SFH229

SFH229 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

• Especially suitable for applications from 380 nm to 1100 nm (SFH 229) and of 880 nm (SFH 229 FA)
• Short switching time (typ. 10 ns)
• 3 mm LED plastic package
• Also available on tape

Applications

• Photointerrupters
• Industrial electronics
• For control and drive circuits Typ (*vorher) Type (*formerly) Bestellnummer Ordering Code SFH 229 Q62702-P215 SFH 229 FA (*SFH 229 F) Q62702-P216 SFH 229 SFH 229 FA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. feof6447 feo06447 01.97

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 55 ... + 100°C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeitt≤ 3 s) Soldering temperature in 2 mm distance from case bottom ( t≤ 3 s) TS 230 °C Sperrspannung Reverse voltage VR 20 V Verlustleistung Total power dissipation Ptot 150 mW Kennwerte (TA = 25°C) Characteristics Bezeichnung VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V,λ = 950 nm,Ee = 1 mW/cm2 S S 28 (≥ 18) 20 (≥ 10.8) nA/Ix µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 860 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % vonSmax Spectral range of sensitivity S = 10 % ofSmax Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.3 0.3 mm 2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L × B L × W 0.56× 0.56 0.56 × 0.56 mm × mm Abstand Chipoberfläche zu Gehäuse- oberfläche Distance chip front to case surface

ϕ± 17 ± 17 Grad deg. Dunkelstrom,VR = 10 V Dark current IR 50 (≤ 5000) 50 (≤ 5000) pA Spektrale Fotoempfindlichkeit,λ = 850 nm Spectral sensitivity Sλ 0.62 0.60 A/W Quantenausbeute,λ = 850 nm Quantum yield η 0.90 0.88 Electrons Photon Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2,λ = 950 nm VO VO 450 (≥ 400) 420 (≥ 370) mV mV Kurzschlußstrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2,λ = 950 nm ISC ISC µA µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50Ω; VR = 10 V;λ = 850 nm;Ip = 800µA tr,tf 10 10 ns Durchlaßspannung,IF = 100 mA,E = 0 Forward voltage VF 1.3 1.3 V Kapazität,VR = 0 V,f= 1 MHz,E = 0 Capacitance C 0 13 13 pF Temperaturkoeffizient vonVO Temperature coefficient of VO TC V – 2.6 – 2.6 mV/K Temperaturkoeffizient vonISC Temperature coefficient ofISC Normlicht/standard light A λ = 950 nm TC I 0.18 0.2 %/K Kennwerte (TA = 25°C) Characteristics (cont’d) Bezeichnung

Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V,λ = 850 nm NEP 6.5× 10– 15 6.5× 10– 15 W √Hz Nachweisgrenze,VR = 10 V,λ = 850 nm Detection limit D* 8.4 × 1012 8.4× 1012 cm ·√Hz W Kennwerte (TA = 25°C) Characteristics (cont’d) Bezeichnung Directional characteristicsSrel= f (ϕ)

Relative spectral sensitivitySrel= f (λ) SFH 229 PhotocurrentIP = f (Ee),VR = 5 V Open-circuit voltageVO = f (Ee) SFH 229 FA Capacitance C =f (VR ),f = 1 MHZ,E = 0 Relative spectral sensitivitySrel= f (λ) SFH 229 FA Total power dissipation Ptot= f (TA) Dark current IR =f (TA),VR = 10 V,E = 0 PhotocurrentIP = f (Ev),VR = 5 V Open-circuit voltageVO = f (Ev) SFH 229 Dark current IR =f (VR ),E = 0