SFH205 SIEMENS | Alldatasheet
Document overview
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Technical content
Features
l Especially suitable for applications of 950 nm l Short switching time (typ. 20 ns) l 5 mm LED plastic package l Also available on tape
Applications
l IR-remote control of hi-fi and TV sets, video tape recorders, dimmers, remote control of various equipment l Light reflecting switches for steady and varying intensity SFH 205 SFH 206 Ma be in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ (* ab 4/95) Type (* as of 4/95) Bestellnummer Ordering Code Gehäuse Package SFH 205 (* SFH 205 F) Q62702-P102 10 A3 DIN 41868 (TO-92-ähnlich), schwarzes Epoxy-Giebharz, Lötspiebe im 2.54-mm-Raster (1/10), Kathodenkennzeichnung: Gehäusekerbe
10 A3 DIN 41 868 (similar to TO-92), black epoxy
resin, solder tabs 2.54 (1/10) lead spacing, cathode marking: notch at package SFH 206 (* SFH 206 F) Q62702-P128 Bezeichnung
Description
Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg –55 ... +80 oC Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeitt£ 3s) Soldering temperature in 2 mm distance from case bottom (t£ 3s) T S 230 oC Sperrspannung Reverse voltage VR 32 V Verlustleistung,TA = 25oC Total power dissipation Ptot 150 mW Kennwerte (TA = 25oC, l = 950 nm) Characteristics Bezeichnung V R = 5 V,Ee = 0.5 mW/cm2 S 25 (‡ 15) mA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity lS max 950 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% vonSmax Spectral range of sensitivity S = 10% ofSmax l 800 ... 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.00 mm 2
Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L x B L x W 2.65 x 2.65 mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip surface to case surface SFH 205 SFH 206 H H mm mm Halbwinkel Half angle j– 60 Grad deg. Dunkelstrom,V R = 10 V Dark current IR 2 (£ 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity Sl 0.59 A/W Quantenausbeute Quantum yield h 0.77 Electrons Photon Leerlaufspannung,Ee = 0.5 mW/cm2 Open-circuit voltage VL 330 (‡ 250) mV Kurzschlubstrom,Ee = 0.5 mW/cm2 Short-circuit current IK 25 mA Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 50W; VR = 5 V;l = 850 nm;Ip = 800mA tr,tf 20 ns Durchlabspannung,IF = 100 mA,E = 0 Forward voltage VF 1.3 V Kapazität,VR = 0 V,f= 1 MHz,E = 0 Capacitance C 0 72 pF Temperaturkoeffizient vonVL Temperature coefficient of VL TC V –2.6 mV/K Temperaturkoeffizient vonIK, Temperature coefficient ofIK TC I 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V NEP 4.3 x 10–14 W ÖHz Nachweisgrenze,VR = 10 V Detection limit D* 6.2 x 10 12 cm ·ÖHz W Kennwerte (TA = 25oC, l = 950 nm) Characteristics Bezeichnung
Relative spectral sensitivity Srel= f (l) Dark current IR = f (VR ),E = 0 PhotocurrentIP = f (Ee),VR = 5 V Open-circuit-voltageVL= f (Ee) Capacitance C = f (VR ),f = 1 MHz,E = 0 Total power dissipationPtot= f (TA) Dark current IR = f (TA),VR = 10 V,E = 0 Directional characteristicsSrel= f (j)