SFH214 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Especially suitable for applications from 400 nm to 1100 nm (SFH 214) and of 880 nm (SFH 214 FA)
- Short switching time (typ. 5 ns)
- 5 mm LED plastic package
- Also available on tape
Applications
- Industrial electronics
- For control and drive circuits
- Photointerrupters
- Fiber optic transmission systems 03.96
Description
Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 55 ... + 100°C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeitt≤ 3 s) Soldering temperature in 2 mm distance from case bottom ( t≤ 3 s) TS 300 °C Sperrspannung Reverse voltage VR 50 V Verlustleistung Total power dissipation Ptot 100 mW Kennwerte (TA = 25°C) Characteristics Bezeichnung VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V,λ = 870 nm,Ee = 1 mW/cm2 S S 45 (≥ 30) 25 (≥ 20) nA/Ix µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % vonSmax Spectral range of sensitivity S = 10 % ofSmax Bestrahlungsempfindliche Fläche Radiant sensitive area A 11 m m 2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L × B L × W 1 × 11 × 1m m × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface
ϕ± 40 ± 40 Grad deg. Dunkelstrom,VR = 20 V Dark current Spektrale Fotoempfindlichkeit,λ = 850 nm Spectral sensitivity Sλ 0.62 0.59 A/W Quantenausbeute,λ = 850 nm Quantum yield η 0.89 0.86 Electrons Photon Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2,λ = 870 nm VO VO 380 (≥ 300) 340 (≥ 290) mV mV Kurzschlußstrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2,λ = 870 nm ISC ISC µA µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50Ω; VR = 20 V;λ = 850 nm;Ip = 800µA tr,tf 55 n s Durchlaßspannung,IF = 80 mA,E = 0 Forward voltage VF 1.3 1.3 V Kapazität,VR = 0 V,f= 1 MHz,E = 0 Capacitance C 0 11 11 pF Temperaturkoeffizient vonVO Temperature coefficient of VO TC V – 2.6 – 2.6 mV/K Temperaturkoeffizient vonISC Temperature coefficient ofISC Normlicht/standard light A λ = 870 nm TC I 0.18 0.2 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V,λ = 850 nm NEP 2.9× 10– 14 2.9× 10– 14 W √Hz Nachweisgrenze,VR = 20 V,λ = 850 nm Detection limit D* 3.5 × 1012 3.5× 1012 cm ·√Hz W Kennwerte (TA = 25°C) Characteristics (cont’d) Bezeichnung
Relative spectral sensitivity SFH 214 Srel= f (λ) PhotocurrentIP = f (Ee),VR = 5 V Open-circuit voltageVO = f (Ee) SFH 214 FA Relative spectral sensitivity SFH 214 FA S rel= f (λ) Total power dissipation Ptot= f (TA) PhotocurrentIP = f (Ev),VR = 5 V Open-circuit voltageVO = f (Ev) SFH 214 Dark current IR =f (VR ),E = 0 Directional characteristicsSrel= f (ϕ)