SFH204 SIEMENS | Alldatasheet
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SIEMENS AKTIENGESELLSCHAF 47E D M@™@ 8235605 O0e27455 3 @BSIEG SILICON FOUR QUADRANT PHOTODIODE ns TAi-5i . Package Dimensions in Inches (mm) : . . : 2164) ‘Beate x, oo owe 1868) om ea, ee ® ie 03 (0.75) Ls see RES SEE, orcas) 25) re ® ae Sn 008 (0,2) 4 014 (0,351 i en gay ‘CONNECTOR SCHEME 216,08) —>| ae to oo oo = eee es eek Cele Sia ira Cn0oe System wrt Toe: ee es aA ee GRY SENSITIVE SURFACE tite Rae yo Beet: F 60. + 23 ro | >] fio FEATURES “ © Miniature Size MEASUREMENT 1M yn * Four Quadrant Active Sections Maximum Ratings * Close Spacing of Contacts, 12 nm Reverse Voliage (Vp) 12 * Can Determine If and By How Much a Operating and Storage Temperature Range (T . To) . ~40 to +80°C Light Source Has Deviated Soldering Temperature in a 2 mm Distance ec trom the Case Bottom (t < 3 8) (T 230' + SMD Package Optional Bal letra lanl jomw Characteristics (Tam» = 25°C) DESCRIPTION Photosensitwity (Va = 5V, Note 1) s 013 (2008) nal The SFH 204 silicon planar miniature four Se ea yet Pholosenetity” Ysa 880 nm quadrant photodiode has application in {G = 10% of Smax) » 400 1100 am edge drive, positioning, and path and Radhant Sensitwe Area A 4x 001 mm? i i Dimensions of the Radiant corner scanning control devices. The active Sensis Area Lew 400 x 100 mm units are spaced at only 12 um apart from Distance Between Chip Surface individual contacts, It is therefore possible and Package Surface H 05 mm nets, 1 Is theres St Half Angle ° 60 Deg to get exact positioning with high definition. Dark Current (Vp = 10 V) i 01(<2) nA Spectral Photosensitivly ‘0 = 850 nm) Ss 035 AW Max Deviation of Photosensttvty Between Diodes 4 £10 % Electrons Quantum Efficiency (h = 950 nm) 1 045 Photon —Continued 8-48
SIEMENS AKTIENGESELLSCHAF 47E D Ml 8235605 027456 5 MMSIEG T-41-51 Characteristics (Tamp = 25°C) Open Circuit Voltage (Ey = 1000 Ix, Note 1) Vo 450 (2380) mv Short Circuit Current (Ey = 1000 Ix, Note 1) lk 130 (280) nA met Rise and Fall Time of the Photo: SOS yore current from 10% to 90% and from 90% to 10% of the Final Value (Ry = 1 KQ, Va = 5 V, X= 830 nm p= 45 nA) wh 3 Hs Forward Voltage (le = 100 mA, E, = 0 Tam = 25°C) Ve 13 v Ci Wen OW. = 1 MHz, E, = 018) Co 20 oF es ‘ ° , saimsratu, Cooticrent Vo Te, -26 vik ‘Temperature Coetticient Ip TC, 018 oik ‘Capacitance Power Dissipation Relative spectral sensitivity or O71 Mad Pro = 1 (Emo) Sr =f (A) di % * . tim » >|. eI NT 4 roy Sey | TZN iii aay SU Pt ~y V1 i i oo TN Ao sof = 1 at 7 | TIN Ne se aneEah| | Ne x i : — 70 aan or “ATH eI EIT |) 1 EN wl Te wt ca ra wy oO ri) “0 60 od 00 600 800 1000 nm —* Va lat +A Spe cet votage y= 1) ier 3 See agi eee Seri no or 1, Ett th vy \\ | j . au (a Van fa \\ i J [| aT | ne OTR AA A ar a COT ae Tn we XK " a te eat an allie J x HS Ae i, rl A) aati se Ss oe wy . yor Sa aa eaal h ii tH AN w [> 5 < . « CET Xs mae HAT et WERE Lx Og 0 COAT ot i ROA SD eo HHT Tt» Ser 10° 10" 10? to* Wty photodiode — {plane receve:) 8-49