50 mW * Detector For Low Illuminance Characteristics (Temp = 25°C) aracteristics (Tam = Short Switching Time Symbol SFH248 = SFH248F Unit * Low Capacitance Spectral Sensitivity : , (Ve = BV Note 1) S 24218) nic High Spectral Sensitivity Spectral Sensitivity * Cathode Marking: Middle Solder Tab Wn =S¥. = 980 0m s 15028 mn * Suitable for Use in the Visible Light vwaeiength of Max = and Near Infrared Range Sensitivity Yemax 850 950 nm ge of * Daylight Filter Option, SFH248F Sree ice ata (S = 10% of Smax) a 43010 1150 800 to 1150 nm Radiant Sensitive Area A 154 154 mm? Dimensions of the DESCRIPTION Radiant Senstwve Area Lew 07x22 07x22 mm SFH248 and SFH248F are silicon differential Distance Between Chip Surace photodiodes fabricated in planar technology. nar ange me suace ° 460 +60 oeo The devices are packaged in a plastic case Dark Current (Vq = 10 V) Ip 100 (<200) 100 (<200) nA : similar to a TO92. The terminals are solder Spectral Senstivty tabs with 01” (254 mm) lead spacing. These Q = 850 nm) S 085 055 fe. fone photodetectors can be used as photodiodes ouantum Yield = Electrons _ with reverse voltage or as photovoltaic cells Ot reavoiege , 080 0% Proton Applications include edge control, path and (€, = 1000 ix Note 1) Vo 390(2320) mv corner scanning, industrial electronics, SS Gia Conan» S800) Vo 340 (2260) my measunng and controlling devices te, = 1000 i Note 1) ie AC218) aA {Ey = 05 mviem? d +950 nm) i 75(24) WA Fise’and Fall Time of the Photocurtent Irom 1096 to 90% and from 9096 lo 1096 ofthe Final Value (RL=19 V_=0V = 830 nm, I, = 20 pA) tel 500 500 ns Forward Voltage (lz = 100 mA, E, = 0 Tama = 25°C) Ve 13 13 v Capacitance WVqarOVt=1MHZEy=0%) Cy 40 40 pe Wa=10V,t=1MHZEy=0b) Cio 10 10 pF ‘Temperature Coefficient Vo TC, -26 -26 mvik Temperature Coefficient 15 Te 018 ow’ Silk “The sence indcated ler o ntlered radabon ofa tunglen amen amp at 2 coor temperature a 2866 K fSlonaarabght Am accordance wit DIN 9098 and IEC put 2061) 8-78
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