SFH207 SIEMENS | Alldatasheet

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SIEMENS AKTIENGESELLSCHAF 4?E D Ml 8235605 O0274b5 b MMSTEG SILICON PIN PHOTODIODE F453 Package Dimensions mm 239 4 Circuit diagram = 28.781 op, 10, “git “ es A Srl Sealing, ‘ - PC board. << -% 74 —> y 026 58 $12 Photosensitive area 022 45 008 — 9,69 x 9,69 mm FEATURES Maximum Ratings Package: Chip on PC Board, Operating Temperature Range (Tog)... oss ssctstnssnis seestne sneer nseeenesees AO%C 10 480°C Fully Encapsulated Storage Temperature RANGE (Tyg) «2:6 = os sme messin ut nesses ne OC 10 480°C Reverse Vollage (Vp) svinsinnnnmnnniissuninnninninnininins sunnrinnnnsinsennnsnes YN * High Rellabllity Total Power Dissipation (Phy) sve sos siessnnnstenene ne ae nee sane ene we 100 TW No Testable Degradation * Low Nolse Characteristics (T,=25°C) * High Open-Circult Voltage at Voltaic Parameter Symbol Unit Cat Operation recs emndard light A, T=2856 K) s 850 (2750) nA /a=5V, st light A, T= © High Cut-Off Frequency Wavelength of Maximum Sensitivity Yo 850 nm * Short Switching Time ‘Spectral Range of Photosensitivity Low (S=10% of S,,.) a 400 - 1100 nm : Capacitance Radiant Sensitive Area A 93.9 mm? Good Linearity Dimensions of Radiant Sensitive Area LxB 9.69 x 9.69 mm x mm * High Photosensitivity Distance Chip Surface to Case Surface H 05-07 mm Half Angle ° 260 Deg ° Wide Temperature Range Dark Current (V,=10 V, E=0) if 30 (5200) nA * Sultable for the Visible and the Near ‘Spectral Sensitivity (4=850 nm) s 06 AW Infrared Range ‘Quantum Efficiency @=850 nm) n 088 electrons holon ‘Open-Circuit Voltage DESCRIPTION (Ej=1000 Ix, slandard light A, T=2856 K) Vq 370 (2300) mv " Short-Crcuit Current The SFH 207 is a silicon photodiode = fabricated in planar PIN technology. The Reser nd Hat A T= 2558 le 810 @750) ma silicon material used results in a positive (R=50 0, V,_ =15 V, 4=830 nm, front and negative back contact. These lpimy het 2 ne photodetectors can be used as a diode Forward Voltage (with reverse voltage) as well as a (=100 mA, E=0) vy, 12 v voltaic cell. Capacitance (V,=0 V, f=1 MHz, E=0) c 950 pF Applications include industrial electronics, iniuieredvaainans 1, 26 nv measurement and control. Tempore Soetheient of ‘ (standard light A) = Te, 02 +i Noise Equivalent Power (V,=10 V, A=850 nm) NEP 163 x 103 WAZ Detection Limit (V,=10 V, A=850 nm) D 594 x 10? omVHzW 8-58

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