SFH205FA SIEMENS | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • Especially suitable for applications of 880 nm
  • Short switching time (typ. 20 ns)
  • 5 mm LED plastic package
  • Also available on tape

Applications

  • IR-remote control of hi-fi and TV sets, video tape recorders, dimmers, remote control of various equipment
  • Photointerrupters SFH 205 FA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. feof6647 Typ Type Bestellnummer Ordering Code SFH 205 FA Q62702-P1677

Semiconductor Group 2 1998-03-17 Grenzwerte Maximum Ratings Bezeichnung

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 55 ... + 100°C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeitt£ 3 s) Soldering temperature in 2 mm distance from case bottom ( t£ 3 s) TS 230 °C Sperrspannung Reverse voltage VR 32 V Verlustleistung,TA = 25°C Total power dissipation Ptot 150 mW Kennwerte (TA = 25°C, l = 870 nm) Characteristics Bezeichnung VR = 5 V,Ee = 1 mW/cm2 S 60 (‡ 45) mA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity lS max 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % vonSmax Spectral range of sensitivity S = 10 % ofSmax l 740 ... 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.00 mm 2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L · B L · W 2.65· 2.65 mm · mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip surface to case surface Halbwinkel Half angle j– 60 Grad deg. Dunkelstrom,VR = 10 V Dark current IR 2 (£ 30) nA

Semiconductor Group 3 1998-03-17 Spektrale Fotoempfindlichkeit Spectral sensitivity Sl 0.63 A/W Quantenausbeute Quantum yield h 0.9 Electrons Photon Leerlaufspannung,Ee = 1 mW/cm2 Open-circuit voltage VO 350 (‡ 280) mV Kurzschlußstrom,Ee = 1 mW/cm2 Short-circuit current ISC 56 mA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50W; VR = 5 V;l = 850 nm;Ip = 800mA tr,tf 20 ns Durchlaßspannung,IF = 100 mA,E = 0 Forward voltage VF 1.3 V Kapazität,VR = 0 V,f= 1 MHz,E = 0 Capacitance C 0 72 pF Temperaturkoeffizient vonVO Temperature coefficient of VO TC V – 2.6 mV/K Temperaturkoeffizient vonISC Temperature coefficient ofISC TC I 0.03 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 4.0· 10– 14 W ÖHz Nachweisgrenze,VR = 10 V Detection limit D* 6.6 · 1012 cm ·ÖHz W Kennwerte (TA = 25°C, l = 870 nm) Characteristics (cont’d) Bezeichnung

Semiconductor Group 4 1998-03-17 Relative spectral sensitivity Srel= f (l) Dark current IR = f (VR ),E = 0 PhotocurrentIP = f (Ee),VR = 5 V Open-circuit voltageVO = f (Ee) Capacitance C = f (VR ),f = 1 MHz,E = 0 Total power dissipationPtot= f (TA) Dark current IR = f (TA),VR = 10 V,E = 0 l OHF01430 400 relS 0 600 800 1000 nm 1200 100 E OHF01097 e 010 PI 10 1 10 2 10 410 -1 10 0 10 1 10 2 410 310 210 110 10 0 VO m Am V IP VO 310 mW/cm 2 V OHF00081 R -210 C 0 -110 010 110 210V pF 100 T OHF00394 A totP 0 20 40 60 80 ˚C 100 mW 100 120 140 160 T OHF00082 A -110 0 RI 10 0 10 1 10 2 10 3 nA 20 40 60 80 ˚C 100 Directional characteristicsSrel= f (j) OHF01402 40 30 20 10 20 40 60 80 100 1200.40.60.81.0 j 0.2 0.4 0.6 0.8 1.0 100