SFH203P SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Especially suitable for applications from 400 nm to 1100 nm (SFH 203 P) and of 880 nm (SFH 203 PFA)
  • Short switching time (typ. 5 ns)
  • 5 mm LED plastic package

Applications

  • Industrial electronics
  • For control and drive circuits
  • Photointerrupters
  • Fiber optic transmission systems Typ (*vorher) Type (*formerly) Bestellnummer Ordering Code SFH 203 P (*SFH 217) Q62702-P946 SFH 203 PFA (*SFH 217 F) Q62702-P947 SFH 203 P SFH 203 PFA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. feo06644feof6644 03.96

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 55 ... + 100°C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeitt≤ 3 s) Soldering temperature in 2 mm distance from case bottom ( t≤ 3 s) TS 300 °C Sperrspannung Reverse voltage VR 50 V Verlustleistung Total power dissipation Ptot 100 mW Kennwerte (TA = 25°C) Characteristics Bezeichnung VR = 5 V, Normlicht/standard light A, T = 2856 K VR = 5 V,λ = 950 nm,Ee = 1 mW/cm2 S S 9.5 (≥ 5) 6.2 (≥ 3.6) nA/Ix µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % vonSmax Spectral range of sensitivity S = 10 % ofSmax Bestrahlungsempfindliche Fläche Radiant sensitive area A 11 m m 2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L × B L × W 1 × 11 × 1m m × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface

ϕ± 75 ± 75 Grad deg. Dunkelstrom,VR = 20 V Dark current IR 1 (≤ 10) 1 ( ≤ 10) nA Spektrale Fotoempfindlichkeit,λ = 850 nm Spectral sensitivity Sλ 0.62 0.59 A/W Quantenausbeute,λ = 850 nm Quantum yield η 0.89 0.86 Electrons Photon Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2,λ = 950 nm VO VO 350 (≥ 300) 300 (≥ 250) mV mV Kurzschlußstrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2,λ = 950 nm ISC ISC 9.3 3.0 µA µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50Ω; VR = 20 V;λ = 850 nm;Ip = 800µA tr,tf 55 n s Durchlaßspannung,IF = 80 mA,E = 0 Forward voltage VF 1.3 1.3 V Kapazität,VR = 0 V,f = 1 MHz,E = 0 Capacitance C 0 11 11 pF Temperaturkoeffizient vonVO Temperature coefficient of VO TC V – 2.6 – 2.6 mV/K Temperaturkoeffizient vonISC Temperature coefficient ofISC Normlicht/standard light A λ = 950 nm TC I 0.18 0.2 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 20 V,λ = 850 nm NEP 2.9× 10– 14 2.9× 10– 14 W √Hz Nachweisgrenze,VR = 20 V,λ = 850 nm Detection limit D* 3.5 × 1012 3.5× 1012 cm ·√Hz W Kennwerte (TA = 25°C) Characteristics (cont’d) Bezeichnung

Relative spectral sensitivity SFH 203 P Srel= f (λ) PhotocurrentIP = f (Ee),VR = 5 V Open-circuit voltageVO = f (Ee) SFH 203 PFA Relative spectr. sensitivity SFH 203 PFA S rel= f (λ) PhotocurrentIP = f (Ev),VR = 5 V Open-circuit voltageVO = f (Ev) SFH 203 P Total power dissipation P tot= f (TA) Dark current IR =f (VR ),E = 0 Capacitance C = f (VR ),f = 1 MHz,E = 0 Directional characteristicsSrel= f (ϕ)