SFH225FA SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Especially suitable for applications of 880 nm
  • Short-switching time (typ. 20 ns)
  • 5 mm LED plastic package
  • Also available on tape

Applications

  • IR-remote control of hi-fi and TV sets, video tape recorders, dimmers, remote control of various equipment
  • Photointerrupters Typ (*vorher) Type (*formerly) Bestellnummer Ordering Code SFH 225 FA (*SFH 225) Q62702-P1051 SFH 225 FA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. feo06422

Semiconductor Group 2 1998-04-20 Grenzwerte Maximum Ratings Bezeichnung

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 ... + 80 °C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t £ 3 s) Soldering temperature in 2 mm distance from case bottom (t £ 3 s) TS 230 °C Sperrspannung Reverse voltage VR 20 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 °C, l = 870 nm) Characteristics Bezeichnung VR = 5 V, Ee = 1 mW/cm2 S 34 (‡ 25) mA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity lS max 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax l 740 ... 1120 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 4.84 mm 2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L · B L · W 2.20· 2.20 mm · mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface Halbwinkel Half angle j– 60 Grad deg.

Semiconductor Group 3 1998-04-20 Dunkelstrom, VR = 10 V Dark current IR 2 (£ 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity Sl 0.63 A/W Quantenausbeute Quantum yield h 0.90 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 330 (‡ 250) mV Kurzschlußstrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 17 mA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 W; VR = 5 V; l = 850 nm; Ip = 800 mA tr, tf 20 ns Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C 0 48 pF Temperaturkoeffizient von VO Temperature coefficient of VO TC V – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TC I 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 3.6· 10– 14 W ÖHz Nachweisgrenze, VR = 10 V Detection limit D* 6.1 · 1012 cm ·ÖHz W Kennwerte (TA = 25 °C, l = 870 nm) Characteristics (cont’d) Bezeichnung

Semiconductor Group 4 1998-04-20 Relative spectral sensitivity Srel = f (l) Dark current IR = f (VR ), E = 0 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) Capacitance C = f (VR ), f = 1 MHz, E = 0 Total power dissipation Ptot = f (TA) Dark current IR = f (TA), VR = 10 V, E = 0 l OHF01430 400 relS 0 600 800 1000 nm 1200 100 OHF00080 IR RV 0 5 10 15 V 20 1000 2000 3000 4000 pA E OHF01056 e 010 PI -110 10 1 10 2 10 4 10 0 10 1 10 2 10 34 10 310 210 110 10 0 VO m Am V IP VO 2W/cmm T OHF00398 A totP 0 20 40 60 80 ˚C 100 mW 100 120 140 160 T OHF00082 A -110 0 RI 10 0 10 1 10 2 10 3 nA 20 40 60 80 ˚C 100 Directional characteristics Srel = f (j) OHF01402 40 30 20 10 20 40 60 80 100 1200.40.60.81.0 j 0.2 0.4 0.6 0.8 1.0 100